scholarly journals High-resolution imaging of biotite using focal series exit wavefunction restoration and the graphene mechanical exfoliation method

2015 ◽  
Vol 79 (2) ◽  
pp. 337-344 ◽  
Author(s):  
W. Bower ◽  
W. Head ◽  
G. T. R. Droop ◽  
R. Zan ◽  
R. A. D. Pattrick ◽  
...  
Keyword(s):  
High Resolution ◽  
Structural Information ◽  
Ion Beam ◽  
Single Atom ◽  
Specimen Preparation ◽  
Specimen Thickness ◽  
Mechanical Exfoliation ◽  
Transmission Electron ◽  
Sheet Silicate ◽  
Combination Of Methods

AbstractWe have applied mechanical exfoliation for the preparation of ultra-thin samples of the phyllosilicate mineral biotite. We demonstrate that the 'scotch tape' approach, which was made famous as an early method for production of single-atom-thick graphene, can be used for production of sheet-silicate specimens that are sufficiently thin to allow high-resolution transmission electron microscope (HRTEM) imaging to be achieved successfully while also being free from the specimen preparation artefacts that are often caused by ion-beam milling techniques. Exfoliation of the biotite parallel to the (001) planes has produced layers as thin as two structural TOT units thick (∼2 nm). The minimal specimen thickness enabled not only HRTEM imaging but also the application of subsequent exit wavefunction restoration to reveal the pristine biotite lattice. Exit wavefunction restoration recovers the full complex electron wave from a focal series of HRTEM images, removing the effects of coherent lens aberrations. This combination of methods therefore produces images in which the observed features are readily interpreted to obtain atomic resolution structural information.

Transmission Electron Microscopy of Semiconductor Based Products

1998 ◽  
Vol 523 ◽  
Author(s):  
John Mardinly ◽  
David W. Susnitzky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Size Reduction ◽  
Specimen Preparation ◽  
Specimen Thickness ◽  
Ion Milling ◽  
Feature Size ◽  
Transmission Electron

AbstractThe demand for increasingly higher performance semiconductor products has stimulated the semiconductor industry to respond by producing devices with increasingly complex circuitry, more transistors in less space, more layers of metal, dielectric and interconnects, more interfaces, and a manufacturing process with nearly 1,000 steps. As all device features are shrunk in the quest for higher performance, the role of Transmission Electron Microscopy as a characterization tool takes on a continually increasing importance over older, lower-resolution characterization tools, such as SEM. The Ångstrom scale imaging resolution and nanometer scale chemical analysis and diffraction resolution provided by modem TEM's are particularly well suited for solving materials problems encountered during research, development, production engineering, reliability testing, and failure analysis. A critical enabling technology for the application of TEM to semiconductor based products as the feature size shrinks below a quarter micron is advances in specimen preparation. The traditional 1,000Å thick specimen will be unsatisfactory in a growing number of applications. It can be shown using a simple geometrical model, that the thickness of TEM specimens must shrink as the square root of the feature size reduction. Moreover, the center-targeting of these specimens must improve so that the centertargeting error shrinks linearly with the feature size reduction. To meet these challenges, control of the specimen preparation process will require a new generation of polishing and ion milling tools that make use of high resolution imaging to control the ion milling process. In addition, as the TEM specimen thickness shrinks, the thickness of surface amorphization produced must also be reduced. Gallium focused ion beam systems can produce hundreds of Ångstroms of amorphised surface silicon, an amount which can consume an entire thin specimen. This limitation to FIB milling requires a method of removal of amorphised material that leaves no artifact in the remaining material.

A model for the composite nanostructure of bone suggested by high-resolution transmission electron microscopy

2003 ◽  
Vol 67 (6) ◽  
pp. 1171-1182 ◽  
Author(s):  
B. A. Cressey ◽  
G. Cressey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Preparation Method ◽  
Ion Beam ◽  
Human Bone ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Ancient Bone ◽  
Close Analogue

AbstractWe have imaged the spatially-preserved microtexture of biogenic apatite, retained together with its collagen template, in non-demineralized human bone using high-resolution transmission electron microscopy. Using ion-beam thinning, a specimen preparation method generally employed for inorganic minerals rather than for biological materials, we have imaged a composite nanostructure of bone not previously reported, and we propose a model for this nano-architecture that involves a boxconstruction of apatite plates and apatite sheets. This observation provides a new understanding of bone strength at the nanometre scale and suggests how post mortem enhancement of this texture by recrystallization probably accounts for the durability of ancient bone. Modern sheep bone (a close analogue for recently dead human bone) imaged in the same way also shows evidence of this composite architecture.

