scholarly journals Method for characterization of Si waveguide propagation loss

2013 ◽  
Vol 21 (5) ◽  
pp. 5391 ◽  
Author(s):  
Michele Moresco ◽  
Marco Romagnoli ◽  
Stefano Boscolo ◽  
Michele Midrio ◽  
Matteo Cherchi ◽  
...  
2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Bilal Aghoutane ◽  
Mohammed El Ghzaoui ◽  
Hanan El Faylali

AbstractThe aim of this work consists in characterizing the Terahertz (THz) propagation channel in an indoor environment, in order to propose a channel model for THz bands. We first described a propagation loss model by taking into account the attenuation of the channel as a function of distance and frequency. The impulse response of the channel is then described by a set of rays, characterized by their amplitude, their delay and their phase. Apart from the frequency selective nature, path loss in THz band is also an others issue associated with THz communication systems. This work based on the conventional Saleh-Valenzuela (SV) model which is intended for indoor scenarios. In this paper, we have introduced random variables as Line of sight (LOS) component, and then merging it with the SV channel model to adopt it to the THz context. From simulation, we noted an important effect when the distance between the transmitter and the receiver change. This effect produces variations in frequency loss. The simulations carried out from this model show that to enhance the performance of THz system it is recommended to transmit information over transmission windows instead over the whole band.


2002 ◽  
Vol 748 ◽  
Author(s):  
A. Petraru ◽  
J. Schubert ◽  
M. Schmid ◽  
O. Trithaveesak ◽  
Ch. Buchal

ABSTRACTThe optical and electro-optical properties of epitaxially grown thin films of ferroelectric BaTiO3 on MgO substrates have been established and high quality Mach-Zehnder waveguide modulators have been demonstrated. As a next step towards the integration of ferroelectric thin films on different substrates, we have modified the growth conditions by lowering the growth temperature to study polycrystalline, but still highly transparent BaTiO3 (BTO) films. Polycrystalline BTO on MgO substrates has been grown by pulsed laser deposition (PLD). The growth temperature was reduced from 800 °C to 400 °C at an oxygen pressure of 2×10-3 mbar. Although polycrystalline, the BTO is still birefringent with no= 2.32 and ne = 2.30. Ridge waveguides have been formed by ion beam etching. The estimated waveguide propagation loss is 4 dB/cm at 633 nm. Electro-optic Mach-Zehnder modulators have been realized. Using 3 mm long electrodes with a spacing of 10 μm, a Vπ voltage of 14 V was obtained at 633 nm wavelength. This is half of the observed effective electro-optic coefficient measured at epitaxial BTO films. At 1.5 μm wavelength similar results were observed.


1987 ◽  
Vol 12 (12) ◽  
pp. 1047 ◽  
Author(s):  
R. Arsenault ◽  
D. Gregoris ◽  
S. Woolven ◽  
V. M. Ristic

2008 ◽  
Vol 47 (5) ◽  
pp. 4372-4374 ◽  
Author(s):  
Seongwook Lee ◽  
Kyu-Chil Park ◽  
Jong Rak Yoon ◽  
En Kyu Nam ◽  
Jae-Yong Choi ◽  
...  

1989 ◽  
Vol 152 ◽  
Author(s):  
Uma Ramabadran ◽  
Gregory N. De Brabander ◽  
Joseph T. Boyd ◽  
Howard E. Jackson ◽  
S. Sriram

ABSTRACTRapid thermal annealing has been used to initiate diffusion of Ti in LiNbO3 for the fabrication of optical waveguides. The sample with the most rapid initial ramp of temperature to 875 C was found to have the lowest propagation loss of 1 dB/cm. In order to more fully understand these channel waveguides, we have utilized Raman microprobe spectroscopy. Preliminary results suggest that the presence of the Ti in the LiNbO3 lattice dramatically alters the Raman response.


Author(s):  
Masatoshi TOKUSHIMA ◽  
Jun Ushida ◽  
Takahiro Nakamura

Abstract Accurate propagation loss characterization of silicon waveguides is increasingly demanded for silicon-photonics-(Si-Ph) applications with high-power continuous-wave-(CW) light sources. We report on nonlinear loss parameters of silicon wire waveguides for 1.31-μm-wavelength CW light extracted from transmission data measured for different lengths and polarizations. Such parameters were, so far, unavailable, although they are required for accurately modeling Si-Ph optical circuits. More-than-ten-times enhancement of two-photon absorption from prior results for short pulse light was observed at power densities ranging up to 4.7×1011 W/m2 while free carrier absorption was suppressed. We estimate the nonlinear loss of the waveguide using the parameter values obtained


Author(s):  
Pieter Neutens ◽  
Monika Rutowska ◽  
Willem Van Roy ◽  
Roelof Jansen ◽  
Federico Buja ◽  
...  

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