G231 Experimental Study on Chemical Vapor Deposited TiN films in tubular reactor

TiN films were ehemical-vapor-deposited on the inner wall of a tubular reactor. Films deposited in the upstream region of the reactor consisted of small and sharp crystals with (111)-preferred orientation or random orientation. On the other hand, films deposited in the downstream region or at lower partial pressure of TiCl4 consisted of columnar crystals with (110)-preferred orientation, having polyhedral shapes on the surface. For the films deposited under different conditions at different axial positions, relationships were investigated among the temperature, the calculated concentrations on the substrate, and the degree of preferred orientation of the films. As a result, it was shown that formation of films with (110)-preferred orientation is related to the conditions of high temperature and low partial pressure of TiCl4. Films deposited at the higher gas flow rate had lower degrees of (110)-preferred orientation. Decrease in partial pressure of TiCl4 along the axial direction in the reactor was calculated to be smaller at higher gas flow rate, and provided suitable conditions for deposition of films having small and sharp crystals.

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Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films: Aspects of Process Integration

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1500 ◽

2002 ◽

Vol 41 (Part 1, No. 3A) ◽

pp. 1500-1506 ◽

Cited By ~ 5

Author(s):

Young Suk Kim ◽

Hirotaka Hamamura ◽

Yukihiro Shimogaki

Keyword(s):

Process Integration ◽

Chemical Vapor ◽

Tin Films ◽

Chemical Vapor Deposited

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A Comparative Study of Film Properties of Chemical Vapor Deposited TiN Films as Diffusion Barriers for Cu Metallization

Journal of The Electrochemical Society ◽

10.1149/1.1391785 ◽

1999 ◽

Vol 146 (4) ◽

pp. 1455-1460 ◽

Cited By ~ 41

Author(s):

Soo‐Hyun Kim ◽

Deuk‐Seok Chung ◽

Ki‐Chul Park ◽

Ki‐Bum Kim ◽

Seok‐Hong Min

Keyword(s):

Comparative Study ◽

Chemical Vapor ◽

Diffusion Barriers ◽

Film Properties ◽

Tin Films ◽

Cu Metallization ◽

Chemical Vapor Deposited

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Surface Protrusions of Chemical Vapor Deposited TiN Films Caused by Cu Contamination of Silicon Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l607 ◽

1998 ◽

Vol 37 (Part 2, No. 5B) ◽

pp. L607-L609 ◽

Cited By ~ 1

Author(s):

Degang Cheng ◽

Yoshifumi Ogawa ◽

Hirotaka Hamamura ◽

Hiroaki Shirakawa ◽

Toshio Osawa ◽

...

Keyword(s):

Chemical Vapor ◽

Silicon Substrates ◽

Tin Films ◽

Chemical Vapor Deposited ◽

Cu Contamination

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Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581777 ◽

1999 ◽

Vol 17 (4) ◽

pp. 2389-2393 ◽

Cited By ~ 6

Author(s):

J. C. Hu ◽

T. C. Chang ◽

L. J. Chen ◽

Y. L. Yang ◽

S. Y. Chen ◽

...

Keyword(s):

Chemical Vapor ◽

Diffusion Barriers ◽

Tin Films ◽

Chemical Vapor Deposited ◽

Al Metallization

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Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100097466 ◽

1981 ◽

Vol 39 ◽

pp. 162-163

Author(s):

L. J. Chen ◽

L. S. Hung ◽

J. W. Mayer

Keyword(s):

Ion Beam ◽

Chemical Vapor ◽

Interfacial Reactions ◽

Practical Applications ◽

Microelectronic Devices ◽

Recent Emergence ◽

Chemical Vapor Deposited ◽

Atomic Mixing ◽

Silicon Interface ◽

Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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Metal Microstructures in Advanced CMOS Devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164258 ◽

1996 ◽

Vol 54 ◽

pp. 358-359

Author(s):

L. M. Gignac ◽

K. P. Rodbell

Keyword(s):

Grain Boundaries ◽

Semiconductor Device ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Metal Films ◽

Thin Metal ◽

Electrical Performance ◽

Thin Metal Films ◽

Chemical Vapor Deposited ◽

Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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