Wide bandgap p-type window layer prepared by trimethylboron doping at high temperature for a-Si:H superstrate solar cell

2012 ◽  
Vol 358 (23) ◽  
pp. 3243-3247 ◽  
Author(s):  
Baojun Yan ◽  
Lei Zhao ◽  
Bending Zhao ◽  
Jingwei Chen ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Wide Bandgap ◽  
Window Layer ◽  
P Type

scholarly journals Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication

2009 ◽  
Vol 156-158 ◽  
pp. 387-393 ◽  
Author(s):  
Jasmin Hofstetter ◽  
Jean F. Lelièvre ◽  
Carlos del Cañizo ◽  
Antonio Luque
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Silicon Solar Cell ◽  
Iron Concentration ◽  
Electron Lifetime ◽  
Slow Cooling ◽  
Metal Impurities ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
P Type

The eect of slow cooling after dierent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering eect.

The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell

2021 ◽  
Vol 11 (1) ◽  
pp. 173-181
Author(s):  
Dadan Hamdani ◽  
Soni Prayogi ◽  
Yoyok Cahyono ◽  
Gatut Yudoyono ◽  
Darminto Darminto
Keyword(s):  
Experimental Data ◽  
Solar Cell ◽  
Electric Field Distribution ◽  
Energy Band Diagram ◽  
Band Gap Energy ◽  
Window Layer ◽  
Hole Density ◽  
Cell Structures ◽  
P Type ◽  
Good Agreement

In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Cell B). Using well-practiced AFORS-HET software, performances of Cell A and Cell B structures are evaluated and compared to experimental data. A good agreement between AFORS-HET modelling and experimental data was obtained for Cell A (error = 1.02%) and Cell B (error = 0.07%), respectively. The effects of dopant concentrations of the p-type and n-type were examined with respect to cell B for better performance by analysing the energy band diagram, the electric field distribution, the trapped hole density, the light J-V characteristics, and the external quantum efficiency. The simulated results of an optimised Cell B showed that the highest efficiency of 8.81% (VOC = 1042 mV, JSC = 10.08 mA/cm2, FF = 83.85%) has been obtained for the optimum dopant values of NA = 1.0 x 1019 cm-3 and ND = 1.0 x 1019 cm-3, respectively. A comparison between experimental data and simulation results for Cell B showed that the conversion efficiency can be enhanced from 5.61% to 8.81%, using the optimized values

High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

1992 ◽  
Vol 242 ◽  
Author(s):  
K. Ninomiya ◽  
H. Haku ◽  
H. Tarui ◽  
N. Nakamura ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Type A ◽  
Wide Bandgap ◽  
Dilution Method ◽  
High Quality ◽  
Bond Density ◽  
Si Solar Cell ◽  
P Type

ABSTRACTA total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

High Temperature Annealing Amorphous Hydrogenated SiC Films for the Application as Window Layers in Si-Based Solar Cell

2013 ◽  
Vol 401-403 ◽  
pp. 631-634 ◽  
Author(s):  
Rong Dun Hong ◽  
Xia Ping Chen ◽  
Qian Huang ◽  
Yan Nan Xie ◽  
Shao Xiong Wu ◽  
...  
Keyword(s):  
Refractive Index ◽  
Solar Cell ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Window Layer ◽  
High Temperature Annealing ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Sic Films

Amorphous hydrogenated silicon carbide (a-Si1-xCx:H) films were deposited by plasma enhanced chemical vapor deposition and subsequently annealed in N2 atmosphere at 1100 °C. The effects of high temperature annealing on the film’s optical and structural properties were systematically analyzed. It was noted that after high temperature annealing, amount of Si-C bonds increased significantly and SiC nanocrystalline was formed on the surface of the film, which resulted in an increasing refractive index in wavelength range of visible light, a decreasing absorbance index (wavelength<433.5 nm) and an increasing optical bandgap of the film. The changes of the optical properties illustrated that the performance of Si-based solar cell with a-Si1-xCx:H window layer could be improved by high temperature annealing.

Synthesis of Novel P-Type Nanocrystalline Si Prepared from SiH2Cl2and SiCl4for Window Layer of Thin Film Si Solar Cell

2004 ◽  
Vol 43 (9A) ◽  
pp. 5960-5966 ◽  
Author(s):  
Yoshie Ikeda ◽  
Tetsuji Ito ◽  
Yali Li ◽  
Michiaki Yamazaki ◽  
Yasuhiro Hasegawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Window Layer ◽  
Si Solar Cell ◽  
P Type ◽  
Nanocrystalline Si

scholarly journals ZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells

2018 ◽  
Vol 14 (2) ◽  
pp. 5435-5441
Author(s):  
Maarif Ali Jafarov ◽  
E.F. Nasirov ◽  
S.A. Jahangirova
Keyword(s):  
Solar Cell ◽  
Room Temperature ◽  
Layer Structure ◽  
Film Structure ◽  
Electrode System ◽  
Wide Bandgap ◽  
Window Layer ◽  
Device Structure ◽  
Cell Parameters ◽  
Device Architecture

A solar cell with glass/ITO/ZnS/Cu2ZnSnS4/CdTe/In structure has been fabricated using all-electrodeposited ZnS, Cu2ZnSnS4 and CdTe thin films. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form  ITO/ZnS/Cu2ZnSnS4/CdTe/In solar cell resulted in the formation of this 3-layer device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >12% under AM1.5 illumination conditions at room temperature.  These results demonstrate the advantages of the multi-layer device architecture over the conventional 2-layer structure.

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