scholarly journals Thermal Stability of the Copper and the AZO Layer on Textured Silicon

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1546
Author(s):  
Ping-Hang Chen ◽  
Wen-Jauh Chen ◽  
Jiun-Yi Tseng
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Electron Microscope ◽  
Metal Layer ◽  
Low Cost ◽  
Transparent Conductive Oxide ◽  
Scanning Transmission Electron Microscope ◽  
Copper Metallization ◽  
Scanning Transmission ◽  
Aluminum Doped Zinc Oxide

Transparent conductive oxide (TCO) film is the most widely used front electrode in silicon heterojunction (SHJ) solar cells. A copper metallization scheme can be applied to the SHJ process. The abundance of zinc in the earth’s crust makes aluminum-doped zinc oxide (AZO) an attractive low-cost substitute for indium-based TCOs. No work has focused on the properties of the copper and AZO layers on the textured silicon for solar cells. This work deposited an aluminum-doped zinc oxide layer and copper metal layer on textured (001) silicon by a sputtering to form Cu/AZO/Si stacks. The structures of Cu/AZO/Si are characterized by scanning electron microscope (SEM), scanning transmission electron microscope (STEM), and energy-dispersive X-ray spectrometer (EDS). The results show that the copper thin film detached from AZO in the valley of the textured silicon substrate at a temperature of 400 °C. Additionally, the gap between the copper and AZO layers increases as temperature increases, and the 65 nm thickness AZO layer was found to be preserved up to 800 °C.

scholarly journals Fluxless Direct Soldering of Transparent Conductive Oxides (TCOs) to Copper

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Lung-Chuan Tsao ◽  
Cheng-Kai Li ◽  
Yu-Kai Sun ◽  
Shih-Ying Chang ◽  
Tung-Han Chuang
Keyword(s):  
Zinc Oxide ◽  
Room Temperature ◽  
Low Cost ◽  
Transparent Conductive Oxide ◽  
Effect Of Temperature ◽  
Transparent Conductive Oxides ◽  
Soldering Process ◽  
Melting Characteristics ◽  
Aluminum Doped Zinc Oxide ◽  
Ceramic Targets

Due to the combined advantages of low cost, good soldering properties, and appropriate melting temperature range, novel Sn8Zn3Bi1Mg active solder was developed for direct soldering of transparent conductive oxide (TCO) ceramic targets with oxygen-free copper at 200°C in air. The TCO specimens have aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) ceramics. The direct soldering process was performed without the need for flux or pre-metallization of the two transparent conductive oxides. The microstructure, phase constitution, melting characteristics, and soldering properties of the Sn8Zn3Bi1Mg active solder were investigated. The liquidus temperature of the Sn8Zn3Bi1Mg active solder was 198.6°C, which was very close to the binary Sn-Zn eutectic temperature of 198.5°C. The effect of temperature on the bonding strength of the solder joints was evaluated. The shear strengths of AZO/Cu and ZnO/Cu joints soldered with Sn8Zn3Bi1Mg active solder were 10.3 and 7.5 MPa at room temperature, respectively. Increasing the temperature from room temperature to 180°C reduced the bonding shear strengths of AZO/Cu and ZnO/Cu joints to 3.3 and 3.7 MPa, respectively.

scholarly journals Aluminum-Doped Zinc Oxide as Front Electrode for Rear Emitter Silicon Heterojunction Solar Cells with High Efficiency

2019 ◽  
Vol 9 (5) ◽  
pp. 862 ◽  
Author(s):  
Daniel Meza ◽  
Alexandros Cruz ◽  
Anna Morales-Vilches ◽  
Lars Korte ◽  
Bernd Stannowski
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Indium Tin Oxide ◽  
High Efficiency ◽  
Power Conversion ◽  
Transparent Conductive Oxide ◽  
Rear Side ◽  
Aluminum Doped Zinc Oxide

Transparent conductive oxide (TCO) layers of aluminum-doped zinc oxide (ZnO:Al) were investigated as a potential replacement of indium tin oxide (ITO) for the front contact in silicon heterojunction (SHJ) solar cells in the rear emitter configuration. It was found that ZnO:Al can be tuned to yield cell performance almost at the same level as ITO with a power conversion efficiency of 22.6% and 22.8%, respectively. The main reason for the slight underperformance of ZnO:Al compared to ITO was found to be a higher contact resistivity between this material and the silver grid on the front side. An entirely indium-free SHJ solar cell, replacing the ITO on the rear side by ZnO:Al as well, reached a power conversion efficiency of 22.5%.

The High Resolution Scanning Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 316-317
Author(s):  
A. V. Crewe
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
High Vacuum ◽  
Scanning Transmission Electron Microscope ◽  
Ultra High Vacuum ◽  
Resolving Power ◽  
Imaging Characteristics ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Moment

The high resolution STEM is now a fact of life. I think that we have, in the last few years, demonstrated that this instrument is capable of the same resolving power as a CEM but is sufficiently different in its imaging characteristics to offer some real advantages.It seems possible to prove in a quite general way that only a field emission source can give adequate intensity for the highest resolution^ and at the moment this means operating at ultra high vacuum levels. Our experience, however, is that neither the source nor the vacuum are difficult to manage and indeed are simpler than many other systems and substantially trouble-free.

