On the roughness analysis of high-index silicon wafers using KOH-IPA solutions

2020 ◽  
Author(s):  
Hiram Enrique Martínez Mateo ◽  
Francisco Javier de la Hidalga Wade ◽  
Carlos Zúñiga Islas ◽  
Mario Moreno Moreno ◽  
Joel Molina Reyes ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Etching Rate ◽  
Device Fabrication ◽  
High Index ◽  
Structure Evolution ◽  
Silicon Substrates ◽  
Anisotropic Solution ◽  
Surface Nanostructures ◽  
Roughness Analysis ◽  
Reported Data

Bulk Micromachining on some stable high-index silicon substrates are ever more interesting because they are opening new possibilities for the development of novel 3D microstructures and surface nanostructures useful for diverse quantum applications. Considering crystallography-oriented etching, several mechanisms are poorly understood and hence, some experimental work leading to 3D device fabrication, are being developed and reported without analyzing the morphology evolution. For bulk micromachining, when 3D etching is developed using some anisotropic solution, the structure evolution takes place under a competition of fast-etching planes and unstable facets against slow-etching planes; according to the etchant composition, the resulting surface roughness can be considered as one of the main issues to be addressed. Wet chemical etching on (1 1 4}, (1 1 3), and (5 5 12) silicon substrates at 60°C, using aqueous KOH and KOH+IPA solutions, is realized in this work. The absolute etching rate trends and surface roughness were compared to reported data obtained from (0 0 1) silicon substrates. The overall etching mechanism is analyzed following some crystallographic rules and compared with high-index surfaces obtained from (0 0 1) silicon substrates. According to the best etching conditions achieved on this study, some novel 3D microstructures are presented.

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Roughness measurements of nonlinear optical polymer films by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 22-23
Author(s):  
I. H. Musselman ◽  
R.-T. Chen ◽  
P. E. Russell
Keyword(s):  
Surface Roughness ◽  
Scanning Tunneling Microscopy ◽  
Nonlinear Optical ◽  
Polymer Surface ◽  
Light Extinction ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscopy ◽  
Optical Polymer ◽  
Total Light

Scanning tunneling microscopy (STM) has been used to characterize the surface roughness of nonlinear optical (NLO) polymers. A review of STM of polymer surfaces is included in this volume. The NLO polymers are instrumental in the development of electrooptical waveguide devices, the most fundamental of which is the modulator. The most common modulator design is the Mach Zehnder interferometer, in which the input light is split into two legs and then recombined into a common output within the two dimensional waveguide. A π phase retardation, resulting in total light extinction at the output of the interferometer, can be achieved by changing the refractive index of one leg with respect to the other using the electrooptic effect. For best device performance, it is essential that the NLO polymer exhibit minimal surface roughness in order to reduce light scattering. Scanning tunneling microscopy, with its high lateral and vertical resolution, is capable of quantifying the NLO polymer surface roughness induced by processing. Results are presented below in which STM was used to measure the surface roughness of films produced by spin-coating NLO-active polymers onto silicon substrates.

scholarly journals Synthesis of Printable Polyvinyl Alcohol for Aerosol Jet and Inkjet Printing Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 220
Author(s):  
Mahmuda Akter Monne ◽  
Chandan Qumar Howlader ◽  
Bhagyashree Mishra ◽  
Maggie Yihong Chen
Keyword(s):  
Polyvinyl Alcohol ◽  
Inkjet Printing ◽  
Micro Electro Mechanical System ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Excellent Candidate ◽  
Jet Printing ◽  
Inkjet Printing Technology ◽  
Transistor Fabrication ◽  
Aerosol Jet Printing

Polyvinyl Alcohol (PVA) is a promising polymer due to its high solubility with water, availability in low molecular weight, having short polymer chain, and cost-effectiveness in processing. Printed technology is gaining popularity to utilize processible solution materials at low/room temperature. This work demonstrates the synthesis of PVA solution for 2.5% w/w, 4.5% w/w, 6.5% w/w, 8.5% w/w and 10.5% w/w aqueous solution was formulated. Then the properties of the ink, such as viscosity, contact angle, surface tension, and printability by inkjet and aerosol jet printing, were investigated. The wettability of the ink was investigated on flexible (Kapton) and non-flexible (Silicon) substrates. Both were identified as suitable substrates for all concentrations of PVA. Additionally, we have shown aerosol jet printing (AJP) and inkjet printing (IJP) can produce multi-layer PVA structures. Finally, we have demonstrated the use of PVA as sacrificial material for micro-electro-mechanical-system (MEMS) device fabrication. The dielectric constant of printed PVA is 168 at 100 kHz, which shows an excellent candidate material for printed or traditional transistor fabrication.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Surface properties of composite resins with and without fluorides for bracket bonding / Propriedades de superfície de resinas compostas com e sem fluoretos para colagem de suportes

2021 ◽  
Vol 7 (7) ◽  
pp. 67267-67276
Author(s):  
Emillyn Jones Greijal Dias Holanda ◽  
José Guilherme Neves ◽  
Milton Santamaria-Jr ◽  
Silvia Amélia Scudeler Vedovello ◽  
Ana Rosa Costa ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Properties ◽  
Color Change ◽  
Composite Resins ◽  
Hardness Tester ◽  
Significant Difference ◽  
Post Test ◽  
Roughness Analysis ◽  
Diamond Paste ◽  
Penetration Time

The aim of this study was to evaluate the surface properties of orthodontic resins with and without fluoride. Forty disks, measuring 2 mm thick by 6 mm in diameter, were made of 4 bracket-bonding composite resins (n=10): Transbond Plus Color Change-3M/Unitek (TPCC); Transbond XT- 3M/Unitek (TXT), Orthocem -FGM (OC); Orthocem UV Trace-FGM (OCUV). The discs were photoactivated for 40 seconds with irradiance of 450 mW/cm2 and manually polished in sequence by silicon carbide sandpapers with 1200 and 2000 grain size and finished with diamond paste and felt disc. The surface microhardness analysis was performed using a Shimadzu Micro Hardness Tester HMV-2,000 (Shimadzu Corporation, Kyoto, Japan) with a load of 50 gF and a 5 second penetration time. Surface roughness readings were taken using a Surf Corder Roughness Meter (SE 1700- Kosaka, Lisboa-Portugal). For data analysis, ANOVA (one-way) was used, followed by Tukey's post-test (?=0.05). The microhardness results showed a difference (p?0.05) in the means of the orthodontic resins between TPCC and TXT with the other groups. After the surface roughness analysis, the averages showed that TPCC resin showed higher roughness compared to OC and OCUV (p?0.05), and there was no statistical difference with TXT. It was concluded that statistically the composite resins with fluoride showed significant difference regarding hardness and roughness.

Effect of Surface Chemistry on Ruthenium Wet Etching

2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Wet Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Metal Free ◽  
Atomic Force ◽  
Different Types ◽  
Effect Of Surface

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.

scholarly journals Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3179
Author(s):  
Qi Wang ◽  
Kehong Zhou ◽  
Shuai Zhao ◽  
Wen Yang ◽  
Hongsheng Zhang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Low Cost ◽  
Etching Rate ◽  
Surface Damage ◽  
Device Fabrication ◽  
Irreversible Damage ◽  
Catalytic Role ◽  
Metal Assisted Chemical Etching ◽  
Gan Etching

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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