scholarly journals PDMS-Based Capacitive Pressure Sensor for Flexible Transparent Electronics

2019 ◽  
Vol 2019 ◽  
pp. 1-6 ◽  
Author(s):  
Longlong Chen ◽  
Xin Chen ◽  
Zhihan Zhang ◽  
Tongkuai Li ◽  
Tingting Zhao ◽  
...  
Keyword(s):  
Dynamic Response ◽  
Pressure Sensor ◽  
Annealing Temperature ◽  
Curing Temperature ◽  
Response Property ◽  
Capacitive Pressure Sensor ◽  
Pdms Film ◽  
Compression Property ◽  
Sensing Applications ◽  
Bending Radius

We propose a flexible pressure sensor based on polydimethylsiloxane (PDMS) and transparent electrodes. The transmittance of the total device is 82% and the minimum bending radius is 18 mm. Besides, the effect of annealing temperature on the mechanical properties of PDMS is reported here. The results show that the PDMS film under lower annealing temperature of 80°C has good compression property but poor dynamic response. While for higher temperatures, the compression property of PDMS films significantly reduced. The best compromise of annealing temperature between compression property and dynamic response is found for PDMS film of about 110°C. The pressure sensor under 110°C curing temperature shows a good sensitivity of 0.025 kPa−1 and robust response property. The device shows a promising route for future intelligent transparent sensing applications.

A Capacitive MEMS Pressure Sensor With Wavy Membrane and Linear Capacitance-Pressure Response

2019 ◽  
Author(s):  
Stephen Oke ◽  
Mohammad Shavezipur
Keyword(s):  
Pressure Sensor ◽  
Ambient Pressure ◽  
Pressure Sensors ◽  
Wave Form ◽  
Capacitive Pressure Sensor ◽  
Working Pressure ◽  
Sensing Applications ◽  
Wide Range ◽  
Capacitance Pressure ◽  
Capacitive Mems

Abstract A novel structure for capacitive MEMS pressure sensors is presented that can be used for a wide range of pressure sensing applications. The sensor is designed such that its characteristic capacitance-pressure (C-P) response is highly linear and could cover a wide range of working pressure. A capacitive pressure sensor includes two capacitive electrodes, one patterned on the substrate and the other one suspended creating a sealed cavity. The suspended electrode acts as the pressure sensitive membrane in the device and undergoes out-of-plane deformation when there is a change in ambient pressure, resulting in a change in the device’s capacitance. The design presented in this work uses a wavy-shape membrane with controlled deformations to provide a highly linear C-P response. The wavy shape of the membrane can be fabricated using grey-scale mask and lithography. ANSYS APDL multiphysics solver is used to model and simulate the pressure sensor and optimize its response. The material used in the design and simulations of the pressure sensor is silicon carbide making this design suitable for harsh environment applications. The simulation results show that if the size and the shape of the wave form in the membrane are optimized, highly linear C-P response can be achieved and also its working pressure range can be extended.

Development of circuit solution and design of capacitive pressure sensor array for applied robotics

2020 ◽  
Vol 8 (4) ◽  
pp. 296-307
Author(s):  
Konstantin Krestovnikov ◽  
Aleksei Erashov ◽  
Аleksandr Bykov
Keyword(s):  
Pressure Sensor ◽  
Output Signal ◽  
Sensor Array ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Fine Tuning ◽  
Capacitive Pressure Sensor ◽  
Cell Parameters ◽  
Linear Pattern ◽  
Sensor Structure

This paper presents development of pressure sensor array with capacitance-type unit sensors, with scalable number of cells. Different assemblies of unit pressure sensors and their arrays were considered, their characteristics and fabrication methods were investigated. The structure of primary pressure transducer (PPT) array was presented; its operating principle of array was illustrated, calculated reference ratios were derived. The interface circuit, allowing to transform the changes in the primary transducer capacitance into voltage level variations, was proposed. A prototype sensor was implemented; the dependency of output signal power from the applied force was empirically obtained. In the range under 30 N it exhibited a linear pattern. The sensitivity of the array cells to the applied pressure is in the range 134.56..160.35. The measured drift of the output signals from the array cells after 10,000 loading cycles was 1.39%. For developed prototype of the pressure sensor array, based on the experimental data, the average signal-to-noise ratio over the cells was calculated, and equaled 63.47 dB. The proposed prototype was fabricated of easily available materials. It is relatively inexpensive and requires no fine-tuning of each individual cell. Capacitance-type operation type, compared to piezoresistive one, ensures greater stability of the output signal. The scalability and adjustability of cell parameters are achieved with layered sensor structure. The pressure sensor array, presented in this paper, can be utilized in various robotic systems.

Flexible M-Tooth Hybrid Micro-Structure Based Capacitive Pressure Sensor with High Sensitivity and Wide Sensing Range

2021 ◽  
pp. 1-1
Author(s):  
Valliammai Palaniappan ◽  
Masoud Panahi ◽  
Dinesh Maddipatla ◽  
Xingzhe Zhang ◽  
Simin Masihi ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
High Sensitivity ◽  
Capacitive Pressure Sensor ◽  
Micro Structure ◽  
Sensing Range

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

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