scholarly journals Carbon Co-Deposition During Gas Reduction of Water-Atomized Fe-Cr-Mo Powder

2017 ◽  
Vol 62 (2) ◽  
pp. 1119-1124
Author(s):  
B. Ali ◽  
S.H. Choi ◽  
S.J. Seo ◽  
D.Y. Maeng ◽  
C.G. Lee ◽  
...  
Keyword(s):  
Carbon Content ◽  
Oxide Layer ◽  
Iron Powder ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
High Quality ◽  
Exponential Relationship ◽  
Water Atomization ◽  
Ar Gas

AbstractThe water atomization of iron powder with a composition of Fe-3Cr-0.5Mo (wt.%) at 1600°C and 150 bar creates an oxide layer, which in this study was reduced using a mixture of methane (CH4) and argon (Ar) gas. The lowest oxygen content was achieved with a 100 cc/min flow rate of CH4, but this also resulted in a co-deposition of carbon due to the cracking of CH4. This carbon can be used directly to create high-quality, sinter hardenable steel, thereby eliminating the need for an additional mixing step prior to sintering. An exponential relationship was found to exist between the CH4gas flow rate and carbon content of the powder, meaning that its composition can be easily controlled to suit a variety of different applications.

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

scholarly journals ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio

2012 ◽  
Vol 37 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Iping Suhariadi ◽  
Naho Itagaki ◽  
Kazunari Kuwahara ◽  
Koichi Oshikawa ◽  
Daisuke Yamashita ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rate Ratio ◽  
Gas Flow ◽  
Buffer Layers ◽  
Flow Rate Ratio ◽  
Gas Flow Rate ◽  
Ar Gas

Growth Promotion and Etching of Carbon Nanotubes by Carbon Dioxide in Chemical Vapor Deposition using Methane Gas

2007 ◽  
Vol 1057 ◽  
Author(s):  
Yoshiyuki Suda ◽  
Junichi Takayama ◽  
Takeshi Saito ◽  
Atsushi Okita ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Growth Promotion ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Preferential Growth ◽  
Ar Gas ◽  
Walled Cnts

ABSTRACTWe report the effect of CO2 addition to CO4 gas on carbon nanotube (CNT) growth by chemical vapor deposition. CO2 gas was introduced during the growth of CNTs on Fe0.05Mo0.025MgO0.925 and Ni0.05Mo0.025MgO0.925 catalysts by CO4 gas at a temperature of 800–850°C, and its concentration in a fraction of the gas flow rate was varied from 5×10−3 to 50%. In the experimental condition of the preferential growth of multi-walled CNTs, the carbon yield and the G/D ratio in the Raman spectra of the CNTs grown in 10%-CO2/CO4 were slightly higher than that grown in CO4 only. However, CNTs hardly grew when the CO2 concentration was more than 10%. We then prepared CO2 gas diluted with Ar gas (CO2/Ar) and varied its flow rate between 0 and 10 sccm. As the CO2/Ar gas flow rate was increased, the number of RBM peaks decreased even though the G/D ratio gradually decreased. The decrease in the RBM intensities of CNTs on the FeMoMgO catalyst was more significant than that of NiMoMgO.

Influence of Ar gas flow rate in organosilicon plasma for the fabrication of SiO:CH thin films by PECVD method

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5259-5261 ◽  
Author(s):  
Yongsup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Naoki Nanba ◽  
Yasushi Inoue ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Ar Gas

scholarly journals Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1635
Author(s):  
Md. Akhtaruzzaman ◽  
Md. Shahiduzzaman ◽  
Nowshad Amin ◽  
Ghulam Muhammad ◽  
Mohammad Aminul Islam ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Gas Flow Rate ◽  
Flow Rates ◽  
Ar Gas

Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 1014 to 26.29 × 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells.

scholarly journals Синтез тонких пленок TiN, Ti и TiSi-=SUB=-2-=/SUB=- для контактной системы солнечных элементов

