scholarly journals The Effect of Ultrasonic Treatments on Current Transport Processes in Al-Al2O3-p-CdTe-Mo Structure

2021 ◽  
Vol 2021 ◽  
pp. 1-6
Author(s):  
A. K. Uteniyazov ◽  
A. Y. Leyderman ◽  
M. V. Gafurova ◽  
Kh. N. Juraev ◽  
K. A. Dauletov
Keyword(s):  
Current Flow ◽  
Forward Direction ◽  
Transport Processes ◽  
Current Transport ◽  
Ultrasonic Action ◽  
Recombination Centers ◽  
Nonequilibrium Carriers

It was established that ultrasonic treatments (USTs) have practically no effect on the patterns of current flow in the Al-Al2O3-p-CdTe-Mo structure in the forward direction, namely, as in the absence of ultrasonic action, they appear in the sequence J∼V, J∼V2, J∼V5.3, and J∼V2. The effect of ultrasonic treatments affects only the magnitude of the flowing current; at low voltages, the current becomes somewhat larger, and at high voltages, it practically does not change. Changes in the magnitude of the flowing current are explained on the basis of the assumption that the recombination of nonequilibrium carriers in such a structure occurs through complex pair recombination complexes and, as a result of ultrasonic treatments, the number of both small acceptors and deep recombination centers increases.

Current Transport in Low-Resistance Metal-InP Contacts

1993 ◽  
Vol 300 ◽  
Author(s):  
Thomas Clausen ◽  
Otto Leistiko
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Current Flow ◽  
Thermionic Emission ◽  
Transport Processes ◽  
Potential Difference ◽  
Current Transport ◽  
Diffusion Limited ◽  
P Type

ABSTRACTThe limiting transport processes for current flow across metal-semiconductor (MS) ohmic contacts to n- and p-type InP have been investigated for Au-based metallizations containing the doping elements Germanium and Zinc. It has been found that the Schottky barrier is lowered and in some cases vanishes during annealing. The current flow for an optimal ohmic contact is diffusion limited by a Fermi potential difference between the alloyed metallization and the bulk InP. For non-optimal ohmic contacts the current flow is also limited by thermionic emission across a low effective Schottky barrier.

scholarly journals Features of current transport in Al–Al2O3–p-CdTe–Mo structure

2020 ◽  
Vol 23 (4) ◽  
pp. 339-345
Author(s):  
A.K. Uteniyazov ◽  
◽  
A.Yu. Leyderman ◽  
R.A. Ayukhanov ◽  
E.S. Esenbaeva ◽  
...  
Keyword(s):  
Power Law ◽  
Forward Direction ◽  
Transport Processes ◽  
Diode Structure ◽  
Light Illumination ◽  
Current Transport ◽  
Drift Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Non Equilibrium

The results of studies of the current-voltage characteristics of the Al–Al2O3–p-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage in the form J ~ Vα. It has been shown that the Al–Al2O3–p-CdTe–Mo structure can be considered as a n+-p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.

Vertical current transport processes in MOS-HEMT heterostructures

2020 ◽  
Vol 527 ◽  
pp. 146605
Author(s):  
Juraj Racko ◽  
Tibor Lalinský ◽  
Miroslav Mikolášek ◽  
Peter Benko ◽  
Sebastian Thiele ◽  
...  
Keyword(s):  
Transport Processes ◽  
Current Transport

Tunneling Effects and Electrical Conductivity of CNT Polymer Composites

2011 ◽  
Vol 1304 ◽  
Author(s):  
S. Xu ◽  
O. Rezvanian ◽  
K. Peters ◽  
M.A. Zikry
Keyword(s):  
Electrical Conductivity ◽  
Polymer Composites ◽  
Current Flow ◽  
Electron Tunneling ◽  
Search Algorithm ◽  
Matrix Material ◽  
Three Dimensional ◽  
Current Transport ◽  
Current Densities ◽  
Tunneling Distance

ABSTRACTA three-dimensional (3D) carbon nanotube (CNT) network computational model was developed to investigate the electrical conductivity and current flow in polymer composites with randomly dispersed CNTs. A search algorithm was developed to determine conductive paths for 3D CNT arrangements and to account for electron tunneling effects. Tunneled currents were obtained as a function of tunneling distance and matrix material. Several possible CNT conductive paths were obtained and finite-element representative volume elements (RVEs) were then used to predict current densities in different CNT arrangements. The predictions indicate that random CNT arrangements can be optimized for current transport.

