Activation Energy of Reactions in the Gas Phase

1971 ◽  
Vol 248O (1) ◽  
Author(s):  
M. Parlapansky
Keyword(s):  
1963 ◽  
Vol 41 (6) ◽  
pp. 1578-1587 ◽  
Author(s):  
Jan A. Herman ◽  
Pierre M. Hupin

The polymerization of vinyl chloride in the gas phase by X rays gives a solid polymer of 1140 average molecular weight. The G value of monomer disappearance varies from 100 to 400 and depends on pressure and temperature. From the measure of the rate of polymerization it was possible to deduce the activation energy of the chain propagation steps: 2.5 kcal/mole, and that of the hindered termination process: 7.4 kcal/mole. The negative temperature co-efficient of the polymerization is explained by the importance of this hindered termination process.


1990 ◽  
Vol 192 ◽  
Author(s):  
M.J.M. Pruppers ◽  
K.M.H. Maessen ◽  
F.H.P.M. Habraken ◽  
J. Bezemer ◽  
W.F. Van Der Weg

ABSTRACTPhosphorus, boron and compensation doped hydrogenated amorphous silicon films were deposited in a glow discharge at different substrate temperatures in the range 50–330°C. Gas phase doping levels were 1%. At the lower temperatures the hydrogen concentration in the B doped and compensated doped films is larger than in the P and undoped films. For higher deposition temperatures the H concentration of the B doped films appeared to be smaller than in the other materials. The difference in hydrogen content of the doped and undoped material, deposited at various temperatures, is considered as a function of the measured activation energy for conduction in these films. This difference varies in much the same way with the activation energy as the hydrogen content in films deposited at one substrate temperature, but with varying gas phase dopant levels. This represents strong evidence that, apart from the deposition temperature, the hydrogen concentration in glow discharge a-Si:H is determined by the position of the Fermi level.


1981 ◽  
Vol 59 (14) ◽  
pp. 2133-2145 ◽  
Author(s):  
Jan A. Herman ◽  
Alex. G. Harrison

A series of formate (methyl through butyl) and acetate (methyl through pentyl) esters have been protonated in the gas phase by the Brønsted acids H3+, N2H+, CO2H+, N2OH+, and HCO+. Carbonyl oxygen protonation is 87–97 kcal mol−1 exothermic for H3+ and 47–57 kcal mol−1 exothermic for the weakest acid HCO+, permitting a study of the effect of protonation exothermicity on the decomposition modes of the protonated esters. With the exception of protonated methyl formate, three decomposition modes, (a) to (c) are observed.[Formula: see text]Reaction (a) is unimportant for formates; for acetates it is the sole decomposition channel for the methyl ester, but is less important for higher acetates. The dependence of the relative importance of this reaction mode on the protonation exothermicity indicates an activation energy considerably in excess of ΔH0, presumably because the reaction involves a symmetry-forbidden 1,3-H shift for the carbonyl protonated ester. For the higher acetates where the difference in the proton affinities of the carbonyl and ether oxygens is less, acyl ion formation results, in part, from protonation at the ether oxygen. For protonated methyl formate the major fragmentation reaction yields CH3OH2+ + CO; this reaction also appears to have an activation energy considerably in excess of the ΔH0. For the remaining esters either reaction (b) or (c) is the major decomposition mode. The competition between these two channels depends strongly on the protonation exothermicity and the relative activation energies. From the reaction competition we conclude that 1,2-H shifts occur in the case of primary alkyl esters yielding more stable secondary or tertiary alkyl ions. This rearrangement appears to occur after the excess energy has been partitioned between the alkyl ion and the neutral acid since the extent of further fragmentation of the alkyl ion reflects the original structure of the alkyl group.


2018 ◽  
Vol 24 (47) ◽  
pp. 12354-12358 ◽  
Author(s):  
Sunghwan Choi ◽  
Yeonjoon Kim ◽  
Jin Woo Kim ◽  
Zeehyo Kim ◽  
Woo Youn Kim

Materials ◽  
2020 ◽  
Vol 13 (20) ◽  
pp. 4470
Author(s):  
Ndue Kanari ◽  
Eric Allain ◽  
Lev Filippov ◽  
Seit Shallari ◽  
Frédéric Diot ◽  
...  

