Temperature Dependent Current–Voltage Characteristics of Iron-Phthalocyanine Thin Films

2009 ◽  
Vol 9 (9) ◽  
pp. 5262-5267 ◽  
Author(s):  
Soumen Samanta ◽  
Ajay Singh ◽  
A. K. Debnath ◽  
D. K. Aswal ◽  
S. K. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Phthalocyanine ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

Oxygen induced hysteretic current-voltage characteristics of iron-phthalocyanine thin films

2008 ◽  
Vol 104 (7) ◽  
pp. 073717 ◽  
Author(s):  
Soumen Samanta ◽  
Ajay Singh ◽  
A. K. Debnath ◽  
D. K. Aswal ◽  
S. K. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Phthalocyanine ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Temperature Dependent ◽  
Sio2 Films ◽  
Breakdown Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nordheim Tunneling

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

scholarly journals A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sachin Yadav ◽  
Vinay Kaushik ◽  
M. P. Saravanan ◽  
R. P. Aloysius ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Synthesis Process ◽  
Phase Slip ◽  
Temperature Dependent ◽  
Theoretical Limit ◽  
Ginzburg Landau ◽  
Current Voltage ◽  
Tin Thin Films ◽  
Current Voltage Characteristics

AbstractDisorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi2 & elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (Ta) and the film thickness. The superconducting critical temperature (Tc) strongly depends on Ta and the maximum Tc obtained from the demonstrated technique is about 4.8 K for the thickness range ~ 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased Ta and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (Ic) from the Ginzburg–Landau theoretical limit varies strongly with the thickness. Finally, the Tc, intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with Ta and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

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