Colloidal nanocrystals for telecommunications. Complete coverage of the low-loss fiber windows by mercury telluride quantum dot

2000 ◽  
Vol 72 (1-2) ◽  
pp. 295-307 ◽  
Author(s):  
M. T. Harrison ◽  
S. V. Kershaw ◽  
M. G. Burt ◽  
A. L. Rogach ◽  
A. Kornowski ◽  
...  
Keyword(s):  
Optical Networks ◽  
Optical Fibers ◽  
Glass Fibers ◽  
Semiconductor Nanocrystals ◽  
High Capacity ◽  
Telecommunications Industry ◽  
Network Capacity ◽  
Optical Amplifier ◽  
Complete Coverage ◽  
Erbium Doped Fiber Amplifier

Optical fibers have revolutionized the telecommunications industry to such an extent that the network capacity available today was unthinkable 20 years ago. Even so, with the advent of the datawave, and the exponential increase of network traffic predicted to continue indefinitely, the generation of bandwidth remains a challenge. One of the major limitations to the implementation of future high-capacity, ultra-broadband optical networks is the expansion of the fiber bandwidth beyond that available from the current state-of-the-art signal amplification device--the erbium-doped fiber amplifier (EDFA). Although there is currently a large effort to expand the flat-gain bandwidth of the EDFA, most of these efforts involve sophisticated engineering, exotic glass fibers, or multicomponent cascaded systems. In a radically different approach, we are attempting to use the unique properties of semiconductor nanocrystals, or quantum dots, as "designer atoms" in order to produce an ultra-broadband optical amplifier with complete coverage of the telecommunications wavelengths. In this paper we review the synthesis of thiol-stabilized mercury chalcogenide nanocrystals via an aqueous colloidal route, which demonstrate extremely intense photoluminescence all the way across the spectral region of interest, i.e., from 1000 to over 1700 nm.

scholarly journals Realization of a Long-haul Optical Link with Erbium Doped Fiber Amplifier

2018 ◽  
Vol 11 (2) ◽  
pp. 44-49
Author(s):  
Tomáš Huszaník ◽  
Ján Turán ◽  
Ľuboš Ovseník
Keyword(s):  
Optical Networks ◽  
Wavelength Division Multiplexing ◽  
Communication Systems ◽  
High Speed ◽  
High Capacity ◽  
Fiber Amplifier ◽  
Optical Signal ◽  
Long Distance ◽  
Erbium Doped Fiber Amplifier ◽  
Erbium Doped

Abstract The need for high capacity and bandwidth in broadband communication systems increased rapidly in a few past years. Optical fiber is now the major transmission medium for fast and reliable communication replacing the old copper-based connections. However, with the deployment of optical networks, number of problems arise. The main problem of optical networks is the amplification in the long-distance transmission. Erbium doped fiber amplifier (EDFA) is the leading technology in the field of optical amplifiers. It uses erbium doped fiber to amplify optical signal. The importance of amplification in optical domain is relevant in long-haul and high-speed transmission systems. In this paper the study of the EDFA is presented. Based on an analytical study, the simulation model of the EDFA is created. The main aim is to determine the optimal parameters of the EDFA for a long-haul 16-channel DWDM (Dense Wavelength Division Multiplexing) system. The performance of the proposed DWDM system is mathematically analyzed using BER (Bit Error Rate) and Q factor.

OPTICAL AMPLIFIER WITH FLAT-GAIN AND WIDEBAND OPERATION UTILIZING HIGHLY CONCENTRATED ERBIUM-DOPED FIBERS

2012 ◽  
Vol 21 (01) ◽  
pp. 1250005
Author(s):  
B. A. HAMIDA ◽  
X. S. CHENG ◽  
A. W. NAJI ◽  
H. AHMAD ◽  
W. AL-KHATEEB ◽  
...  
Keyword(s):  
Optical Networks ◽  
Wavelength Division Multiplexing ◽  
Noise Figure ◽  
Wavelength Region ◽  
Optical Amplifier ◽  
Gain Spectrum ◽  
Double Pass ◽  
Erbium Doped Fiber Amplifier ◽  
Erbium Doped ◽  
Flat Gain

In this paper, we proposed a flat-gain and wide-band erbium doped fiber amplifier (EDFA) using two chirped fiber Bragg grating (CFBG) in serial configuration for double-pass operation. The amplifier consists of two sections of Erbium-doped fiber (EDF) operating in C-band and L-band respectively. A CFBG is used in each section to reflect the amplified signal back to the active area so that the overall gain spectrum can be enhanced and flattened. It is also observed that the gain of the amplifier produces a relatively higher gain with the Bismuth-based EDF (Bi-EDF) in the first stage compared to that of silica-based EDF (Si-EDF), especially in a longer wavelength region. The small signal gain of more than 19 dB is obtained within a wavelength region from 1545 to 1605 nm by the use of Bi-EDF with a small noise figure penalty. With a Si-EDF, the flat gain spectrum is observed within a wavelength region ranging from 1535 nm to 1605 nm with a gain variation of less than 2 dB at input signal of 0 dBm. This shows that the proposed serial double-pass amplifier may find its broad applications in wavelength division multiplexing long-haul systems as well as local optical networks.