The most economically important iron-chromium bearing minerals is chromite. In natural deposits, iron(II) is frequently substituted by magnesium(II) while chromium(III) is replaced by aluminum(III) and/or iron(III) forming a complex chromium bearing material. The majority of mined chromite is intended for the production of ferrochrome which requires a chromite concentrate with high chromium-to-iron ratio. Found mostly in the spinel chromite structure, iron cannot be removed by physical mineral processing methods. In this frame, the present work deals with the reaction of chlorine and chlorine+oxygen with selected samples of chromite concentrates for assessing the reactivity of their components towards chlorinating atmosphere, allowing the preferential removal of iron, hence meeting the chromite metallurgical grade requirements. Isothermal thermogravimetric analysis was used as a reliable approach for the kinetic reactivity investigation. Results indicated a wide difference in the thermal behavior of chromite constituents in a chlorinating atmosphere when considering their respective values of apparent activation energy oscillating from about 60 to 300 kJ/mol as a function of the sample reacted fraction. During the chromite treatment by chlorine in presence of oxygen, chromium was recovered as liquid chromyl chloride by condensation of the reaction gas phase.


1979 ◽  
Vol 34 (1) ◽  
pp. 81-88 ◽  
Author(s):  
J. Küppers ◽  
A. Plagge

Abstract The reaction of oxygen and CO to form CO2 has been investigated using an Ir (111) surface as an acting catalyst. Both instationary and stationary reaction processes have been established via separate gas exposing techniques. The instationary reaction process, achieved from coadsorbed CO and O which per se is an LH reaction is found to be controlled by an apparent activation energy of 10.7 kcal/mole. The stationary reaction with both CO and O2 continuously present in the gas phase has been simulated using a proper computer program, involving both LH and ER reaction steps. By comparison with experimental results, close agreement is found when ruling out any ER reaction step from the reaction path.


1985 ◽  
Vol 63 (11) ◽  
pp. 2945-2948 ◽  
Author(s):  
J.-R. Cao ◽  
R. A. Back

The thermal decomposition of cyclobutane-1,2-dione has been studied in the gas phase at temperatures from 120 to 250 °C and pressures from 0.2 to 1.5 Torr. Products were C2H4 + 2CO, apparently formed in a simple unimolecular process. The first-order rate constant was strongly pressure dependent, and values of k∞ were obtained by extrapolation of plots of 1/k vs. 1/p to1/p = 0. Experiments in a packed reaction vessel showed that the reaction was enhanced by surface at the lower temperatures. Arrhenius parameters for k∞, corrected for surface reaction, were log A (s−1) = 15.07(±0.3) and E = 39.3(±2) kcal/mol. This activation energy seems too low for a biradical mechanism, and it is suggested that the decomposition is probably a concerted process. The vapor pressure of solid cyclobutane-1,2-dione was measured at temperatures from 22 to 62 °C and a heat of sublimation of 13.1 kcal/mol was estimated.


2000 ◽  
Vol 612 ◽  
Author(s):  
Se-Joon Im ◽  
Soo-Hyun Kim ◽  
Ki-Chul Park ◽  
Sung-Lae Cho ◽  
Ki-Bum Kim

AbstractTantalum nitride (TaN) films were deposited using pentakis-diethylamido-tantalum [PDEAT, Ta(N(C2H5)2)5] as a precursor. During film growth, N- and Ar-ion beams with an energy of 120 eV were supplied in order to improve the film quality. In case of thermallydecomposed films, the deposition rate is controlled by the surface reaction up to about 350 °C with an activation energy of about 1.07 eV. The activation energy of the surface reaction controlled regime is decreased to 0.26 eV when the Ar-beam is applied. However, in case of Nbeam bombarded films, the deposition is controlled by the precursor diffusion in gas phase at the whole temperature range. By using Ar-beam, the resistivity of the film is drastically reduced from approximately 10000 µω-cm to 600 µω-cm and the density of the film is increased from 5.85 g/cm3 to 8.26 g/cm3, as compared with thermally-decomposed film. The use of N-beam also considerably lowers the resistivity of films (∼ 800 µω-cm) and increases the density of the films (7.5 g/cm3). Finally, the diffusion barrier properties of 50-nm-thick TaN films for Cu were investigated aftre annealing by X-ray diffraction analysis. The films deposited using N- and Arbeam showed the Cu3Si formation after annealing at 650 °C for 1 hour, while thermallydecomposed films showed Cu3Si peaks firstly after annealing at 600 °C. It is considered that the improvements of the diffusion barrier performance of the films deposited using N- and Ar-ion beam are the consequence of the film densification resulting from the ion bombardment during film growth.


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