Rapid Formation of Kinetically Sprayed Cu-Sn Intermetallic Film

The kinetically spraying method was used to fabricate an in situ copper- (Cu-) tin (Sn) intermetallic compound (IMC) film with its thickness of approximately 1 μm using a Cu-Sn mixed powder. Microsized Cu (~5 μm) and Sn (~10 μm) powders were mixed at its ratio of 45 : 55 wt.%, respectively, and then deposited onto a silicon substrate, forming an IMC layer. The actual composition of the deposited film was measured to be at a Cu : Sn ratio of 36 : 64 wt.% (in situ kinetically sprayed at 200°C). This kinetically sprayed process uses the energy source of collision and heat energy simultaneously, leading to the formation of an IMC phase. The IMC phase of Cu6Sn5 was formed successfully within 3 minutes of in situ deposition. Moreover, we obtained a Cu6Sn5 phase when the thin film was annealed in a furnace for 1 hour immediately after kinetically spraying at room temperature. However, an IMC phase was not formed in the thin film when kinetically sprayed at room temperature followed by heating on a hot plate for 3 minutes. It seems that the simultaneous supply of collision and heat energy is crucial to result in phase formation. Therefore, we have proven that the kinetically spraying process is capable of fabricating a super-thin layer of IMC film within a short time.

Download Full-text

Metal-free phosphonation of heteroarene N-oxides with trialkyl phosphite at room temperature

Organic & Biomolecular Chemistry ◽

10.1039/c7ob00402h ◽

2017 ◽

Vol 15 (15) ◽

pp. 3165-3169 ◽

Cited By ~ 7

Author(s):

Ming-Tao Chen ◽

Xia You ◽

Li-Gang Bai ◽

Qun-Li Luo

Keyword(s):

Room Temperature ◽

Trialkyl Phosphite ◽

Metal Free ◽

Mild Conditions ◽

Short Time

Heteroarene N-oxides were successfully converted to heteroarylphosphonates in a very short time under mild conditions through in situ activation with CBrCl3.

Download Full-text

Residual Stresses for In-Situ Deposition of Thin-Film High-Temperature Superconductors

Journal of Electronic Packaging ◽

10.1115/1.2905695 ◽

1994 ◽

Vol 116 (4) ◽

pp. 249-257 ◽

Cited By ~ 9

Author(s):

P. E. Phelan ◽

M. N. Ghasemi Nejhad

Keyword(s):

Thin Film ◽

Residual Stress ◽

Residual Stresses ◽

High Temperature Superconductors ◽

Oxygen Stoichiometry ◽

Chemical Shrinkage ◽

In Situ Deposition ◽

Cell Dimensions ◽

Unit Cell Dimensions

Residual stresses are caused by nonuniform thermal expansion and chemical shrinkage taking place during processing. For thin-film high-temperature superconductors, residual stresses result because of the thermal expansion mismatch between the film and substrate, and the introduction of oxygen into the film after in-situ deposition, which makes the unit cell dimensions change (chemical shrinkage) as the oxygen stoichiometry changes. Since both the reliability of the film—especially the bond between the film and substrate—and the film critical temperature are functions of the state of stress, it is important to understand how the residual stresses vary with processing conditions. Here, a three-dimensional residual stress analysis is carried out based on laminate theory, which assumes the lateral dimensions of the entire system to be much larger than its thickness. The normal residual stress components in the film, and the peeling stress at the film/substrate interface, are calculated. The results demonstrate the crucial role that chemical shrinkage plays in the formulation of residual stresses. A large portion of the stresses arises from the initial change of the unit cell dimensions due to changes in the film oxygen stoichiometry. Therefore, the processing temperature, and especially the initial oxygen pressure in the deposition chamber, are the key variables that impact the residual stresses.

Download Full-text

Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film

Scientific Reports ◽

10.1038/s41598-020-59679-9 ◽

2020 ◽

Vol 10 (1) ◽

Cited By ~ 1

Author(s):

Arthur Leis ◽

Michael Schleenvoigt ◽

Abdur Rehman Jalil ◽

Vasily Cherepanov ◽

Gregor Mussler ◽

...

Keyword(s):

Thin Film ◽

Room Temperature ◽

In Situ Measurement

Download Full-text

Thin, Flexible Supercapacitors Made from Carbon Nanofiber Electrodes Decorated at Room Temperature with Manganese Oxide Nanosheets

Journal of Nanomaterials ◽

10.1155/2013/272093 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 10

Author(s):

S. K. Nataraj ◽

Q. Song ◽

S. A. Al-Muhtaseb ◽

S. E. Dutton ◽

Q. Zhang ◽

...

