Synthesis and Resistive Switching Characteristics of Ethyl Methacrylate /N, N'-4, 4'-Diphenylmethane-Bismaleimide Copolymer

2013 ◽  
Vol 788 ◽  
pp. 159-163 ◽  
Author(s):  
Yu Ru He ◽  
Pei Bang Dai ◽  
Ji Wen Xu ◽  
Yue Qun Lu ◽  
Hua Wang
Keyword(s):  
Sandwich Structure ◽  
Memory Device ◽  
Current Ratio ◽  
Ethyl Methacrylate ◽  
Ag Electrode ◽  
Ito Electrode ◽  
Film Forming ◽  
Switching Characteristics ◽  
Memory Characteristics ◽  
Switching Threshold Voltage

The Ethyl Methacrylate (EMA)/N, N-4, 4-Diphenylmethane-bismaleimide (BMI) copolymer was synthesized by the conventional free radical polymerization. The resulting copolymer was fully characterized by FTIR, TG, DSC and the film exhibited excellent film-forming property, high thermal and dimensional stability. The devices based on EMA/ BMI copolymer possess a sandwich structure comprising bottom indiumtin oxide (ITO) electrode and top Ag electrode. The as-fabricated device exhibits the nonvolatile rewritable flash type memory characteristics. The ITO/(EMA/BMI copolymer)/Ag memory device also demonstrates ON/OFF-current ratio of about 1 × 102 and lower switching threshold voltage of about 0.98V.

scholarly journals A ZnTe Thin Film Memory Device

1980 ◽  
Vol 7 (1-3) ◽  
pp. 93-96 ◽  
Author(s):  
Marc Burgelman
Keyword(s):  
Thin Film ◽  
Electrical Conduction ◽  
Sandwich Structure ◽  
Memory Device ◽  
Memory Switching ◽  
Frenkel Emission ◽  
Switching Characteristics

Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.

Synthesis of Methyl Methacrylate/Acrylic Acid/N, N’-4, 4’-Diphenylmethane-bismaleimide Copolymer and its Electricity Storage Characteristics

2014 ◽  
Vol 997 ◽  
pp. 221-224
Author(s):  
Yue Qun Lu ◽  
Pei Bang Dai ◽  
Ting Zheng ◽  
Li Li Fan ◽  
Yu Ru He
Keyword(s):  
Acrylic Acid ◽  
Methyl Methacrylate ◽  
Bottom Electrode ◽  
Memory Device ◽  
Current Ratio ◽  
Current Voltage ◽  
Memory Characteristic ◽  
The Fourier Transform ◽  
Storage Characteristics ◽  
Switching Threshold Voltage

Methyl Methacrylate (MMA)/acrylic acid (AA)/N,N’-4,4’-Diphenylmethane-bismaleimide (BMI) copolymer was synthesized by free radical polymerization. The copolymer was characterized by the Fourier Transform Infrared (FTIR), and the memory characteristic of the device was investigated by current-voltage (I-V) test. The structure of the memory device which is based on MMA/AA/BMI copolymer was sandwich, the bottom electrode was indiumtin oxide (ITO) and the top electrode was Al. The ON/OFF current ratio of the ITO/(MMA/AA/BMI copolymer)/Al memory device is ≥1×102 and the switching threshold voltage is about 1.8v.

scholarly journals Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1491
Author(s):  
Lu Wang ◽  
Jinyi Wang ◽  
Dianzhong Wen
Keyword(s):  
Graphene Oxide ◽  
Indium Tin Oxide ◽  
Flash Memory ◽  
Resistance Switching ◽  
Current Ratio ◽  
Reset Voltage ◽  
Egg Albumen ◽  
Switching Characteristics ◽  
Memory Characteristics ◽  
Bipolar Resistance Switching

We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 103. Moreover, the RESET voltage decreases as the GO concentration decreases, which indicates that GO layers with different GO concentrations can be adopted to adjust the ON/OFF current ratio and the RESET voltage. When the GO concentration is 0.5 ωt %, the device can be switched more than 200 times. The retention times of all the devices are longer than 104 s.

scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

Stable resistive switching characteristics of ZrO 2 -based memory device with low-cost

2017 ◽  
Vol 172 ◽  
pp. 26-29 ◽  
Author(s):  
Liping Fu ◽  
Yingtao Li ◽  
Genliang Han ◽  
Xiaoping Gao ◽  
Chuanbing Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Cost ◽  
Memory Device ◽  
Switching Characteristics

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

Highly uniform and reliable resistive switching characteristics of a Ni/WO x /p + -Si memory device

2018 ◽  
Vol 140 ◽  
pp. 51-54 ◽  
Author(s):  
Tae-Hyeon Kim ◽  
Sungjun Kim ◽  
Hyungjin Kim ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Switching Characteristics ◽  
Highly Uniform
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