scholarly journals Advanced TCAD Simulation and Calibration of Gallium Oxide Vertical Transistor

2020 ◽  
Vol 9 (3) ◽  
pp. 035003 ◽  
Author(s):  
Hiu Yung Wong ◽  
Armand C. Fossito Tenkeu
Keyword(s):  
Gallium Oxide ◽  
Vertical Transistor ◽  
Tcad Simulation

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

A New Approach for SRAM Soft Defect Root Cause Identification

2007 ◽  
Author(s):  
Peter Egger ◽  
Stefan Müller ◽  
Martin Stiftinger
Keyword(s):  
Integrated Circuits ◽  
Top Down ◽  
Feature Size ◽  
Design Rules ◽  
New Approach ◽  
Root Cause ◽  
Wafer Fab ◽  
Sram Cell ◽  
Tcad Simulation ◽  
Root Cause Identification

Abstract With shrinking feature size of integrated circuits traditional FA techniques like SEM inspection of top down delayered devices or cross sectioning often cannot determine the physical root cause. Inside SRAM blocks the aggressive design rules of transistor parameters can cause a local mismatch and therefore a soft fail of a single SRAM cell. This paper will present a new approach to identify a physical root cause with the help of nano probing and TCAD simulation to allow the wafer fab to implement countermeasures.

scholarly journals Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

2019 ◽  
Vol 1410 ◽  
pp. 012233 ◽  
Author(s):  
R V Tominov ◽  
N A Polupanov ◽  
V I Avilov ◽  
M S Solodovnik ◽  
N V Parshina ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Resistive Switching ◽  
Gallium Oxide ◽  
Oxide Nanostructures ◽  
Local Anodic Oxidation

A Novel High-Stress Pre-Metal Dielectric Film to Improve Device Performance for sub-65nm CMOS Manufacturing

2006 ◽  
Vol 913 ◽  
Author(s):  
Young Way Teh ◽  
John Sudijono ◽  
Alok Jain ◽  
Shankar Venkataraman ◽  
Sunder Thirupapuliyur ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Dielectric Film ◽  
High Stress ◽  
Significant Degree ◽  
Strain Effect ◽  
Device Performance ◽  
Hot Carrier ◽  
Tcad Simulation ◽  
Improve Device ◽  
Deposition Techniques

AbstractThis work focuses on the development and physical characteristics of a novel dielectric film for a pre-metal dielectric (PMD) application which induces a significant degree of tensile stress in the channel of a sub-65nm node CMOS structure. The film can be deposited at low temperatures to meet the requirements of NiSi integration while maintaining void-free gap fill and superior film quality such as moisture content and uniformity. A manufacturable and highly reliable oxide film has been demonstrated through both TCAD simulation and real device data, showing ~6% NMOS Ion-Ioff improvement; no Ion-Ioff improvement or degradation on PMOS. A new concept has been proposed to explain the PMD strain effect on device performance improvement. Improvement in Hot Carrier immunity is observed compared to similar existing technologies using high density plasma (HDP) deposition techniques.

scholarly journals Thermal management strategies for gallium oxide vertical trench-fin MOSFETs

2021 ◽  
Vol 129 (8) ◽  
pp. 085301
Author(s):  
Robert H. Montgomery ◽  
Yuewei Zhang ◽  
Chao Yuan ◽  
Samuel Kim ◽  
Jingjing Shi ◽  
...  
Keyword(s):  
Thermal Management ◽  
Gallium Oxide ◽  
Management Strategies

Influence of diamond wire saw slicing parameters on (010) lattice plane beta-gallium oxide single crystal wafer

2021 ◽  
Vol 133 ◽  
pp. 105939
Author(s):  
Pengcheng Gao ◽  
Baimei Tan ◽  
Fan Yang ◽  
Hui Li ◽  
Na Bian ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Lattice Plane ◽  
Diamond Wire ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Crystal Wafer

Radiation Hardness Study of L G = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation

2021 ◽  
Vol 68 (5) ◽  
pp. 2289-2294
Author(s):  
Adam Elwailly ◽  
Johan Saltin ◽  
Matthew J. Gadlage ◽  
Hiu Yung Wong
Keyword(s):  
Radiation Hardness ◽  
Tcad Simulation ◽  
20 Nm
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