Keyword(s):

Thin Film ◽

Electrochemical Performance ◽

Specific Capacitance ◽

Carbon Nanofibers ◽

Room Temperature ◽

Composite Electrode ◽

Carbon Nanofiber ◽

Two Dimensional ◽

Nanostructured Composite

We report the fabrication and electrochemical performance of a flexible thin film supercapacitor with a novel nanostructured composite electrode. The electrode was prepared byin situcoprecipitation of two-dimensional (2D) MnO2nanosheets at room temperature in the presence of carbon nanofibers (CNFs). The highest specific capacitance of 142 F/g was achieved for CNFs-MnO2electrodes in sandwiched assembly with PVA-H4SiW12O40·nH2O polyelectrolyte separator.

Download Full-text

Preparation of Pb-Based Ferroelectric thin films by Ion- and Photo-Assisted Deposition

MRS Proceedings ◽

10.1557/proc-243-155 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 8

Author(s):

Shigenori Hayashi ◽

Kenji Iijima ◽

Takashi Hirao

Keyword(s):

Thin Film ◽

Thin Films ◽

Room Temperature ◽

Preparation Process ◽

Pzt Thin Films ◽

In Situ Preparation ◽

Evaporation Technique ◽

Film Preparation ◽

Deposition Techniques

AbstractThin film process for Pb-based perovskite ferroelectrics has been investigated. Synthesis of epitaxial PLZT, PLT and PZT thin films by rfmagnetron sputtering in our laboratory was reviewed. Basic thin film process and applications were discussed. For further investigation, film preparation process was developed by co-deposition and assisted deposition techniques. The substrate temperature required for in-situ preparation of perovskite could be reduced to room temperature by an ion- and photoassisted co-evaporation technique.

Download Full-text

Rapid Evaluation of Thin Film Interfacial Reactions Using Temperature-Ramped Measurements

MRS Proceedings ◽

10.1557/proc-318-307 ◽

1993 ◽

Vol 318 ◽

Cited By ~ 5

Author(s):

J.M.E. Harper ◽

L.A. Clevenger ◽

E.G. Colgan ◽

C. Cabral ◽

B. Arcot

Keyword(s):

Thin Film ◽

Room Temperature ◽

Elevated Temperatures ◽

Interfacial Reactions ◽

Rapid Evaluation ◽

Cu Alloys ◽

Thermal Measurements ◽

Cu Dissolution ◽

Interfacial Oxygen

ABSTRACTWe describe an approach for rapid evaluation of thin film interfacial reactions using a combination of temperature-ramped in situ measurements of sheet resistance, calorimetry and stress. Electrical, mechanical and thermal measurements at elevated temperatures provide detailed reaction information which is unavailable in room temperature measurements. Kinetic data is particularly useful in making comparisons with mechanistic models. The following examples are discussed:1. Effects of interfacial oxygen on Ta as a diffusion barrier between Cu and Si,2. Effects of interfacial oxygen on the Cu/Mg reaction to form CuMg2 and Cu2Mg,3. Effects of the density of internal interfaces (grain boundaries) on Al2Cu dissolution and precipitation in Al-Cu alloys.

Download Full-text

Martensitic Nucleation in Small ZrO2 Particles

MRS Proceedings ◽

10.1557/proc-57-149 ◽

1985 ◽

Vol 57 ◽

Author(s):

I-Wei Chen ◽

Yi-Hung Chiao

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Room Temperature ◽

Equilibrium Temperature ◽

Dislocation Loops ◽

Spontaneous Transformation ◽

Transmission Electron ◽

Free Particles ◽

Martensitic Nucleation

AbstractSmall ZrO2 particles were studied by in-situ transmission electron microscopy and the types of events which led to martensitic nucleation were recorded. These metastable particles were single crystals of several hundred nanometers size and were supported on a carbon thin film but were otherwise free from any constraint. At room temperature, they are more than 1200°C below the equilibrium temperature. After dislocation loops were injected in-situ into the originally defect-free particles, a critical loop size was found beyond which the particle transformed spontaneously. It was also observed that Hertzian contacts between two particles led to martensitic nucleation and spontaneous transformation. These results were satisfactorily rationalized by ab-initio theoretical analysis.

Download Full-text