scholarly journals A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller

1998 ◽  
Vol 20 (3) ◽  
pp. 165-167 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Quantitative Analysis ◽  
Current Density ◽  
Low Voltage ◽  
Tunneling Current ◽  
Approximate Expression ◽  
Oxide Thickness ◽  
Charge Carriers

The tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the oxide thickness and an approximate expression for the velocity of charge carriers is derived.

scholarly journals Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers

1998 ◽  
Vol 21 (1) ◽  
pp. 57-60 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Electric Field ◽  
Oxide Layer ◽  
Power Density ◽  
Field Effect ◽  
Low Voltage ◽  
Tunneling Current ◽  
Oxide Thickness ◽  
High Electric Field ◽  
Floating Gate ◽  
Field Effect Devices

The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related to oxide thickness are discussed.

Modeling and Simulation of Tunneling Current Density for Ultra Thin MOS Devices

2016 ◽  
Vol 860 ◽  
pp. 30-34 ◽  
Author(s):  
Niladri Pratap Maity ◽  
Reshmi Maity ◽  
R.K. Thapa ◽  
S. Baishya
Keyword(s):  
Current Density ◽  
Current Flow ◽  
Tunneling Current ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Tunneling Model ◽  
Mos Devices ◽  
Theoretical Predictions ◽  
Numerical Device ◽  
Mos Gate

In this paper, an analytical model for evaluation of tunneling current density of ultra-thin Metal Oxide Semiconductor (MOS) devices is presented. Results have been obtained for a wide variation of oxide thickness and biasing condition having doping concentration of 1 x 1017 cm-3. The investigation for the tunneling current density is limited to low temperatures, so that any thermal involvement to current flow can be neglected. The self-consistent oxide tunneling model has been used for device simulation, which is simple to implement and assist in the study of deep sub-micron MOS gate current effects, therefore correctly calculate the terminal current. Tunnel resistivity is also evaluated utilizing this tunneling current density model. Theoretical predictions are compared with the results obtained by the 2-D numerical device simulator ATLAS, good agreements between the two are observed.

Low-voltage EDS of magnesium ferrite Dendrites in a FEG-SEM

1996 ◽  
Vol 54 ◽  
pp. 478-479
Author(s):  
Matthew T. Johnson ◽  
Ian M. Anderson ◽  
Jim Bentley ◽  
C. Barry Carter
Keyword(s):  
Monte Carlo ◽  
Quantitative Analysis ◽  
Monte Carlo Simulations ◽  
Cross Section ◽  
Spatial Resolution ◽  
Low Voltage ◽  
Magnesium Ferrite ◽  
X Ray ◽  
Interaction Volume ◽  
Ferrite Spinel

Energy-dispersive X-ray spectrometry (EDS) performed at low (≤ 5 kV) accelerating voltages in the SEM has the potential for providing quantitative microanalytical information with a spatial resolution of ∼100 nm. In the present work, EDS analyses were performed on magnesium ferrite spinel [(MgxFe1−x)Fe2O4] dendrites embedded in a MgO matrix, as shown in Fig. 1. spatial resolution of X-ray microanalysis at conventional accelerating voltages is insufficient for the quantitative analysis of these dendrites, which have widths of the order of a few hundred nanometers, without deconvolution of contributions from the MgO matrix. However, Monte Carlo simulations indicate that the interaction volume for MgFe2O4 is ∼150 nm at 3 kV accelerating voltage and therefore sufficient to analyze the dendrites without matrix contributions.Single-crystal {001}-oriented MgO was reacted with hematite (Fe2O3) powder for 6 h at 1450°C in air and furnace cooled. The specimen was then cleaved to expose a clean cross-section suitable for microanalysis.

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

scholarly journals Microstructure and Electrical Properties of Low-Voltage Barium Titanate Doped Zinc Oxide Varistor Ceramics

2019 ◽  
Vol 8 (4) ◽  
pp. 2713-2718
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Barium Titanate ◽  
Grain Boundary ◽  
Barrier Height ◽  
Current Density ◽  
Low Voltage ◽  
X Ray ◽  
Highly Nonlinear ◽  
Zno Varistors

In the present, varistor ceramics through the combination of zinc oxide (ZnO) with a perovskite material have become widespread because of their unique properties for a wide range of applications in electronic protection devices. Low-voltage zinc oxide (ZnO) varistors with fast response and highly nonlinear electrical properties for overvoltage protection in an integrated circuit are increasingly significant in the application of low-voltage electronics. The present study highlights the interaction between barium titanate (BaTiO3 ) and ZnO varistors through the employment of solid-state reaction method in the production of low-voltage varistors. The effects of BaTiO3 on the microstructure of ZnO varistors were analyzed through scanning electron microscopy (SEM), energy dispersive X-ray analysis spectroscopy (EDS) and X-ray diffraction (XRD). The EDS analysis and XRD measurements suggest the presence of ZnO and BaTiO3 phases. The electrical properties of BaTiO3 -doped ZnO varistors were examined based on the current density-electric field (J-E) characteristics measurement. The varistor properties showed the nonlinear coefficient (α) from 1.8 to 4.8 with the barrier height (φB) ranged from 0.70 to 0.88 eV. The used of BaTiO3 additive in ZnO varistors produced varistor voltages of 4.7 to 14.1 V/mm with the voltage per grain boundary (Vgb) was measured in the ranges 0.03 to 0.05 V. The lowest leakage current density was 348 µA/cm2 , obtained at the samples containing 12 wt.% BaTiO3 with high barrier height. The reduction in barrier height with increasing BaTiO3 content was associated with the excessive amount of BaTiO3 phase, hence cause the deterioration of active grain boundary due to the variation of oxygen (O) vacancies in the grain boundary.

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

2018 ◽  
Vol 112 (3) ◽  
pp. 033508 ◽  
Author(s):  
Tyler A. Growden ◽  
Weidong Zhang ◽  
Elliott R. Brown ◽  
David F. Storm ◽  
Katurah Hansen ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Far-Field Plume Characterization of a 100-W Class Hall Thruster

Aerospace ◽  
2020 ◽  
Vol 7 (5) ◽  
pp. 58
Author(s):  
Thibault Hallouin ◽  
Stéphane Mazouffre
Keyword(s):  
Energy Distribution ◽  
Current Density ◽  
Low Voltage ◽  
Ion Current ◽  
Hall Thruster ◽  
Far Field ◽  
Ion Energy ◽  
Ion Energy Distribution ◽  
The Core ◽  
Ion Current Density

The 100 W-class ISCT100-v2 Hall Thruster (HT) has been characterized in terms of far-field plume properties. By means of a Faraday Cup and a Retarding Potential Analyzer, both the ion current density and the ion energy distribution function have been measured over a 180 ∘ circular arc for different operating points. Measurements are compared to far-field plume characterizations performed with higher power Hall thrusters. The ion current density profiles remain unchanged whatever the HT input power, although an asymptotic limit is observed in the core of the plume at high discharge voltages and anode mass flow rates. In like manner, the ion energy distribution functions reveal that most of the beam energy is concentrated in the core of the plume [ − 40 ∘ ; 40 ∘ ] . Moreover, the fraction of low energy ion populations increases at large angles, owing to charge exchange and elastic collisions. Distinct plume regions are identified; they remain similar to the one described for high-power HTs. An efficiency analysis is also performed in terms of current utilization, mass utilization, and voltage utilization. The anode efficiency appears to be essentially affected by a low voltage utilization, the latter originating from the large surface-to-volume ratio inherent to low-power HTs. Experimental results also show that the background pressure clearly affects the plume structure and content.

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