In-Situ Ion Milling in the Transmission Electron Microscope (TEM) Outlook to a New Preparation Technique

2001 ◽  
Vol 7 (S2) ◽  
pp. 932-933
Author(s):  
Peter Gnauck ◽  
Claus Burkhardt ◽  
Erich Plies ◽  
Wilfried Nisch
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Specimen Preparation ◽  
Specimen Thickness ◽  
Preparation Technique ◽  
Ion Milling ◽  
Transmission Electron

Recent developments in transmission electron microscopy put high demands on specimen preparation. in general the imaging quality is not limited by the performance of the microscope but by the quality of the specimen. in order to achieve a spatial resolution of 0.1 nm in HRTEM undamaged samples with a thickness below 10 nm are required. in energy filtering analytical electron microscopy (EFTEM), a constant specimen thickness over large areas and very low contamination is needed.Conventional ion-milling techniques for TEM specimen preparation are essentially blind. Thus, it is left to chance whether the specimen detail of interest is suitable for TEM-imaging (many specimen areas are too thick). Another problem is the reaction of the specimen with the atmosphere during the transfer from the preparation stage to the microscope, which makes it very difficult to obtain the clean specimen surfaces that are needed in analytical EFTEM. Especially in high-resolution electron microscopy and electron holography the formation of amorphous oxidation and contamination layers on otherwise crystalline materials may seriously reduce the quality of high resolution images of the crystal structure.

Preparation of Titanium Microgrids for Scanning Transmission Electron Microscopy

1977 ◽  
Vol 35 ◽  
pp. 322-323
Author(s):  
M.L. Collins ◽  
N.W. Parker
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Scanning Transmission Electron Microscopy ◽  
Single Atom ◽  
Specimen Preparation ◽  
Transmission Microscopy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

The ideal supporting microgrid for high resolution scanning transmission electron microscopy should be: 1) made of material of low atomic number, 2) uniformly flat for ease in focusing, 3) resistant to any treatments necessary for cleaning and specimen preparation, and 4) a good electrical and thermal conductor. In the past, microgrid supports have been made of fenestrated plastic films strengthened by carbon or metal coatings. While adequate for most work, they cannot be baked at temperatures greater than 50°C. which may be necessary in some cases to completely eliminate contamination for single atom imaging using the STEM. To provide a reliably non-contaminating substrate support for high resolution scanning transmission microscopy, we have developed a simple technique for the preparation of microgrids of titanium metal. As can be seen in table 1, titanium posesses many attractive features.

High-resolution microscopy of twin boundaries in gold

1987 ◽  
Vol 45 ◽  
pp. 260-261
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
High Resolution ◽  
Specimen Preparation ◽  
Gold Films ◽  
Boundary Area ◽  
Transmission Electron ◽  
Recent Developments ◽  
Tilt Boundaries ◽  
High Resolution Microscopy ◽  
Twist Boundaries

Recent developments in specimen preparation, imaging and image analysis together permit the experimental determination of the atomic structure of certain, simple grain boundaries in metals such as gold. Single crystal, ∼125Å thick, (110) oriented gold films are vapor deposited onto ∼3000Å of epitaxial silver on (110) oriented cut and polished rock salt substrates. Bicrystal gold films are then made by first removing the silver coated substrate and placing in contact two suitably misoriented pieces of the gold film on a gold grid. Controlled heating in a hot stage first produces twist boundaries which then migrate, so reducing the grain boundary area, to give mixed boundaries and finally tilt boundaries perpendicular to the foil. These specimens are well suited to investigation by high resolution transmission electron microscopy.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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