The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition

2012 ◽  
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pp. 5494-5499 ◽  
Author(s):  
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Hyungchul Kim ◽  
Taeyong Park ◽  
Youngbin Ko ◽  
Heeyoung Jeon ◽  
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2011 ◽  
Vol 18 ◽  
pp. 100-106 ◽  
Author(s):  
Xingcun Li ◽  
Qiang Chen ◽  
Lijun Sang ◽  
Lizhen Yang ◽  
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2014 ◽  
Vol 115 (7) ◽  
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Author(s):  
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Hagyoung Choi ◽  
Giyul Ham ◽  
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2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
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The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.


2018 ◽  
Vol 65 (10) ◽  
pp. 4513-4519
Author(s):  
Mei Shen ◽  
Triratna P. Muneshwar ◽  
Kenneth C. Cadien ◽  
Ying Yin Tsui ◽  
Douglas W. Barlage

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