scholarly journals Comparison of Enameled Steel Substrate Properties for Thick Film Use

1980 ◽  
Vol 7 (1-3) ◽  
pp. 55-62 ◽  
Author(s):  
S. J. Stein ◽  
C. Huang ◽  
A. S. Gelb
Keyword(s):  
Thick Film ◽  
Steel Substrate ◽  
Soda Lime ◽  
Dissipation Factor ◽  
Soda Lime Glass ◽  
Film Material ◽  
Insulation Resistance ◽  
Large Area ◽  
Substrate Properties ◽  
Steel Substrates

Porcelain enameled steels have had a long history of industrial, structural and related applications. Recent interest in such materials has centered on electrical uses as a substrate for hybrid circuits, additive printed wiring, and packaging. A study of some of the critical properties of available enameled steels was undertaken.Five types of enameled steel substrates from three manufacturers were tested. The electrical properties studied included dielectric constant, dissipation factor, voltage breakdown, surface and bulk insulation resistance. The effect of humidity on the insulation resistance of the enamel coatings themselves was compared. The influence of the thermal conductivity of the substrates was also examined.The properties of a thick film resistor system was determined on the various enamel steel substrates. The properties tested included resistivity and TCR firing sensitivity.The effect of the type of substrate on the properties of a selection of thick film conductors was determined. Conductivity and gold and aluminum wire bond strength were compared on the various substrates.The dielectric properties of a multilayer/crossover dielectric thick film material were compared among 96% alumina, soda-lime glass and the various enameled steel substrates.Many individual differences between the enameled steel substrates were found. However, all of the substrates could be utilized to produce satisfactory thick film circuits when the proper choice of thick film materials was made.Continuing changes, improvements and additional sources of supply are expected to overcome some of the present shortcomings. These should enhance the use of such substrates for large area uses and lower cost applications.

Effects of Substrates on the Composition and Microstructure of TiO2 Thin Films Prepared by the LPD Method

2007 ◽  
Vol 280-283 ◽  
pp. 795-800 ◽  
Author(s):  
Huogen Yu ◽  
Jia Guo Yu ◽  
Bei Cheng ◽  
C.H. Ao ◽  
S.C. Lee
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Photoelectron Spectroscopy ◽  
Steel Substrate ◽  
Precursor Solution ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Steel Substrates

TiO2 thin films were prepared on soda lime glass, fused quartz and stainless steel substrates by liquid phase deposition (LPD) method from a (NH4)2TiF6 aqueous solution upon the addition of boric acid (H3BO3), and then calcined at 500oC for 2 h. The prepared films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). It was found that the substrates obviously influenced the element composition and microstructure of TiO2 thin films. Except Ti, O and a small amount of F and N elements, which came from the precursor solution, some Si (or Fe) element in the thin films deposited on soda lime glass and quartz substrates (or on stainless steel substrate) was confirmed. The Si (or Fe) element in the thin films could be attributed to two sources. One was from the SiF6 2- ions (or FeF6 2- ions) formed by a reaction between the treatment solution and soda lime glass or quartz (or stainless steel) substrates. The other was attributed to the diffusion of Si (or Fe) from the surface of substrates into the TiO2 thin films after calcination at 500oC. The Si (or Fe) element in the TiO2 thin films could behave as a dopant and resulted in the formation of composite SiO2/TiO2 (or Fe2O3/TiO2) thin films on the substrates.

GROWTH OF CARBON NANOTUBES ON THE GLASS SUBSTRATE FOR FLAT PANEL DISPLAY APPLICATIONS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 979-982 ◽  
Author(s):  
JAEMYUNG KIM ◽  
KWANGSOO NO
Keyword(s):  
Carbon Nanotubes ◽  
Current Density ◽  
Chemical Vapor ◽  
Soda Lime ◽  
Emission Current Density ◽  
Emission Current ◽  
Soda Lime Glass ◽  
Flat Panel Display ◽  
Large Area ◽  
Glass Substrates

We have grown carbon nanotubes (CNTs) on the soda-lime glass substrates using chemical vapor deposition of C 2 H 2 gas at 550°C. We used electro-plated Ni thin film as a catalyst and screen-printed Ag thick film as a cathode. The turn-on field was about 2.55 V /μ m with an emission current density of 10 μ A / cm 2, and electric field was about 4.0 V /μ m with an emission current density of 3 mA/cm2. Fowler-Nordheim plot shows good linear fit, indicating that the emission current of CNTs follows the Fowler-Nordheim behavior. This process is suitable for mass production of CNT field emission display(CNT-FED), because of its merits; low temperature (≤ 550° C ) process, easiness of CNT patterning, non-vacuum process, large area uniformity.

