Influence of Mg on Resistivity, Adhesion, Agglomeration of Ag(Mg)/SiO2/Si Multilayers

2001 ◽  
Vol 686 ◽  
Author(s):  
Bongjoo Kang ◽  
Heejung Yang ◽  
Sungjin Hong ◽  
Yeonkyu Ko ◽  
Chang-Oh Jeong ◽  
...  
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Enhanced Resistance ◽  
Free Silicon ◽  
Mg Content ◽  
Mgo Layers

AbstractThe effect of Mg in Ag(Mg)/SiO2/Si multilayers on adhesion, agglomeration, and resistivity after annealing in vacuum at 200 to 500 have been investigated. The annealing of Ag(Mg)/SiO2/Si multilayers produced surface and interfacial MgO layers, resulting in MgO/Ag(Mg)/MgO/SiO2/Si structure. The presence of surface MgO provided the passivation against air, thus leading to the significantly enhanced resistance to agglomeration. In addition, the resistivity of Ag(Mg) film decreased by lowering Mg content and increasing the annealing temperature as well. Furthermore, Ag adhesion to SiO2 was improved due to the formation of the interfacial MgO layer resulting from the reaction of segregated Mg with SiO2. Also, the negligible solubility of Si in Ag prevented the dissolution of free silicon produced from the reaction, Mg + SiO2 = MgO + Si, which was in contrast with the dissolution of a significant amount of silicon released from the SiO2 substrate in Cu(Mg)/SiO2/Si multilayers after annealing at high temperature, e.g., 400. The dissolved Si in Cu caused the rapid increase in resistivity in Cu(Mg)/SiO2/Si.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

scholarly journals Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 373
Author(s):  
Wen-Yen Lin ◽  
Feng-Tsun Chien ◽  
Hsien-Chin Chiu ◽  
Jinn-Kong Sheu ◽  
Kuang-Po Hsueh
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

scholarly journals Comparison of Mechanical and Microstructural Properties of as-Cast Al-Cu-Mg-Ag Alloys: Room Temperature vs. High Temperature

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1330
Author(s):  
Muhammad Farzik Ijaz ◽  
Mahmoud S. Soliman ◽  
Ahmed S. Alasmari ◽  
Adel T. Abbas ◽  
Faraz Hussain Hashmi
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Mechanical Testing ◽  
Tensile Testing ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Microstructural Properties ◽  
Testing Environments ◽  
Mechanical And Microstructural Properties ◽  
Mg Content

Unfolding the structure–property linkages between the mechanical performance and microstructural characteristics could be an attractive pathway to develop new single- and polycrystalline Al-based alloys to achieve ambitious high strength and fuel economy goals. A lot of polycrystalline as-cast Al-Cu-Mg-Ag alloy systems fabricated by conventional casting techniques have been reported to date. However, no one has reported a comparison of mechanical and microstructural properties that simultaneously incorporates the effects of both alloy chemistry and mechanical testing environments for the as-cast Al-Cu-Mg-Ag alloy systems. This preliminary prospective paper presents the examined experimental results of two alloys (denoted Alloy 1 and Alloy 2), with constant Cu content of ~3 wt.%, Cu/Mg ratios of 12.60 and 6.30, and a constant Ag of 0.65 wt.%, and correlates the synergistic comparison of mechanical properties at room and elevated temperatures. According to experimental results, the effect of the precipitation state and the mechanical properties showed strong dependence on the composition and testing environments for peak-aged, heat-treated specimens. In the room-temperature mechanical testing scenario, the higher Cu/Mg ratio alloy with Mg content of 0.23 wt.% (Alloy 1) possessed higher ultimate tensile strength when compared to the low Cu/Mg ratio with Mg content of 0.47 wt.% (Alloy 2). From phase constitution analysis, it is inferred that the increase in strength for Alloy 1 under room-temperature tensile testing is mainly ascribable to the small grain size and fine and uniform distribution of θ precipitates, which provided a barrier to slip by deaccelerating the dislocation movement in the room-temperature environment. Meanwhile, Alloy 2 showed significantly less degradation of mechanical strength under high-temperature tensile testing. Indeed, in most cases, low Cu/Mg ratios had a strong influence on the copious precipitation of thermally stable omega phase, which is known to be a major strengthening phase at elevated temperatures in the Al-Cu-Mg-Ag alloying system. Consequently, it is rationally suggested that in the high-temperature testing scenario, the improvement in mechanical and/or thermal stability in the case of the Alloy 2 specimen was mainly due to its compositional design.

scholarly journals Crystal Chemistry and Luminescence Properties of Eu-Doped Polycrystalline Hydroxyapatite Synthesized by Chemical Precipitation at Room Temperature

