scholarly journals Near Infrared Lateral Photovoltaic Effect in LaTiO3Films

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Wujun Jin ◽  
Shasha Zhang ◽  
Hao Ni ◽  
Wenfeng Xiang ◽  
Jianfeng Xi ◽  
...  
Keyword(s):  
Laser Beam ◽  
Near Infrared ◽  
Photovoltaic Effect ◽  
Open Circuit ◽  
Bias Current ◽  
Sensitive Detection ◽  
Photoelectronic Device ◽  
Position Sensitive ◽  
Open Circuit Photovoltage

We have reported on the lateral photovoltaic effect of LaTiO3films epitaxially grown on (100) SrTiO3substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3film through SrTiO3substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.

scholarly journals High-Temperature Photovoltaic Effect in Heterojunction

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Hao Ni ◽  
Kun Zhao ◽  
Xiaojin Liu ◽  
Wenfeng Xiang ◽  
Songqing Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Oxide Heterostructures ◽  
Microelectronic Devices ◽  
Current Voltage ◽  
Higher Temperature ◽  
Open Circuit Photovoltage

We fabricated a heterojunction of /n-Si and investigated its electronic transport and ultraviolet photovoltaic properties at higher temperature up to 673 K. The rectifying behaviors vanished with the energy-band structure evolvement from 300 to 673 K. Under irradiation of a 248 nm pulse laser, the peak values of open-circuit photovoltage and short-circuit photocurrent decreased drastically. This understanding of the temperature-related current-voltage behavior and ultraviolet photodetection of oxide heterostructures should open a route for devising future microelectronic devices working at high temperature. PACS: 73.40.Lq, 71.27.+ a, 73.50.Pz.

Near-infrared sensitization solar cell with the electrode of aluminium phthalocyanine adsorbed on nanocrystalline titanium dioxide film

2002 ◽  
Vol 06 (03) ◽  
pp. 211-216 ◽  
Author(s):  
Tasuku Komori ◽  
Yutaka Amao
Keyword(s):  
Solar Cell ◽  
Near Infrared ◽  
Short Circuit ◽  
Open Circuit ◽  
Film Electrode ◽  
Dye Sensitized ◽  
Nanocrystalline Titanium ◽  
Open Circuit Photovoltage ◽  
Dioxide Film ◽  
Aluminium Phthalocyanine

The dye-sensitized solar cell using visible and near-infrared sensitization of nanocrystalline TiO 2 films by aluminium phthalocyanine, aluminium 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine hydroxide (AlTPPc), was developed and its photoelectrochemical properties were investigated. The short-circuit photocurrent (ISC) was 0.026 mA cm-2, the open-circuit photovoltage ( V OC) was 186 mV, and the fill factor (FF) of solar cell using AlTPPc adsorbed on nanocrystalline TiO 2 film electrode was estimated to be 40.4%, respectively. By using AlTPPc adsorbed on nanocrystalline TiO 2 film electrode, photovoltage and photocurrent were higher compared with that of only nanocrystalline TiO 2 film electrode and were maintained under near-infrared irradiation. Thus, the solar cell using the near-infrared sensitization by AlTPPc adsorbed on nanocrystalline TiO 2 film electrode was developed.

A Study of the Photovoltaic effect of A Semiconductor Grain Boundary by A Scanning Laser Beam

1985 ◽  
Vol 54 ◽  
Author(s):  
Jerng-Sik Song ◽  
Edward S. Yang
Keyword(s):  
Grain Boundary ◽  
Laser Beam ◽  
Open Circuit Voltage ◽  
Photovoltaic Effect ◽  
Thermionic Emission ◽  
Open Circuit ◽  
Scanning Laser ◽  
Trap Energy ◽  
Recombination Velocity ◽  
Recombination Current

ABSTRACTExperimental observation of the photovoltaic effect of a semiconductor grain boundary with a scanning laser beam is analyzed assuming a single trap energy level. The photo-current is calculated from the recombination velocity and the concentration of minority carriers at a grain boundary which was derived from the continuity equation. Open circuit voltage across a sample is obtained from equating this recombination current to compensating thermionic emission current. Using recombination velocity and diffusion length as variables, tha calculated open circuit voltage is compared with experimental data.

Near-infrared-ray computed tomography with an 808 nm laser beam and high spatial resolutions

2021 ◽  
Vol 92 (1) ◽  
pp. 013702
Author(s):  
Eiichi Sato ◽  
Yasuyuki Oda ◽  
Sohei Yoshida ◽  
Kunihiro Yoshioka ◽  
Hodaka Moriyama ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Laser Beam ◽  
Near Infrared ◽  
Near Infrared Ray

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

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