Properties of Interfacial Dislocations in Hydrophobic Bonded Si-Wafers

2019 ◽  
Vol 33 (4) ◽  
pp. 441-449
Author(s):  
Manfred Reiche ◽  
Martin Kittler ◽  
Angelika Haehnel ◽  
T. Arguirov ◽  
T. Mchedlidze
Keyword(s):  
Interfacial Dislocations

Coherency loss in γ' precipitates in nickel-base superalloy

1983 ◽  
Vol 41 ◽  
pp. 244-245
Author(s):  
R. A. Ricks ◽  
Angus J. Porter
Keyword(s):  
Lattice Mismatch ◽  
Lattice Parameter ◽  
Nickel Base Superalloy ◽  
Large Size ◽  
The Matrix ◽  
Nimonic 80A ◽  
Interfacial Dislocations ◽  
Nickel Base ◽  
Coherency Loss ◽  
Nimonic 115

During a recent investigation concerning the growth of γ' precipitates in nickel-base superalloys it was observed that the sign of the lattice mismatch between the coherent particles and the matrix (γ) was important in determining the ease with which matrix dislocations could be incorporated into the interface to relieve coherency strains. Thus alloys with a negative misfit (ie. the γ' lattice parameter was smaller than the matrix) could lose coherency easily and γ/γ' interfaces would exhibit regularly spaced networks of dislocations, as shown in figure 1 for the case of Nimonic 115 (misfit = -0.15%). In contrast, γ' particles in alloys with a positive misfit could grow to a large size and not show any such dislocation arrangements in the interface, thus indicating that coherency had not been lost. Figure 2 depicts a large γ' precipitate in Nimonic 80A (misfit = +0.32%) showing few interfacial dislocations.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Microstructure of SrTiO3 Thin Films as Single Layer and Incorporated in Yba2Cu3O7-x/SrTiO3 Multilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Interfacial Dislocations ◽  
The Individual ◽  
Film Substrate

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.

Some remarks on interfacial dislocations

1973 ◽  
Vol 3 (12) ◽  
pp. L249-L254 ◽  
Author(s):  
S Nakahara ◽  
J R Willis
Keyword(s):  
Interfacial Dislocations

Interactions between glide dislocations and parallel interfacial dislocations in nanoscale strained layers

2007 ◽  
Vol 102 (3) ◽  
pp. 034314 ◽  
Author(s):  
F. Akasheh ◽  
H. M. Zbib ◽  
J. P. Hirth ◽  
R. G. Hoagland ◽  
A. Misra
Keyword(s):  
Strained Layers ◽  
Interfacial Dislocations

Microstructure of Interfacial Basal Plane Dislocations in 4H-SiC Epilayers

2019 ◽  
Vol 954 ◽  
pp. 77-81
Author(s):  
Zhe Li ◽  
Xuan Zhang ◽  
Ze Hong Zhang ◽  
Li Guo Zhang ◽  
Tao Ju ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Basal Plane ◽  
Power Devices ◽  
Etch Pits ◽  
Transmission Electron ◽  
Interfacial Dislocations ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis ◽  
Special Category

As SiC power devices are being developed toward ultrahigh-voltage bipolar structures, the density of basal plane dislocations in SiC epilayers has to be minimized. In this work, a special category of basal plane dislocations, i.e. interfacial dislocations, was investigated. Their etch pits were detected at the interface and the microstructure was revealed by cross-section transmission electron microscope analysis.

Dislocations in Ceramics

1998 ◽  
Vol 4 (S2) ◽  
pp. 550-551
Author(s):  
C. Barry Carter
Keyword(s):  
Point Defects ◽  
Ceramic Materials ◽  
List Type ◽  
Complex Structures ◽  
Oxide Heterostructures ◽  
Perfect Lattice ◽  
Binary Oxides ◽  
Unit Cells ◽  
Interfacial Dislocations ◽  
Insight Into

Of the four groups of crystal lattice defects, i.e., point defects, dislocations, interfaces and particles, dislocations are often thought to be the least important for ceramic materials. However, they not only give considerable insight into interfaces (they can be thought of as the link between point defects and interfaces), but they are becoming more important as interest grows in epitactic oxide heterostructures.The present paper provides a review of our current understanding of dislocations in ceramics. To simplify the discussion, we can separate the task into the following sections, namely Simple oxides (MgO, ZnO etc.)Simple non-oxides (A1N, GaN, SiC, TiC, etc.)More complex binary oxides (AI2O3, Fe203, etc.)Multicomponent oxides and complex non-oxides (spinels, garnets, S13N4)Interfacial dislocations (misfit, grain boundary, etc.)The features which are most often associated with ceramic materials are their complex structures and large unit cells. For example in bcc garnets, the smallest Burgers vector for a perfect lattice dislocation is ∼0.8nm long.

HRTEM observation of interfacial dislocations at faceted Al–Pb interfaces

2004 ◽  
Vol 84 (11) ◽  
pp. 673-683 ◽  
Author(s):  
Harald Rösner * ◽  
Jörg Weissmüller ◽  
Gerhard Wilde
Keyword(s):  
Hrtem Observation ◽  
Interfacial Dislocations

Formation and Structure of Epitaxial NiSi2 and CoSi2

1981 ◽  
Vol 10 ◽  
Author(s):  
L. J. Chen ◽  
J. W. Mayer ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Dark Field ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Interfacial Dislocations ◽  
Cobalt Thin Films ◽  
Predicted Values ◽  
Field Imaging

Transmission electron microscopy has been applied to study the formation and structure of epitaxial NiSi2 and CoSi2 thin films on silicon. Bright field and dark field imaging reveal the interface planes of faceted silicides through the strain contrast, analogous to the contrast of the precipitate-matrix interface of coherent or semicoherent precipitates. Superlattice dark field imaging depicts the distribution of twin-related and epitaxial silicides in these systems. { 111 } interfaces were found to be more prominent than {001} interfaces. Twin-related silicides were observed to cover more area on the substrate silicon than epitaxial silicides did.In situ annealing of nickel and cobalt thin films on silicon provides a unique means of investigation of the transformation from polycrystalline to epitaxial silicides. The NiSi2 transformation was found to be very rapid at 820°C, whereas the CoSi2 transformation appeared to be very sluggish. Furnace annealing confirmed that only a small fraction of CoSi2 transforms to epitaxial CoSi2 after annealing at 850°C for 4h.Diffraction contrast analysis has been applied to interfacial dislocations of epitaxial NiSi2/Si and CoSi2/Si systems. The dislocations were found to be of edge type with ⅙<112> and ½<110> Burgers' vectors. The average spacings are close to their respective theoretically predicted values.

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