Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents

2015 ◽  
Vol 33 (1) ◽  
pp. 01A113 ◽  
Author(s):  
Kensaku Kanomata ◽  
Hisashi Ohba ◽  
P. Pungboon Pansila ◽  
Bashir Ahmmad ◽  
Shigeru Kubota ◽  
...  
2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.


2018 ◽  
Vol 65 (10) ◽  
pp. 4513-4519
Author(s):  
Mei Shen ◽  
Triratna P. Muneshwar ◽  
Kenneth C. Cadien ◽  
Ying Yin Tsui ◽  
Douglas W. Barlage

Impact ◽  
2020 ◽  
Vol 2020 (5) ◽  
pp. 16-18
Author(s):  
Fumihiko Hirose

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.


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