(110) facets and dislocation structure of low-angle grain boundaries in YBa2Cu3O7−δ and Y0.7Ca0.3Ba2Cu3O7−δ thin film bicrystals

2007 ◽  
Vol 22 (4) ◽  
pp. 950-957 ◽  
Author(s):  
Xueyan Song
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Current Flow ◽  
Dislocation Core ◽  
Current Transport ◽  
Contrast Imaging ◽  
Grain Boundary Plane ◽  
Z Contrast

The facet and dislocation structure of 5° and 7° [001]-tilt grain boundaries of YBa2Cu3O7−δ (YBCO) and Y0.7Ca0.3Ba2Cu3O7−δ (YCaBCO) thin film bicrystals were studied. A 24° [001]-tilt YBCO grain boundary was also examined to contrast with the low angle grain boundary faceting behavior. All the low-angle grain boundaries exhibit strong faceting along (100)/(010) and (110) and possess both straight symmetric segments containing equally spaced [100] unit dislocations and step asymmetric segments composed of (110) and (100)/(010) facets. Grain boundaries with a higher degree of meander acquired up to 40% (110) facets. The atomic structure of (110) facets was revealed by the atomic resolution Z-contrast imaging. The (110) facets are dissociated for both the YBCO and YCaBCO grain boundaries. We also found the Ca-doped (110) facets to be more extended along the grain boundary plane, consistent with our earlier finding of a dissociated dislocation core in Ca-doped (100) facets. These 5° and 7° misorientations that we studied are just in the range at which YBCO grain boundaries start to become obstacles to current flow. The above results will be helpful for understanding the current transport across YBCO low-angle grain boundaries.

Current transport processes in In2O3-ZnSe-(Zn1 − x Cdx Te)1 − y(In2 Te3)y heterostructures

1995 ◽  
Vol 256 (1-2) ◽  
pp. 23-30 ◽  
Author(s):  
A.P. Belyaev ◽  
V.P. Rubets ◽  
I.P. Kalinkin
Keyword(s):  
Transport Processes ◽  
Current Transport

The Growth of Effective Potential Barrier Height in Au/ (100) n-GaP Contact Induced by Phosphorous Ion Implantation

1992 ◽  
Vol 262 ◽  
Author(s):  
Anatol I. Ivashchenko ◽  
F.Ya. Kopanskaya ◽  
A. I. Solomonov ◽  
V. P. Tarchenko
Keyword(s):  
Ion Implantation ◽  
Barrier Height ◽  
Current Transport ◽  
Rapid Annealing ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Recombination Centers ◽  
Current Voltage Characteristics ◽  
Post Implantation

ABSTRACTThe effect of phosphorous ion implantation and/or rapid thermal treatment on the behaviour of Schottky barrier elect-rophysical characteristics formed on the plane (100) of n-GaP epitaxial layer is discussed. Even though the implantation and post implantation rapid annealing lead to the generation of deep recombination centers in the bulk, the dominant mechanism of current transport across the barrier structure becomes thermo-ionic - like in initial samples. The analysis of the behaviour of forward current-voltage characteristics, steady state capacitance-voltage characteristics and DLTS data allow to conclude that the obtained reduction of forward current after ion im- plactation can be attributed to an increase of effective potenia! barrier height.

Saturn's E, G and F rings: modulated by the plasma sheet

1984 ◽  
Vol 75 ◽  
pp. 597
Author(s):  
E. Grün ◽  
G.E. Morfill ◽  
T.V. Johnson ◽  
G.H. Schwehm
Keyword(s):  
Solar Wind ◽  
Direct Contact ◽  
Transport Processes ◽  
Time Variable ◽  
Dust Particles ◽  
Spatial Diffusion ◽  
Drag Forces ◽  
Orbit Perturbation ◽  
Time Variations ◽  
F Ring

ABSTRACTSaturn's broad E ring, the narrow G ring and the structured and apparently time variable F ring(s), contain many micron and sub-micron sized particles, which make up the “visible” component. These rings (or ring systems) are in direct contact with magnetospheric plasma. Fluctuations in the plasma density and/or mean energy, due to magnetospheric and solar wind processes, may induce stochastic charge variations on the dust particles, which in turn lead to an orbit perturbation and spatial diffusion. It is suggested that the extent of the E ring and the braided, kinky structure of certain portions of the F rings as well as possible time variations are a result of plasma induced electromagnetic perturbations and drag forces. The G ring, in this scenario, requires some form of shepherding and should be akin to the F ring in structure. Sputtering of micron-sized dust particles in the E ring by magnetospheric ions yields lifetimes of 102to 104years. This effect as well as the plasma induced transport processes require an active source for the E ring, probably Enceladus.

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