Elastic Optical Networks

2021 ◽  
pp. 537-574
Author(s):  
Debasish Datta
Keyword(s):  
Optical Networks ◽  
Optical Fibers ◽  
Network Capacity ◽  
Wdm Networks ◽  
Bandwidth Utilization ◽  
Waveform Generation ◽  
Frequency Grid ◽  
Effective Network ◽  
Set Up ◽  
Arbitrary Waveform

In WDM networks using a fixed frequency grid, transmission rates can vary for different connections, leading to inefficient bandwidth utilization in optical fibers with lower-rate connections using wide frequency slots. In elastic optical networks (EONs), the frequency grid is made flexible, thereby improving the effective network capacity. A flexible frequency grid consists of smaller frequency slots, and a transmitting node can use multiple slots using suitable modulation techniques, such as optical OFDM, Nyquist-WDM and optical arbitrary waveform generation (OAWG). However, this requires bandwidth-variable transceivers (BVTs) and other devices to set up variable-rate connections. First we discuss the design challenges in EONs and describe the evolving technologies for the network elements. Then we present some offline (LP-based and heuristic) design methodologies for EONs to carry out routing and spectral allocation (RSA) for the required connections. Finally, we present some online fragmentation-aware RSA schemes for the operational EONs. (146 words)

Investigations of Different Amplifiers in 16 × 40 Gb/S WDM System

2019 ◽  
Vol 40 (4) ◽  
pp. 341-346
Author(s):  
Kulwinder Singh ◽  
Karan Goel ◽  
Kamaljit Singh Bhatia ◽  
Hardeep Singh Ryait
Keyword(s):  
Wavelength Division Multiplexing ◽  
Fiber Amplifier ◽  
Optical Amplifier ◽  
Fiber Amplifiers ◽  
Erbium Doped Fiber Amplifier ◽  
Wavelength Division ◽  
Transmission Distance ◽  
Erbium Doped ◽  
Eye Opening ◽  
Eye Closure

Abstract Different fiber amplifiers such as semiconductor optical amplifier, erbium-doped fiber amplifier and erbium ytterbium-co-doped fiber amplifier (EYCDFA) are investigated for 16×40 GB/s wavelength division multiplexing system. Various performance parameters including Q-factor, bit error rate, jitter, eye opening and eye closure are observed and analyzed. It is reported that EYCDFA is a better choice among the tested amplifiers. The proposed system is also investigated in terms of transmission distance.

scholarly journals Phase-Separated Alumina–Silica Glass-Based Erbium-Doped Fibers for Optical Amplifier: Material and Optical Characterization along with Amplification Properties

Fibers ◽  
2018 ◽  
Vol 6 (3) ◽  
pp. 67 ◽  
Author(s):  
Mukul Paul ◽  
Alexander Kir’yanov ◽  
Yuri Barmenkov ◽  
Mrinmay Pal ◽  
Randall Youngman ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Silica Glass ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Optical Amplifier ◽  
Inhomogeneous Broadening ◽  
Coordination Numbers ◽  
Erbium Doped ◽  
Doped Fibers ◽  
Solution Doping

In this paper, we present phase-separated alumina–silica glass-based Er3+-doped optical fibers made by a modified chemical vapor deposition (MCVD) process in combination with a solution doping (SD) technique. The fibers exhibited better optical performance than other silica-based host glasses—both in terms of spectral broadening and flattening of the gain spectra in the C band (1530–1560 nm) region—as well as an improved lifetime. These phase-separated erbium-doped fibers (EDF) promoted longer Er–O bond lengths and also hexa- and penta-coordinated Al3+ ions instead of the fourfold coordination found in non-phase-separated EDF. It was observed that the higher coordination numbers of Er3+ and Al3+ ions in phase-separated glass hosts led to more homogeneous and inhomogeneous broadening, resulting in better flatness of the gain spectrum with 1.2 dB more gain compared to the non-phase-separated EDF.

scholarly journals Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (23) ◽  
pp. 11096
Author(s):  
Joan Manel Ramírez ◽  
Pierre Fanneau de la Horie ◽  
Jean-Guy Provost ◽  
Stéphane Malhouitre ◽  
Delphine Néel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Silicon On Insulator ◽  
Total Power ◽  
Multiple Quantum ◽  
Total Power Consumption ◽  
On Chip

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

scholarly journals Excellent Mechanical Properties of the Silicate Glasses Modified by CeO2 and TiO2: A New Choice for High-Strength and High-Modulus Glass Fibers

2021 ◽  
Author(s):  
Chao Chen ◽  
Qingong Zhu ◽  
Huanping Wang ◽  
Feifei Huang ◽  
Qinghua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Silicate Glass ◽  
Optical Fibers ◽  
Bending Strength ◽  
Glass Fibers ◽  
High Strength ◽  
Maximum Level ◽  
Compression Modulus ◽  
Co Doping ◽  
Optimum Approach

Abstract As is well known, silicate glass has a stable glass-forming region and mature drawing processes into fibers. In this study, to obtain enhanced mechanical properties, glasses with a composition of SiO2-Al2O3-MgO-CaO-B2O3-Fe2O3 were synthesized using TiO2 and CeO2. When the amount of TiO2 and CeO2 is less than 2 wt%, the mechanical properties increase with increases in the TiO2 and CeO2. However, as the amount of TiO2 and CeO2 increases from 2 to 3.5 wt%, the mechanical properties decrease. Co-doping with 1 wt% TiO2 and 1 wt% CeO2 was found to be the optimum approach, with a density, bending strength, compression strength, and compression modulus of 2.626 g/cm3, 108.36 MPa, 240.18 MPa, and 115.03 GPa, respectively. The optical band gap and Raman spectroscopy proved that, as long as the content of oxygen bonds reaches the maximum level, a kind of best structural stability and mechanical properties will be achieved. Hence, this type of high-strength silicate glass can be used in optical fibers for military defense, wind power generation, and transportation.

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