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 250 ◽  
Author(s):  
Francesco Baldassarre ◽  
Angela Altomare ◽  
Nicola Corriero ◽  
Ernesto Mesto ◽  
Maria Lacalamita ◽  
...  
Keyword(s):  
Fourier Transform ◽  
High Temperature ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Chemical Precipitation ◽  
Precipitation Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Inductively Coupled

Europium-doped hydroxyapatite Ca10(PO4)6(OH)2 (3% mol) powders were synthesized by an optimized chemical precipitation method at 25 °C, followed by drying at 120 °C and calcination at 450 °C and 900 °C. The obtained nanosized crystallite samples were investigated by means of a combination of inductively coupled plasma (ICP) spectroscopy, powder X-ray diffraction (PXRD), Fourier Transform Infrared (FTIR), Raman and photoluminescence (PL) spectroscopies. The Rietveld refinement in the hexagonal P63/m space group showed europium ordered at the Ca2 site at high temperature (900 °C), and at the Ca1 site for lower temperatures (120 °C and 450 °C). FTIR and Raman spectra showed slight band shifts and minor modifications of the (PO4) bands with increasing annealing temperature. PL spectra and decay curves revealed significant luminescence emission for the phase obtained at 900 °C and highlighted the migration of Eu from the Ca1 to Ca2 site as a result of increasing calcinating temperature.

PHASE EVOLUTION AND MAGNETIC PROPERTIES OF FEPT-PTTE2 NANORODS

2009 ◽  
Vol 23 (17) ◽  
pp. 3573-3578
Author(s):  
QINGYU YAN ◽  
AIDONG LI
Keyword(s):  
Magnetic Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Polyol Process ◽  
Phase Ratio ◽  
High Temperature Annealing ◽  
Two Phase

FePt - PtTe 2 two phase nanorods have been produced by a polyol process. The shape and magnetic properties of two phase nanorods with different phase ratio are investigated. L10 phase transformation of FePt in the nanorods has been accomplished at annealing temperature as low as 400 °C with Hc above 500mT. High temperature annealing causes the disintegration of the nanorods due the melting/evaporation of Te element.

Instabilities and Point Defects at Step-Free Si(001) and (111) Terraces During High Temperature Annealing

1999 ◽  
Vol 587 ◽  
Author(s):  
Doohan Lee ◽  
Jack M. Blakely
Keyword(s):  
High Temperature ◽  
Point Defect ◽  
Point Defects ◽  
Strain Energy ◽  
Annealing Temperature ◽  
Small Islands ◽  
High Temperature Annealing ◽  
Atomic Steps ◽  
The Stability

AbstractIn this paper we describe observations on the stability of extremely large Si(001) and (111) terraces that are formed by a technique described previously. Following annealing at high temperature and quenching, a series of concentric pits of monoatomic depth are observed with spacing between successive pits of the order of several microns; pits do not form on (111) until the terraces get extremely large. The occurrence of small islands or small pits on the terraces of quenched samples gives information on the majority point defect at the annealing temperature. On (001) samples that are slowly cooled from the annealing temperature, it is observed that pairs of atomic steps have formed on the large terrace; we believe that these result from the tendency of the surface to minimize the strain energy associated with the (2 × 1) reconstruction.

scholarly journals Effect of Annealing Temperature on the Li\(^{ + }\) Ionic Conductivity of La\(_{0.67 - x}\)Li\(_{3x}\)TiO\(_{3 }\)

2009 ◽  
Vol 19 (4) ◽  
pp. 235-242
Author(s):  
Le Dinh Trong ◽  
Pham Duy Long ◽  
Nguyen Nang Dinh
Keyword(s):  
High Temperature ◽  
Ionic Conductivity ◽  
Thermal Treatment ◽  
Grain Boundary ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Boundary Conductivity ◽  
Impedance Measurements ◽  
Post Annealing ◽  
Reactive Milling

Perovskite La0.67-xLi3xTiO3 with x = 0.10, 0.11, 0.12 and 0.13 were firstly annealed at 800 oC then treated by reactive milling, followed by post-annealing at temperatures from 1100 to 1200oC. The crystalline structure of grain and grain-boundary were characterized by XRD and SEM. The impedance measurements showed that nanocrystalline La0.67-xLi3xTiO3 after being annealed at 1150 oC possessed a grain conductivity as high as 1.3×10-3 S.cm-1. The grain-boundary conductivity was enhanced one order in magnitude after annealing at temperature higher 1100oC and consists of 5.8×10-5 S.cm-1. The results have also showed the limitation of the adiabatic thermal treatment for the improvement of the grain-boundary conductivity and suggested the way to overcome the limitation by rapidly cooling the samples from the high temperature to room temperature.

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