Efficient Polarization Rotator for Thick-film Si3N4 Integrated Photonics Platform

2021 ◽  
Author(s):  
Anton Stroganov ◽  
Mariam Aamer ◽  
Antoine Brimont ◽  
Ariane Jacquemin ◽  
Fingal Persoud ◽  
...  
2014 ◽  
Vol 22 (9) ◽  
pp. 11167 ◽  
Author(s):  
Wesley D. Sacher ◽  
Ying Huang ◽  
Liang Ding ◽  
Tymon Barwicz ◽  
Jared C. Mikkelsen ◽  
...  

Author(s):  
Mengting Si ◽  
Wang Chengli ◽  
Can Yang ◽  
Wei Peng ◽  
Lixing You ◽  
...  

Abstract Lithium niobate (LN) exhibits outstanding properties in various application of photonics, electronics, and optoelectronics, showing potentials in integration. Due to the directional dependence of LN tensor properties, optical elements made up by LN favor the type of LN substrate. To introduce high-performance superconducting nanowire single-photon detectors to LN-integrated photonics chips, superconducting NbN thin films with thicknesses from 3 to 50 nm were deposited on X-cut, Y-cut, and Z-cut LN substrates using magnetron sputtering at room temperature. The different thickness dependencies of Tc, δTc, and residual resistance ratios are observed in NbN thin films on different LN substrates. NbN thin films on X-cut and Y-cut LN substrates are polycrystalline with a transition temperature (Tc) of ~6 K for a 6-nm-thick film. While NbN thin films are epitaxially textured on Z-cut LN substrates with Tc of 11.5 K for a 6-nm-thick film. NbN-SNSPD on X-cut LN substrates shows a weak saturation trend of its system detection efficiency; however, the performance of NbN-SNSPD on Z-cut LN substrates is limited. We evaluated the selection of cuts and concluded that X-cut and Y-cut LN are more suitable to be a platform of integrated LN photonic chips from the aspect of NbN-SNSPD. This study helps fabricate high-performance SNSPDs on fully integrated photonics chips on LN substrates.


Author(s):  
S. Khadpe ◽  
R. Faryniak

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.


2011 ◽  
Vol 131 (7) ◽  
pp. 484-489 ◽  
Author(s):  
Shinya Okazaki ◽  
Asako Takeuchi ◽  
Akihiro Takeshima ◽  
Makoto Sonehara ◽  
Toshiro Sato ◽  
...  
Keyword(s):  

1977 ◽  
Vol 5 (1) ◽  
pp. 6-28 ◽  
Author(s):  
A. L. Browne

Abstract An analytical tool is presented for the prediction of the effects of changes in tread pattern design on thick film wet traction performance. Results are reported for studies in which the analysis, implemented on a digital computer, was used to determine the effect of different tread geometry features, among these being the number, width, and lateral spacing of longitudinal grooves and the angle of zigzags in longitudinal grooves, on thick film wet traction. These results are shown to be in good agreement with experimental data appearing in the literature and are used to formulate guidelines for tread groove network design practice.


Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.


Author(s):  
Bhanu Sood ◽  
Diganta Das ◽  
Michael H. Azarian ◽  
Michael Pecht

Abstract Negative resistance drift in thick film chip resistors in high temperature and high humidity application conditions was investigated. This paper reports on the investigation of possible causes including formation of current leakage paths on the printed circuit board, delamination between the resistor protective coating and laser trim, and the possibility of silver migration or copper dendrite formation. Analysis was performed on a set of circuit boards exhibiting failures due to this phenomenon. Electrical tests after mechanical and chemical modifications showed that the drift was most likely caused by moisture ingress that created a conductive path across the laser trim.


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