The Growth of Effective Potential Barrier Height in Au/ (100) n-GaP Contact Induced by Phosphorous Ion Implantation

1992 ◽  
Vol 262 ◽  
Author(s):  
Anatol I. Ivashchenko ◽  
F.Ya. Kopanskaya ◽  
A. I. Solomonov ◽  
V. P. Tarchenko
Keyword(s):  
Ion Implantation ◽  
Barrier Height ◽  
Current Transport ◽  
Rapid Annealing ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Recombination Centers ◽  
Current Voltage Characteristics ◽  
Post Implantation

ABSTRACTThe effect of phosphorous ion implantation and/or rapid thermal treatment on the behaviour of Schottky barrier elect-rophysical characteristics formed on the plane (100) of n-GaP epitaxial layer is discussed. Even though the implantation and post implantation rapid annealing lead to the generation of deep recombination centers in the bulk, the dominant mechanism of current transport across the barrier structure becomes thermo-ionic - like in initial samples. The analysis of the behaviour of forward current-voltage characteristics, steady state capacitance-voltage characteristics and DLTS data allow to conclude that the obtained reduction of forward current after ion im- plactation can be attributed to an increase of effective potenia! barrier height.

Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

2014 ◽  
Vol 778-780 ◽  
pp. 657-660 ◽  
Author(s):  
Ulrike Grossner ◽  
Francesco Moscatelli ◽  
Roberta Nipoti
Keyword(s):  
Activation Energy ◽  
Ideality Factor ◽  
Reverse Current ◽  
Activation Energies ◽  
Forward Current ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
The One ◽  
Post Implantation

Two families of Al+implanted vertical p+in diodes that have been processed all by identical steps except the post implantation annealing one have been characterized with current voltage measurements from -100 to +5V at different temperatures. Analysis of the static forward current voltage characteristics shows two different ideality factor regions, which are distinct for each family. The reverse current voltage characteristics reveals corresponding two different activation energies. These are assumed to be correlated to the Z1/2defect for the one case and another one with an activation energy of 0.25eV.

New Method for Improving the Electrical Characteristics of P-N Junction Diode

2011 ◽  
Vol 378-379 ◽  
pp. 606-609 ◽  
Author(s):  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Amporn Poyai ◽  
Surasak Niemcharoen
Keyword(s):  
Carrier Lifetime ◽  
Series Resistance ◽  
Device Performance ◽  
Electrical Characteristics ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Junction Diode

This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 619-622 ◽  
Author(s):  
Gaetano Izzo ◽  
Grazia Litrico ◽  
Lucia Calcagno ◽  
Gaetano Foti ◽  
Francesco La Via
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Free Carrier ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Nitrogen Concentrations ◽  
Current Voltage Characteristics

The defects produced by irradiation with 7 MeV C+ induce a change in the electrical properties of 4H-SiC Schottky diodes. Capacitance-voltage and Current-voltage characteristics of the diodes fabricated in epilayers doped with different nitrogen concentrations were monitored before and after irradiation with different fluences. The Capacitance-voltage curves show free carrier compensation after low fluence irradiation and it was found that the reduction of carriers per ion induced vacancy increases with nitrogen content. The forward current-voltage characteristics of the diodes show an increase in the series resistance after irradiation. This change is mainly related to the high compensation occurring around the end of the ion range.

scholarly journals Investigation on the Rapid Annealing of Ti-Au Composite Electrode on n-Type (111) CdZnTe Crystals

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 156
Author(s):  
Haozhi Shi ◽  
Shulei Wang ◽  
Jijun Zhang ◽  
Zhubin Shi ◽  
Jiahua Min ◽  
...  
Keyword(s):  
Barrier Height ◽  
Adhesion Strength ◽  
Annealing Temperature ◽  
Composite Electrode ◽  
Composite Electrodes ◽  
Au Electrode ◽  
Rapid Annealing ◽  
Optimal Annealing Temperature ◽  
Current Voltage ◽  
Capacitance Voltage

In this paper, the ohmic properties of Ti, Al, and Ti-Au composite electrodes on n-type (111) CdZnTe crystal deposited by vacuum evaporation method were first analyzed, and then the rapid annealing of Ti-Au electrode under Ar atmosphere with different temperature and time was explored. The ohmic property and barrier height were evaluated by current–voltage (I–V) and capacitance-voltage (C–V) measurements, and the adhesion strength of various electrodess to CdZnTe was compared. The Ti-Au electrode on CdZnTe showed the lowest leakage current and barrier height, and the highest adhesion strength among the three kinds of electrodes on (111) CdZnTe crystals. The rapid annealing of Ti-Au electrode under Ar atmosphere was proved to improve its ohmic property and adhesion strength, and the optimal annealing temperature and time were found to be 423 K and 6 min, respectively. The barrier height of the Ti-Au/CdZnTe electrode is 0.801 eV through rapid annealing for 6 min at 423 K annealing temperature, and the adhesion is 1225 MPa, which increases by 50% compared with that without rapid annealing.

Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics

MRS Advances ◽  
2016 ◽  
Vol 1 (54) ◽  
pp. 3637-3642 ◽  
Author(s):  
Roberta Nipoti ◽  
Giovanna Sozzi ◽  
Maurizio Puzzanghera ◽  
Roberto Menozzi
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Reverse Current ◽  
Activation Energies ◽  
Vacancy Defect ◽  
Current Component ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Post Implantation

ABSTRACT The temperature dependence of the forward and reverse current voltage characteristics of circular Al+ implanted 4H-SiC p-i-n vertical diodes of various diameters, post implantation annealed at 1950 °C/5 min, have been used to obtain the thermal activation energies of the defects responsible of the generation and the recombination currents, as well as the area and the periphery current component of the current voltage characteristics. The former have values compatible with those of the traps associated to the carbon vacancy defect in 4H-SiC. The hypothesis that only these traps may justify the trend of the current voltage characteristics of the studied diodes has been tested by simulations in a Synopsys Sentaurus TCAD suite.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics
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