scholarly journals Low-Temperature Production of Genuinely Amorphous Carbon from Highly Reactive Nanoacetylide Precursors

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Ken Judai ◽  
Naoyuki Iguchi ◽  
Yoshikiyo Hatakeyama
Keyword(s):  
High Temperature ◽  
Amorphous Carbon ◽  
Annealing Temperature ◽  
Carbon Materials ◽  
Thermal Conductance ◽  
Chain Reactions ◽  
Copper Acetylide ◽  
Lower Annealing Temperature ◽  
Partial Crystallization ◽  
New Carbon Materials

Copper acetylide is a well-known explosive compound. However, when the size of it crystals is reduced to the nanoscale, its explosive nature is lost, owing to a much lower thermal conductance that inhibits explosive chain reactions. This less explosive character can be exploited for the production of new carbon materials. Generally, amorphous carbon is prepared by carbonization of organic compounds exposed to high temperature, which can induce partial crystallization in graphite. In this work, we present a new method in which the carbonization reaction can proceed at a lower annealing temperature (under 150°C) owing to the highly reactive nature of copper acetylide, thus avoiding crystallization processes and enabling the production of genuinely amorphous carbon materials.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

scholarly journals Transparent TiO2/Cu/TiO2 Multilayer for Electrothermal Application

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1024
Author(s):  
Jingjing Peng ◽  
Changshan Hao ◽  
Hongyan Liu ◽  
Yue Yan
Keyword(s):  
Optical Properties ◽  
Heating Rate ◽  
Figure Of Merit ◽  
Annealing Temperature ◽  
Critical Thickness ◽  
Experimental Results ◽  
Tio2 Layer ◽  
Electrical And Optical Properties ◽  
Partial Crystallization

Highly transparent indium-free multilayers of TiO2/Cu/TiO2 were obtained by means of annealing. The effects of Cu thickness and annealing temperature on the electrical and optical properties were investigated. The critical thickness of Cu mid-layer with optimal electrical and optical properties was 10 nm, with the figure of merit reaching as high as 5 × 10−3 Ω−1. Partial crystallization of the TiO2 layer enhanced the electrical and optical properties upon annealing. Electrothermal experiments showed that temperatures of more than 100 °C can be reached at a heating rate of 2 °C/s without any damage to the multilayers. The experimental results indicate that reliable transparent TiO2/Cu/TiO2 multilayers can be used for electrothermal application.

Influence of Mg on Resistivity, Adhesion, Agglomeration of Ag(Mg)/SiO2/Si Multilayers

2001 ◽  
Vol 686 ◽  
Author(s):  
Bongjoo Kang ◽  
Heejung Yang ◽  
Sungjin Hong ◽  
Yeonkyu Ko ◽  
Chang-Oh Jeong ◽  
...  
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Enhanced Resistance ◽  
Free Silicon ◽  
Mg Content ◽  
Mgo Layers

AbstractThe effect of Mg in Ag(Mg)/SiO2/Si multilayers on adhesion, agglomeration, and resistivity after annealing in vacuum at 200 to 500 have been investigated. The annealing of Ag(Mg)/SiO2/Si multilayers produced surface and interfacial MgO layers, resulting in MgO/Ag(Mg)/MgO/SiO2/Si structure. The presence of surface MgO provided the passivation against air, thus leading to the significantly enhanced resistance to agglomeration. In addition, the resistivity of Ag(Mg) film decreased by lowering Mg content and increasing the annealing temperature as well. Furthermore, Ag adhesion to SiO2 was improved due to the formation of the interfacial MgO layer resulting from the reaction of segregated Mg with SiO2. Also, the negligible solubility of Si in Ag prevented the dissolution of free silicon produced from the reaction, Mg + SiO2 = MgO + Si, which was in contrast with the dissolution of a significant amount of silicon released from the SiO2 substrate in Cu(Mg)/SiO2/Si multilayers after annealing at high temperature, e.g., 400. The dissolved Si in Cu caused the rapid increase in resistivity in Cu(Mg)/SiO2/Si.

Review of New Carbon Materials as Catalyst Supports in Direct Alcohol Fuel Cells

2010 ◽  
Vol 31 (1) ◽  
pp. 12-17 ◽  
Author(s):  
Shuihua TANG ◽  
Gongquan SUN ◽  
Jing QI ◽  
Shiguo SUN ◽  
Junsong GUO ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Carbon Materials ◽  
Catalyst Supports ◽  
Direct Alcohol Fuel Cells ◽  
Alcohol Fuel ◽  
New Carbon Materials
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