Advanced Stacked Elemental Layer Process for Cu(InGa)Se2 Thin Film Photovoltaic Devices

1996 ◽  
Vol 426 ◽  
Author(s):  
V. Probst ◽  
F. Karg ◽  
J. Rimmasch ◽  
W. Riedl ◽  
W. Stetter ◽  
...  
Keyword(s):  
Thin Film ◽  
Reaction Pathway ◽  
Low Cost ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Large Area ◽  
Flux Agent ◽  
Soda Lime Glass Substrate ◽  
Experimental Findings ◽  
Elemental Layer

AbstractTargeting large area and low cost processing of highly efficient thin film solar modules an advanced stacked elemental layer process for Cu(InGa)Se2 (CIGS) thin films is presented. Key process steps are i) barrier coating of the soda lime glass substrate combined with the addition of a sodium compound to the elemental Cu/In/Ga/Se-precursor stack and ii) rapid thermal processing (RTP) to form the CIGS compound.By this strategy exact impurity control is achieved and the advantageous influence of sodium on device performance and on CIGS film formation is demonstrated unambiguously by means of electrical characterisation, XRD, SEM, TEM and SIMS. Sodium enriched and sodium free precursor stacks were heated to intermediate states (300°C–500°C) of the RTPreaction process. The experiment clearly reveals that on the reaction pathway to the chalcopyrite semiconductor increased amounts of copper-selenide are formed, if sodium is added to the precursor films. TEM-electron diffraction unambiguously identifies the CuSe-phase which is localised at the surface of the forming CIGS-film. These experimental findings propose a sodium assisted quasi liquid growth model for the CIS formation taking into account that sodium promotes the existence of CuSe at higher temperatures and its effect as a flux agent. The model contributes to a better understanding of the observed superior crystal qualitiy for sodium enriched in contrast to sodium free CIGS films.Application of these experimental findings in the technique of the optimized and controlled sodium incorporation significantly improves process reproducibility, CIGS film homogenity over larger substrate areas and shifts the average efficiency of cells and modules to a significantly higher level. This is demonstrated by a 12-cell integrated series connected minimodule with an aperture area of 51 cm2 and a confirmed efficiency of 11.75 %.

Synthesis of MgO Thin Film Deposited on Soda Lime Glass by Sol-Gel Process

2008 ◽  
Vol 569 ◽  
pp. 61-64
Author(s):  
Dae Yong Shin ◽  
Kyung Nam Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Heating Temperature ◽  
Sol Gel ◽  
Soda Lime ◽  
Dissipation Factor ◽  
Preferred Orientation ◽  
Soda Lime Glass ◽  
Sol Gel Process

MgO thin film was deposited on soda lime glass substrate by sol-gel process. MgO thin film with the (200) preferred orientation were prepared by heat-treated at 300~500°C for 10 min. The crystallization, microstructure and electrical properties with various parameters of MgO thin films were investigated. Consequently, it was shows that the (200) preferred orientation of MgO thin film could be obtained as the heating temperature was increased. At heating temperature of 500°C, MgO thin film was composed of columnar crystals with a size of 120 nm. The dielectric constant of the (200) preferred orientation of MgO thin film at 1 kHz without the electric field was 7.2, with a dissipation factor of 4%. When the electric field was increased, the dielectric constant approaches to 7.9 with the dissipation factor of 2.1%. The refractive index of MgO thin film depended on the film thickness. The refractive index of 250 nm thickness was 1.70.

Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe 2 Single Crystals on Low‐Cost Soda‐Lime Glass

2021 ◽  
pp. 2100415
Author(s):  
Zhaoqian Zhang ◽  
Lijie Zhu ◽  
Dan Wang ◽  
Bin Tang ◽  
Pengfei Yang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Low Cost ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Large Area
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