2020 ◽  
Vol 62 (1) ◽  
pp. 46
Author(s):  
К.Х. Нусупов ◽  
Н.Б. Бейсенханов ◽  
Д.И. Бакранова ◽  
С. Кейнбай ◽  
А.А. Турахун ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
High Hardness ◽  
Gas Flows ◽  
Gas Flow Rate ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
C 30 ◽  
Ar Gas ◽  
Deposited Films

Abstract The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170°C, the N_2 gas flow rate 0.9–3.6 L/h, the Ar gas flow rate 0.06‒3.6 L/h, the ratio of N_2/Ar gas flows 1–60 on the thickness, the density, and the composition of the deposited films is analyzed. The maximum density 5.247 g/cm^3 corresponding to the TiN_0.786 = Ti_56N_44 composition has been achieved at the following deposition parameters: 1200 W, N/Ar = 1.8/0.06 L/h = 30, 0.8 Pa, 320 s, and 100°C. At temperatures 700–800°C, the mutual diffusion of titanium and silicon atoms through the interface leads to the active nucleation, the formation of nanocrystals and low-resistance metallization layers. X-ray diffraction shows that, during annealing at 700°C (30 min, Ar), the formation of phase TiSi_2 due to the diffusion of Ti atoms into silicon is twice more intense than the formation of Ti_5Si_3 due to the diffusion of silicon atoms into titanium as a result of high hardness of titanium. The average sizes of TiSi_2 decreases from 7.1 to 5.6 nm at 750°C due to the crystallization of the nuclei and increase to 9.2 nm at 800°C.

SCIENTIFIC AND ENGINEERING PRINCIPLES OF EFFICIENT FUEL USE AND ENVIRONMENTALLY FRIENDLY GAS COMBUSTION IN STOVE PLATES. PART 1. MODERN STATE-OF-THE-ART AND DIRECTIONS FOR IMPROVEMENT THE GAS BURNING IN DOMESTIC GAS COOKERS

2017 ◽  
pp. 3-18 ◽  
Author(s):  
B.S. Soroka ◽  
V.V. Horupa
Keyword(s):  
Natural Gas ◽  
Flow Rate ◽  
Gas Flow ◽  
Renewable Energy Sources ◽  
Combustion Process ◽  
Orifice Diameter ◽  
Firing Process ◽  
Gas Flow Rate ◽  
Gas Combustion ◽  
Gas Stoves

Natural gas NG consumption in industry and energy of Ukraine, in recent years falls down as a result of the crisis in the country’s economy, to a certain extent due to the introduction of renewable energy sources along with alternative technologies, while in the utility sector the consumption of fuel gas flow rate enhancing because of an increase the number of consumers. The natural gas is mostly using by domestic purpose for heating of premises and for cooking. These items of the gas utilization in Ukraine are already exceeding the NG consumption in industry. Cooking is proceeding directly in the living quarters, those usually do not meet the requirements of the Ukrainian norms DBN for the ventilation procedures. NG use in household gas stoves is of great importance from the standpoint of controlling the emissions of harmful components of combustion products along with maintenance the satisfactory energy efficiency characteristics of NG using. The main environment pollutants when burning the natural gas in gas stoves are including the nitrogen oxides NOx (to a greater extent — highly toxic NO2 component), carbon oxide CO, formaldehyde CH2O as well as hydrocarbons (unburned UHC and polyaromatic PAH). An overview of environmental documents to control CO and NOx emissions in comparison with the proper norms by USA, EU, Russian Federation, Australia and China, has been completed. The modern designs of the burners for gas stoves are considered along with defining the main characteristics: heat power, the natural gas flow rate, diameter of gas orifice, diameter and spacing the firing openings and other parameters. The modern physical and chemical principles of gas combustion by means of atmospheric ejection burners of gas cookers have been analyzed from the standpoints of combustion process stabilization and of ensuring the stability of flares. Among the factors of the firing process destabilization within the framework of analysis above mentioned, the following forms of unstable combustion/flame unstabilities have been considered: flashback, blow out or flame lifting, and the appearance of flame yellow tips. Bibl. 37, Fig. 11, Tab. 7.

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