Development of 200 kV Scanning-Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 410-411
Author(s):  
H. Koike ◽  
S. Sakurai ◽  
K. Ueno ◽  
M. Watanabe
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
The Other ◽  
Morphological Observation ◽  
Magnetic Domains ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Backscattered Electron ◽  
Increasing Demand

In recent years, there has been increasing demand for higher voltage SEMs, in the field of surface observation, especially that of magnetic domains, dislocations, and electron channeling patterns by backscattered electron microscopy. On the other hand, the resolution of the CTEM has now reached 1 ∼ 2Å, and several reports have recently been made on the observation of atom images, indicating that the ultimate goal of morphological observation has beem nearly achieved.

To What Extent are Inelastically Scattered Electrons Useful in the Stem?

1973 ◽  
Vol 31 ◽  
pp. 286-287 ◽  
Author(s):  
H. Rose
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Electron Correlation ◽  
Quantum Noise ◽  
Collection Efficiency ◽  
Scanning Transmission Electron Microscope ◽  
Electron Cloud ◽  
Scanning Time ◽  
Transmission Electron ◽  
Scanning Transmission

The scanning transmission electron microscope offers the possibility of utilizing inelastically scattered electrons. Use of these electrons in addition to the elastically scattered electrons should reduce the scanning time (dose) Which is necessary to keep the quantum noise below a certain level. Hence it should lower the radiation damage. For high resolution, Where the collection efficiency of elastically scattered electrons is small, the use of Inelastically scattered electrons should become more and more favorable because they can all be detected by means of a spectrometer. Unfortunately, the Inelastic scattering Is a non-localized interaction due to the electron-electron correlation, occurring predominantly at the circumference of the atomic electron cloud.

A General Method for Spectrometer Design in the Scoff Approximation

1976 ◽  
Vol 34 ◽  
pp. 538-539
Author(s):  
J. R. Fields
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Energy Analysis ◽  
Incident Beam ◽  
Scanning Transmission Electron Microscope ◽  
Chemical Identification ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
General Method

The energy analysis of electrons scattered by a specimen in a scanning transmission electron microscope can improve contrast as well as aid in chemical identification. In so far as energy analysis is useful, one would like to be able to design a spectrometer which is tailored to his particular needs. In our own case, we require a spectrometer which will accept a parallel incident beam and which will focus the electrons in both the median and perpendicular planes. In addition, since we intend to follow the spectrometer by a detector array rather than a single energy selecting slit, we need as great a dispersion as possible. Therefore, we would like to follow our spectrometer by a magnifying lens. Consequently, the line along which electrons of varying energy are dispersed must be normal to the direction of the central ray at the spectrometer exit.

Resolution in the Scanning Transmission Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 454-455
Author(s):  
M. G. R. Thomson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Spherical Aberration ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Objective Lens ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

The variation of contrast and signal to noise ratio with change in detector solid angle in the high resolution scanning transmission electron microscope was discussed in an earlier paper. In that paper the conclusions were that the most favourable conditions for the imaging of isolated single heavy atoms were, using the notation in figure 1, either bright field phase contrast with β0⋍0.5 α0, or dark field with an annular detector subtending an angle between ao and effectively π/2.The microscope is represented simply by the model illustrated in figure 1, and the objective lens is characterised by its coefficient of spherical aberration Cs. All the results for the Scanning Transmission Electron Microscope (STEM) may with care be applied to the Conventional Electron Microscope (CEM). The object atom is represented as detailed in reference 2, except that ϕ(θ) is taken to be the constant ϕ(0) to simplify the integration. This is reasonable for θ ≤ 0.1 θ0, where 60 is the screening angle.

Some Quantification Problems in Parallel EELS Images

1990 ◽  
Vol 48 (2) ◽  
pp. 36-37
Author(s):  
G. Botton ◽  
G. L’Espérance ◽  
M.D. Ball ◽  
C.E. Gallerneault
Keyword(s):  
Electron Microscope ◽  
Imaging System ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Acquisition Time ◽  
Thickness Variation ◽  
Transmission Electron ◽  
Distribution Of Elements ◽  
Scanning Transmission ◽  
Present Distribution

The recently developed parallel electron energy loss spectrometers (PEELS) have led to a significant reduction in spectrum acquisition time making EELS more useful in many applications in material science. Dwell times as short as 50 msec per spectrum with a PEELS coupled to a scanning transmission electron microscope (STEM), can make quantitative EEL images accessible. These images would present distribution of elements with the high spatial resolution inherent to EELS. The aim of this paper is to briefly investigate the effect of acquisition time per pixel on the signal to noise ratio (SNR), the effect of thickness variation and crystallography and finally the energy stability of spectra when acquired in the scanning mode during long periods of time.The configuration of the imaging system is the following: a Gatan PEELS is coupled to a CM30 (TEM/STEM) electron microscope, the control of the spectrometer and microscope is performed through a LINK AN10-85S MCA which is interfaced to a IBM RT 125 (running under AIX) via a DR11W line.

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