scholarly journals Fluxless Direct Soldering of Transparent Conductive Oxides (TCOs) to Copper

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Lung-Chuan Tsao ◽  
Cheng-Kai Li ◽  
Yu-Kai Sun ◽  
Shih-Ying Chang ◽  
Tung-Han Chuang
Keyword(s):  
Zinc Oxide ◽  
Room Temperature ◽  
Low Cost ◽  
Transparent Conductive Oxide ◽  
Effect Of Temperature ◽  
Transparent Conductive Oxides ◽  
Soldering Process ◽  
Melting Characteristics ◽  
Aluminum Doped Zinc Oxide ◽  
Ceramic Targets

Due to the combined advantages of low cost, good soldering properties, and appropriate melting temperature range, novel Sn8Zn3Bi1Mg active solder was developed for direct soldering of transparent conductive oxide (TCO) ceramic targets with oxygen-free copper at 200°C in air. The TCO specimens have aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) ceramics. The direct soldering process was performed without the need for flux or pre-metallization of the two transparent conductive oxides. The microstructure, phase constitution, melting characteristics, and soldering properties of the Sn8Zn3Bi1Mg active solder were investigated. The liquidus temperature of the Sn8Zn3Bi1Mg active solder was 198.6°C, which was very close to the binary Sn-Zn eutectic temperature of 198.5°C. The effect of temperature on the bonding strength of the solder joints was evaluated. The shear strengths of AZO/Cu and ZnO/Cu joints soldered with Sn8Zn3Bi1Mg active solder were 10.3 and 7.5 MPa at room temperature, respectively. Increasing the temperature from room temperature to 180°C reduced the bonding shear strengths of AZO/Cu and ZnO/Cu joints to 3.3 and 3.7 MPa, respectively.

scholarly journals Thermal Stability of the Copper and the AZO Layer on Textured Silicon

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1546
Author(s):  
Ping-Hang Chen ◽  
Wen-Jauh Chen ◽  
Jiun-Yi Tseng
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Electron Microscope ◽  
Metal Layer ◽  
Low Cost ◽  
Transparent Conductive Oxide ◽  
Scanning Transmission Electron Microscope ◽  
Copper Metallization ◽  
Scanning Transmission ◽  
Aluminum Doped Zinc Oxide

Transparent conductive oxide (TCO) film is the most widely used front electrode in silicon heterojunction (SHJ) solar cells. A copper metallization scheme can be applied to the SHJ process. The abundance of zinc in the earth’s crust makes aluminum-doped zinc oxide (AZO) an attractive low-cost substitute for indium-based TCOs. No work has focused on the properties of the copper and AZO layers on the textured silicon for solar cells. This work deposited an aluminum-doped zinc oxide layer and copper metal layer on textured (001) silicon by a sputtering to form Cu/AZO/Si stacks. The structures of Cu/AZO/Si are characterized by scanning electron microscope (SEM), scanning transmission electron microscope (STEM), and energy-dispersive X-ray spectrometer (EDS). The results show that the copper thin film detached from AZO in the valley of the textured silicon substrate at a temperature of 400 °C. Additionally, the gap between the copper and AZO layers increases as temperature increases, and the 65 nm thickness AZO layer was found to be preserved up to 800 °C.

scholarly journals A Facile Fabrication of a Potentiometric Arrayed Glucose Biosensor Based on Nafion-GOx/GO/AZO

Sensors ◽  
2020 ◽  
Vol 20 (4) ◽  
pp. 964
Author(s):  
Jung-Chuan Chou ◽  
Si-Hong Lin ◽  
Tsu-Yang Lai ◽  
Po-Yu Kuo ◽  
Chih-Hsien Lai ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Impedance ◽  
Limit Of Detection ◽  
Low Cost ◽  
Glucose Biosensor ◽  
Average Sensitivity ◽  
Glucose Biosensors ◽  
Coating Method ◽  
Aluminum Doped Zinc Oxide ◽  
Screen Printing Technology

In this study, the potentiometric arrayed glucose biosensors, which were based on zinc oxide (ZnO) or aluminum-doped zinc oxide (AZO) sensing membranes, were fabricated by using screen-printing technology and a sputtering system, and graphene oxide (GO) and Nafion-glucose oxidase (GOx) were used to modify sensing membranes by using the drop-coating method. Next, the material properties were characterized by using a Raman spectrometer, a field-emission scanning electron microscope (FE-SEM), and a scanning probe microscope (SPM). The sensing characteristics of the glucose biosensors were measured by using the voltage–time (V-T) measurement system. Finally, electrochemical impedance spectroscopy (EIS) was conducted to analyze their charge transfer abilities. The results indicated that the average sensitivity of the glucose biosensor based on Nafion-GOx/GO/AZO was apparently higher than that of the glucose biosensor based on Nafion-GOx/GO/ZnO. In addition, the glucose biosensor based on Nafion-GOx/GO/AZO exhibited an excellent average sensitivity of 15.44 mV/mM and linearity of 0.997 over a narrow range of glucose concentration range, a response time of 26 s, a limit of detection (LOD) of 1.89 mM, and good reproducibility. In terms of the reversibility and stability, the hysteresis voltages (VH) were 3.96 mV and 2.42 mV. Additionally, the glucose biosensor also showed good anti-inference ability and reproducibility. According to these results, it is demonstrated that AZO is a promising material, which could be used to develop a reliable, simple, and low-cost potentiometric glucose biosensor.

