OS15F064 Damage Assessment of Heat Resistant Steels through Electron BackScatter Diffraction Strain Analysis under Creep and Creep-Fatigue Conditions

2011 ◽  
Vol 2011.10 (0) ◽  
pp. _OS15F064--_OS15F064-
Author(s):  
Kazunari Fujiyama ◽  
Hirohisa Kimachi ◽  
Toshiki Tsuboi ◽  
Hiroyuki Hagiwara ◽  
Shotaro Ogino ◽  
...  
Keyword(s):  
Damage Assessment ◽  
Electron Backscatter Diffraction ◽  
Strain Analysis ◽  
Heat Resistant ◽  
Electron Backscatter ◽  
Creep Fatigue ◽  
Backscatter Diffraction ◽  
Heat Resistant Steels

A Review of Strain Analysis Using Electron Backscatter Diffraction

2011 ◽  
Vol 17 (3) ◽  
pp. 316-329 ◽  
Author(s):  
Stuart I. Wright ◽  
Matthew M. Nowell ◽  
David P. Field
Keyword(s):  
Plastic Strain ◽  
Materials Science ◽  
Electron Backscatter Diffraction ◽  
Strain Analysis ◽  
Current State ◽  
Mapping Parameters ◽  
Submicron Scale ◽  
Electron Backscatter ◽  
Ebsd Technique ◽  
Backscatter Diffraction

AbstractSince the automation of the electron backscatter diffraction (EBSD) technique, EBSD systems have become commonplace in microscopy facilities within materials science and geology research laboratories around the world. The acceptance of the technique is primarily due to the capability of EBSD to aid the research scientist in understanding the crystallographic aspects of microstructure. There has been considerable interest in using EBSD to quantify strain at the submicron scale. To apply EBSD to the characterization of strain, it is important to understand what is practically possible and the underlying assumptions and limitations. This work reviews the current state of technology in terms of strain analysis using EBSD. First, the effects of both elastic and plastic strain on individual EBSD patterns will be considered. Second, the use of EBSD maps for characterizing plastic strain will be explored. Both the potential of the technique and its limitations will be discussed along with the sensitivity of various calculation and mapping parameters.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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