The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell

2021 ◽  
Vol 11 (1) ◽  
pp. 173-181
Author(s):  
Dadan Hamdani ◽  
Soni Prayogi ◽  
Yoyok Cahyono ◽  
Gatut Yudoyono ◽  
Darminto Darminto
Keyword(s):  
Experimental Data ◽  
Solar Cell ◽  
Electric Field Distribution ◽  
Energy Band Diagram ◽  
Band Gap Energy ◽  
Window Layer ◽  
Hole Density ◽  
Cell Structures ◽  
P Type ◽  
Good Agreement

In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Cell B). Using well-practiced AFORS-HET software, performances of Cell A and Cell B structures are evaluated and compared to experimental data. A good agreement between AFORS-HET modelling and experimental data was obtained for Cell A (error = 1.02%) and Cell B (error = 0.07%), respectively. The effects of dopant concentrations of the p-type and n-type were examined with respect to cell B for better performance by analysing the energy band diagram, the electric field distribution, the trapped hole density, the light J-V characteristics, and the external quantum efficiency. The simulated results of an optimised Cell B showed that the highest efficiency of 8.81% (VOC = 1042 mV, JSC = 10.08 mA/cm2, FF = 83.85%) has been obtained for the optimum dopant values of NA = 1.0 x 1019 cm-3 and ND = 1.0 x 1019 cm-3, respectively. A comparison between experimental data and simulation results for Cell B showed that the conversion efficiency can be enhanced from 5.61% to 8.81%, using the optimized values

Optimization of Cu(In,Ga)Se2 Solar Cell and its Comparative Performance Analysis for Employing Different Buffer and Window Layers Through Numerical Simulation and Analysis Using SCAPS-1D

2020 ◽  
Author(s):  
Meah Imtiaz Zulkarnain ◽  
Nazmul Islam
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Buffer Layers ◽  
Window Layer ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Cigs Solar Cell ◽  
Cell Structures

Abstract In this research, a numerical simulation and analysis of the second generation thin film solar cell Copper Indium Gallium diselenide, Cu(In,Ga)Se2 or, CIGS, is conducted in order to optimize its performance and compare among the cells using different materials for buffer and window layers. The one-dimensional solar cell simulation program SCAPS-1D (Solar Cell Capacitance Simulator) is used for the simulation and analysis purpose. The effects of variation of bandgap, concentration and thickness of the p-type CIGS absorber layer on the efficiency of CIGS solar cell are investigated. The change in CIGS solar cell efficiency with change in temperature is studied, too. Two different buffer layers namely CdS and In2S3 are considered for the simulation of the CIGS solar cell. The thickness of the buffer layer, its bandgap and concentration are taken into consideration for optimization. As for the window layer, ZnO and SnO2 are employed for the numerical simulation. The thickness of the window layer is varied and its effect on the efficiency of the solar cell is investigated. The open-circuit voltage, short-circuit current density, fill factor and quantum efficiency of the CIGS solar cell are observed from the SCAPS simulation besides the solar cell efficiency. A comparison among the different CIGS cell structures employing different buffer layers and window layers is performed in terms of efficiency and other essential parameters as mentioned above. The solar cell performances of the structures explored in this work were also put in comparison against some laboratory research cell output. The simulation result shows a possible better performance for all the simulated CIGS cell structures compared to the experimental results. In2S3 appears to increase efficiency and thus poses a great potential for non-toxic CIGS solar cell. Though CIGS absorber layer requires more thickness for desired output, successful application of much thinner SnO2 replacing ZnO buffer layer paves the way to less thicker CIGS thin film solar cell.

Drift velocity of holes in germanium and silicon

1979 ◽  
Vol 57 (8) ◽  
pp. 1233-1238 ◽  
Author(s):  
H. Nakagawa ◽  
S. Zukotynski
Keyword(s):  
Experimental Data ◽  
Drift Velocity ◽  
Coupling Constants ◽  
Phonon Coupling ◽  
Key Factor ◽  
Maxwellian Distribution Function ◽  
Valence Bands ◽  
P Type ◽  
Theoretical Results ◽  
Good Agreement

The displaced Maxwellian distribution function as it applies to semiconductors with lattice limited scattering is discussed. It is shown that good agreement between theoretical results and experimental data for the drift velocity can be obtained if the phonon coupling constants are lowered somewhat from their correct values. Calculations are presented for p-type germanium and silicon and it is shown that the key factor that must be considered in both materials is the non-parabolicity of the valence bands.

Optoelectronic Properties of Thin Amorphous and Micro-Crystalline p-Type Films Developed for Amorphous Silicon-Based Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Winz ◽  
B. Rech ◽  
T. H. Eickhoff ◽  
C. Beneking ◽  
C. M. Fortmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Glass Substrates ◽  
Cell Structures ◽  
Silicon Carbon ◽  
P Type

AbstractVIIF-PECVD at 110 MI-z was used to deposit micro-crystalline p-layers on glass substrates for detailed analysis and onto ZnO coated substrates for incorporation into p-i-n solar cell structures. Solar cell and film analysis confirmed that the films incorporated into the solar cells contained significant crystalline silicon volume fractions despite being only 30 nm thick. The p-i-n solar cells employing a micro-crystalline silicon p-layer deposited on ZnO coated substrates had series resistances, fill factors and Voc similar to those of the reference solar cells deposited onto SnO2 coated substrates and having optimized amorphous silicon-carbon p-layers. The short circuit current of the micro-crystalline p-layer case was 10 percent lower than that of the reference cell indicating that further optimization is required.

Wide bandgap p-type window layer prepared by trimethylboron doping at high temperature for a-Si:H superstrate solar cell

2012 ◽  
Vol 358 (23) ◽  
pp. 3243-3247 ◽  
Author(s):  
Baojun Yan ◽  
Lei Zhao ◽  
Bending Zhao ◽  
Jingwei Chen ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Wide Bandgap ◽  
Window Layer ◽  
P Type

Synthesis of Novel P-Type Nanocrystalline Si Prepared from SiH2Cl2and SiCl4for Window Layer of Thin Film Si Solar Cell

2004 ◽  
Vol 43 (9A) ◽  
pp. 5960-5966 ◽  
Author(s):  
Yoshie Ikeda ◽  
Tetsuji Ito ◽  
Yali Li ◽  
Michiaki Yamazaki ◽  
Yasuhiro Hasegawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Window Layer ◽  
Si Solar Cell ◽  
P Type ◽  
Nanocrystalline Si

Photoluminescence Kinetics Model of P-Type GaAs:Nd

1996 ◽  
Vol 422 ◽  
Author(s):  
U. K. Saha ◽  
H. J. Lozykowski
Keyword(s):  
Experimental Data ◽  
Energy Transfer ◽  
Rare Earth ◽  
Excitation Power ◽  
Host Lattice ◽  
The Core ◽  
Type Semiconductor ◽  
P Type ◽  
Kinetics Of ◽  
Good Agreement

AbstractIn this work we have developed a model for the kinetics of the energy transfer from the host lattice to the core states of rare earth (RE) centers. We have derived a set of kinetics differential equations of RE luminescence in p-type semiconductor. Numerically computed rise and decay time of RE luminescence as a function of excitation power shows good agreement with the experimental data obtained for p-type GaAs:Nd.

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