Room-Temperature Sputtered Aluminum-Doped Zinc Oxide for Semitransparent Perovskite Solar Cells

2020 ◽  
Vol 3 (10) ◽  
pp. 9610-9617
Author(s):  
Nan Li ◽  
Fanping Meng ◽  
Feng Huang ◽  
Gang Yu ◽  
Zenggui Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Room Temperature ◽  
Perovskite Solar Cells ◽  
Aluminum Doped Zinc Oxide

scholarly journals Near-perfect broadband absorption from hyperbolic metamaterial nanoparticles

2017 ◽  
Vol 114 (6) ◽  
pp. 1264-1268 ◽  
Author(s):  
Conor T. Riley ◽  
Joseph S. T. Smalley ◽  
Jeffrey R. J. Brodie ◽  
Yeshaiahu Fainman ◽  
Donald J. Sirbuly ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
High Performance ◽  
Low Cost ◽  
Perfect Absorption ◽  
Hyperbolic Metamaterial ◽  
Broadband Absorption ◽  
Essential Components ◽  
Aluminum Doped Zinc Oxide ◽  
Detection Energy ◽  
Planar Films

Broadband absorbers are essential components of many light detection, energy harvesting, and camouflage schemes. Current designs are either bulky or use planar films that cause problems in cracking and delamination during flexing or heating. In addition, transferring planar materials to flexible, thin, or low-cost substrates poses a significant challenge. On the other hand, particle-based materials are highly flexible and can be transferred and assembled onto a more desirable substrate but have not shown high performance as an absorber in a standalone system. Here, we introduce a class of particle absorbers called transferable hyperbolic metamaterial particles (THMMP) that display selective, omnidirectional, tunable, broadband absorption when closely packed. This is demonstrated with vertically aligned hyperbolic nanotube (HNT) arrays composed of alternating layers of aluminum-doped zinc oxide and zinc oxide. The broadband absorption measures >87% from 1,200 nm to over 2,200 nm with a maximum absorption of 98.1% at 1,550 nm and remains large for high angles. Furthermore, we show the advantages of particle-based absorbers by transferring the HNTs to a polymer substrate that shows excellent mechanical flexibility and visible transparency while maintaining near-perfect absorption in the telecommunications region. In addition, other material systems and geometries are proposed for a wider range of applications.

scholarly journals Investigation of Organic Field-Effect Transistor (OFET) based NO2 Sensing Response using Low-Cost Green Synthesized Zinc Oxide Nanoparticles

2020 ◽  
Vol 33 (1) ◽  
pp. 31-36
Author(s):  
G. Balanagireddy ◽  
Ashwath Narayana ◽  
M. Roopa
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Average Particle Size ◽  
Microwave Assisted Synthesis ◽  
Average Particle ◽  
Nanostructured Particles ◽  
Effect Transistor

A low-cost and green-synthesized zinc oxide nanostructured particles are extensively studied owing to their remarkable and ample characteristics with less toxicity and eco-friendly approach. The present work comprehends the green synthesis of ZnO nanostructured particles using bougainvillea leaf extract-arbitrated microwave-assisted synthesis and their use in field effect transistor for nitrogen dioxide sensing at room temperature. The as-synthesized nanoparticles were characterized using analytical techniques; XRD determined the pure crystallite structure with no impurities, SEM confirmed the spherical shape of nanoparticles with ~20 nm (average particle size) and the atomic weight percentage were analyzed using EDAX, notable photophysical properties were revealed from absorption and emission spectra performed using UV-visible spectroscopy. Poly(3-hexylthiophene) and ZnO nanoparticles were employed in the field effect transistor (p-type) for NO2 sensing at room temperature with the mobility (field-effect) of ~10-4 cm2 V-1 s-1. The sensitivity of the fabricated OFET device was extracted from the transistor characteristics (at Vgs = -30 V and Vds = -40 V) found to be ~4.8 × 10-3 nA/ppm. The device exhibited engrossing characteristics such as excellent recoverability (> 95%), with ultrafast response time (< 30 s) and greater sensitivity with high stability as can be assessed from the electrical characteristics.

Kinetic Mechanism on Synthesis of Copper Nanoparticle from Reduction Reaction - Effect of Temperature

2015 ◽  
Vol 754-755 ◽  
pp. 1012-1016
Author(s):  
Noorsuhana Mohd Yusof ◽  
Junaidah Jai ◽  
Ahmad Hafizie Zaini ◽  
Nur Hashimah Alias ◽  
Nurul Aimi Ghazali ◽  
...  
Keyword(s):  
Copper Nanoparticles ◽  
Room Temperature ◽  
Low Cost ◽  
Copper Nitrate ◽  
Kinetic Mechanism ◽  
Reduction Reaction ◽  
Reducing Agent ◽  
Effect Of Temperature ◽  
Hydroxyl Groups ◽  
Copper Nanoparticle

Copper nanoparticles, due to their interesting properties, low cost preparation and many potential applications in catalysis, cooling fluid or conductive inks, have attracted a lot of interest in recent years. In this study, copper nanoparticles were synthesized through the palm leaves extract that act as reducing agent. In this synthesis route, the hydroxyl groups of the polyphenols in palm extract are capable to act as reducing agent for reduction reaction. The effect of temperature given starting with control parameters at room temperature proceeds to 40, 50, 60, 70 and 80°C with the time length of 2 hours and 10 milimol copper nitrate aqueous solution. Characterization had been conducted using the instrument of UV-vis spectrophotometer, FTIR and ESEM. The average size of all powder nanoparticles was found to 109, 86, 196, 133, 241, and 230nm accordingly from room temperature till 80°C. The correspondence analysis of the results yielded that the optimum temperature was at 40°C which is 86nm of average copper nanoparticle size.

Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering on Mylar Substrates at Room Temperature

2001 ◽  
Vol 685 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Low Cost ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Oxide Thin Films ◽  
Large Area ◽  
Axis Orientation

AbstractAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

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