(Invited) High-Performance Si Optical Modulator and Ge Photodetector and Their Application to Silicon Photonics Integrated Circuit

2018 ◽  
Vol 86 (7) ◽  
pp. 17-25 ◽  
Author(s):  
Junichi Fujikata ◽  
Shigeki Takahashi ◽  
Tohru Mogami ◽  
Kazuhiko Kurata ◽  
Mitsuru Takenaka ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Milan M. Milošević ◽  
Weining Man ◽  
Geev Nahal ◽  
Paul J. Steinhardt ◽  
Salvatore Torquato ◽  
...  

AbstractWe introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.


1991 ◽  
Vol 02 (03) ◽  
pp. 147-162 ◽  
Author(s):  
ROBERT G. SWARTZ

Compound semiconductor technology is rapidly entering the mainstream, and is quickly finding its way into consumer applications where high performance is paramount. But silicon integrated circuit technology is evolving up the performance curve, and CMOS in particular is consuming ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of megahertz to multi-gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This paper reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits and market trends for these competing, yet often complementary IC technologies.


Author(s):  
Yutaka Makihara ◽  
Moataz Eissa ◽  
Tomohiro AMEMIYA ◽  
Nobuhiko Nishiyama

Abstract To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.


2021 ◽  
Author(s):  
Shi-Chao Zhu ◽  
Sheng Yu ◽  
Xun Lei ◽  
Luluzi Lu ◽  
Quan Cao

Sign in / Sign up

Export Citation Format

Share Document