Large Area Microwave Plasma Source Arrays for Ion-Assisted Sputtering of DLC and Surface Modification

2021 ◽  
Author(s):  
Alexander Welsh ◽  
Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7212
Author(s):  
Helena Nowakowska ◽  
Dariusz Czylkowski ◽  
Bartosz Hrycak ◽  
Mariusz Jasiński

A new type of microwave plasma source is presented in which plasma at atmospheric pressure is generated inside a quartz rectangular flat box placed in a stripline supplied by a 2.45 GHz coaxial line. The plasma has a sheet shape and is designed for surface modification. Electric field and power flux distributions, tuning characteristics, and power characteristics (ratios of radiated, absorbed, and entering power) are numerically studied for three configurations: open, semi-closed, and closed. The calculations show that near-zero radiation reduction is possible only for the closed configuration, while the ratio of radiated power to entering power is always greater than 30% for the other configurations. The moving plunger is not sufficient for the ratio of reflected to incident power to fall below 20% for both the closed and open configurations. This is possible for the semi-closed configuration, but then the radiated power is the highest. The experiment shows that for the same entering power, the plasma volume is largest for the closed configuration and smallest for the open configuration, which we attribute to the difference in radiated power. The plasma generated using the closed stripline configuration has a larger volume than plasma generated using the rectangular waveguide.


2002 ◽  
Vol 715 ◽  
Author(s):  
Wim Soppe ◽  
Camile Devilee ◽  
Sacha Schiermeier ◽  
Harry Donker ◽  
J.K. Rath

AbstractThe deposition of micro-crystalline silicon by means of PECVD with a new linear microwave plasma source is investigated. This plasma source has successfully been introduced in the large scale production of multi-crystalline Si solar cells for the deposition of passivating silicon nitride layers. Advantages of this linear plasma source are the high deposition rates and the large area (up to 80 cm width, no length limitations) on which a homogeneous deposition can be achieved. Since this source has not been applied for deposition of micro-crystalline silicon before, we explored a large parameter space (substrate temperature, pressure, MW-power, gas flow rates), in order to find optimum growth conditions. It is observed that with this microwave source it is possible to grow micro-crystalline layers at significantly higher silane/hydrogen ratios and higher deposition rates than for conventional RF PECVD. In this paper, structural properties of the silicon layers, as investigated by Raman and FTIR spectroscopy, XRD and SEM measurements are discussed.


Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2418 ◽  
Author(s):  
Dariusz Czylkowski ◽  
Bartosz Hrycak ◽  
Andrzej Sikora ◽  
Magdalena Moczała-Dusanowska ◽  
Mirosław Dors ◽  
...  

The specific properties of an atmospheric pressure plasma make it an attractive tool for the surface treatment of various materials. With this in mind, this paper presents the results of experimental investigations of a polycarbonate (PC) material surface modification using this new type of argon microwave (2.45 GHz) plasma source. The uniqueness of the new plasma source lies in the shape of the generated plasma—in contrast to other microwave plasma sources, which usually provide a plasma in the form of a flame or column, the new ones provides a plasma in the shape of a regular plasma sheet. The influence of the absorbed microwave power and the number of scans on the changes of the wettability and morphological and mechanical properties of the plasma-treated PC samples was investigated. The mechanical properties and changes in roughness of the samples were measured by the use of atomic force microscopy (AFM). The wettability of the plasma-modified samples was tested by measuring the water contact angle. In order to confirm the plasma effect, each of the above-mentioned measurements was performed before and after plasma treatment. All experimental tests were performed with an argon of flow rate up to 20 L/min and the absorbed microwave power ranged from 300 to 850 W. The results prove the capability of the new atmospheric pressure plasma type in modifying the morphological and mechanical properties of PC surfaces for industrial applications.


RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 9955-9963
Author(s):  
Yanjing Liu ◽  
Jiawei He ◽  
Bing Zhang ◽  
Huacheng Zhu ◽  
Yang Yang ◽  
...  

Microwave enabled air plasma was boosted by a carbon fiber cloth (CFC) and used for the high-efficiency surface modification of the CFC, yielding CFCs with tunable contents of oxygen and each O-containing group.


2021 ◽  
Vol 116 ◽  
pp. 108394
Author(s):  
Justas Zalieckas ◽  
Paulius Pobedinskas ◽  
Martin Møller Greve ◽  
Kristoffer Eikehaug ◽  
Ken Haenen ◽  
...  

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath


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