scholarly journals Oxidation and Corrosion Behavior of Nanolaminated MAX-Phase Ti2AlC Film Synthesized by High-Power Impulse Magnetron Sputtering and Annealing

2015 ◽  
Vol 2015 ◽  
pp. 1-12 ◽  
Author(s):  
Jianjian Fu ◽  
Teng Fei Zhang ◽  
Qixun Xia ◽  
Sung-Hwan Lim ◽  
Zhixin Wan ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Corrosion Behavior ◽  
High Power ◽  
Room Temperature ◽  
Amorphous Matrix ◽  
Annealing Process ◽  
Max Phase ◽  
Rapid Formation ◽  
Oxidation And Corrosion ◽  
Anticorrosion Properties

Nanolaminated MAX-phase Ti2AlC thin films were synthesized by high-power impulse magnetron sputtering (HiPIMS) from a MAX-phase Ti2AlC target. The amorphous matrix Ti-Al-C films were deposited at room temperature, while the MAX-phase Ti2AlC films were obtained through annealing process of the as-deposited amorphous matrix films. The microstructure, oxidation resistance, and corrosion behavior of these two films were comparatively investigated. The results indicated that the MAX-phase Ti2AlC films had superior antioxidation and anticorrosion properties than the amorphous matrix Ti-Al-C films, which is attributed to the rapid formation of dense Al2O3layer on the top of MAX-phase Ti2AlC films because of the rapid diffusion of Al atoms in the typical nanolaminated structure of MAX phase.

Growth of TiO2 thin films on Si(001) and SiO2 by reactive high power impulse magnetron sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
F. Magnus ◽  
B. Agnarsson ◽  
A. S. Ingason ◽  
K. Leosson ◽  
S. Olafsson ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
High Power ◽  
Amorphous Matrix ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Temperature Range ◽  
Order Of Magnitude

ABSTRACTThin TiO2 films were grown on Si(001) and SiO2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Both dcMS and HiPIMS produce polycrystalline rutile TiO2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700 °C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300–500 °C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

scholarly journals Improvement in the Figure of Merit of ITO-Metal-ITO Sandwiched Films on Poly Substrate by High-Power Impulse Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 144
Author(s):  
Hui Li ◽  
Ying-Jie Gao ◽  
Shuo-Huang Yuan ◽  
Dong-Sing Wuu ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Optical Transmittance ◽  
Polyethylene Naphthalate ◽  
Conductive Films ◽  
Good Crystallinity ◽  
20 Nm ◽  
Cu Interlayer

High-power impulse magnetron sputtering (HiPIMS) was used to deposit ITO/Ag/ITO (IAgI) and ITO/Cu/ITO (ICuI) sandwiched films on polyethylene naphthalate substrate at room temperature as flexible transparent conductive materials. The hybrid layers were constructed with 40 nm ITO bottom and top layers, and a 5–20 nm Ag or Cu interlayer. The microstructure and optoelectrical properties were estimated for these films with various thicknesses of the metal interlayer. Thanks to the high-power density and highly ionized plasma in the HiPIMS process, the IAgI and ICuI sandwich structures exhibited good crystallinity and smooth surfaces with high optical transmittance and low sheet resistance. The optimal figure of merit was obtained as 101.16 × 10−3·Ω−1 for the IAgI film and 4.83 × 10−3·Ω−1 for the ICuI film with the metal interlayer thickness of 10 nm, both of which are higher than that from a similar structure reported via sputtering at room temperature. These results indicate that HiPIMS is a promising technique to deposit transparent conductive films onto soft substrates for applications in flexible optoelectronic devices.

scholarly journals Room temperature deposition of homogeneous, highly transparent and conductive Al-doped ZnO films by reactive high power impulse magnetron sputtering

2016 ◽  
Vol 157 ◽  
pp. 742-749 ◽  
Author(s):  
Martin Mickan ◽  
Ulf Helmersson ◽  
Hervé Rinnert ◽  
Jaafar Ghanbaja ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Room Temperature ◽  
Zno Films ◽  
Temperature Deposition ◽  
Doped Zno

Modeling the high power impulse magnetron sputtering discharge

2020 ◽  
pp. 159-221 ◽  
Author(s):  
Tiberiu Minea ◽  
Tomáš Kozák ◽  
Claudiu Costin ◽  
Jon Tomas Gudmundsson ◽  
Daniel Lundin
Keyword(s):  
Magnetron Sputtering ◽  
High Power

The Structure and Magnetic Properties of NiZn-Ferrite Films Deposited by Magnetron Sputtering at Room Temperature

2013 ◽  
Vol 690-693 ◽  
pp. 1702-1706 ◽  
Author(s):  
Shuang Jun Nie ◽  
Hao Geng ◽  
Jun Bao Wang ◽  
Lai Sen Wang ◽  
Zhen Wei Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Room Temperature ◽  
Oxygen Flow ◽  
Flow Ratio ◽  
Study Results ◽  
Ferrite Thin Films ◽  
Ferrite Films

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

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