Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

Influence of Deposition Time and Source-Substrate Distance on Properties of CdTe Thin Films Using Close-Spaced Sublimation at Higher Source Temperature

2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Near Infrared ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray ◽  
Source Temperature ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Cdte Thin Films

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

The Effects of Selenization Temperature on the Properties of CIGS Thin Film Prepared by Cu-In-Ga-Se Precursors

2012 ◽  
Vol 528 ◽  
pp. 214-218
Author(s):  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
Xue Yan Zhang ◽  
Xiao Yu Liu
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Degree Of Reaction ◽  
N2 Atmosphere ◽  
Cigs Thin Film ◽  
Morphology Of Films ◽  
Selenization Temperature

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.

scholarly journals Preparation and Characterization of Molybdenum Thin Films by Direct-Current Magnetron Sputtering

2017 ◽  
Vol 2 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Shih-Fan Chen ◽  
Shea-Jue Wang ◽  
Win-Der Lee ◽  
Ming-Hong Chen ◽  
Chao-Nan Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Hall Effect Measurement ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Low Resistivity ◽  
Glass Substrates ◽  
Deposition Conditions

The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.

Preparation of Cu(In,Ga)Se2 thin films at low substrate temperatures

2001 ◽  
Vol 16 (2) ◽  
pp. 394-399 ◽  
Author(s):  
S. Nishiwaki ◽  
T. Satoh ◽  
Y. Hashimoto ◽  
T. Negami ◽  
T. Wada
Keyword(s):  
Thin Films ◽  
Surface Composition ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Monitoring Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

Cu(In,Ga)Se2(CIGS) thin films were prepared at substrate temperatures of 350 to 500 °C. The (In,Ga)2Se2 precursor layers were deposited on Mo coated soda-lime glass and then exposed to Cu and Se fluxes to form CIGS films. The surface composition was probed by a real-time composition monitoring method. The CIGS films were characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. The transient formation of a Cu–Se phase with a high thermal emissivity was observed during the deposition of Cu and Se at a substrate temperature of 350 °C. Faster diffusion of In than Ga from the (In,Ga)2Se3 precursor to the newly formed CIGS layer was observed. A growth model for CIGS films during the deposition of Cu and Se onto (In,Ga)2Se3 precursor is proposed. A solar cell using a CIGS film prepared at about 350 °C showed an efficiency of 12.4%.

scholarly journals ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Abdalla A. Alnajjar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Transparent Conductive Oxide ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ceramic Targets

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffractionθ/2θscans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.

scholarly journals Thin Films Growth of SnO_2:F/CdS/CdTe, and Studies of Their Physical and Optical Properties using Spray Pyrolysis Techniques

2021 ◽  
pp. 19-31
Author(s):  
A. O. Musa ◽  
A. B. Ahmed ◽  
Mansur Said ◽  
Mani Tsoho ◽  
A. B. Suleiman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spray Pyrolysis ◽  
Optical Sensors ◽  
Main Peak ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
Soda Lime Glass Substrate ◽  
X Ray

Fluorine doped tin oxide, Cadmium Sulphide  and Cadmium Telluride  thin films have been deposted on Soda Lime glass substrate at  respectively by spray pyrolysis (SP) technique and are important semiconductor materials in optoelectronic devices such as optical sensors, light-emitting diodes, transistors and photovoltaic cells.  thin films were characterized by various techniques such as X-ray diffraction, SEM and optical studies. X-ray diffraction measurements show that the deposited   was found to be of cassiterite type with tetragonal rutile structure, observation of peaks of different planes on an X-ray diffraction graph of  thin film showed that  film obtained were cubic structure. The main peak value of  thin film is seen at , which is the characteristic peak of the  compound  and the  film structure was obtained at the major peak  indicating the preferred orientation of  films along  direction. This confirms the formation of  thin film, with (111) as the strongest preferred plane of orientation. The surface morphology of the thin films was analysed by scanning electron microscopy (SEM). The optical energy band gap of thin films are determine  The results showed that the prepared FTO, CdS and CdTe films can be used in solar energy applications.

Investigations on Chemo-Mechano Stabilities of the Molybdenum Thin Films Deposited by DC-Sputter Technique

2015 ◽  
Vol 229 (3) ◽  
Author(s):  
Ganesh L. Agawane ◽  
Seung W. Shin ◽  
Sharadrao A. Vanalakar ◽  
Mahesh P. Suryawanshi ◽  
Annasaheb V. Moholkar ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
High Speed ◽  
Mechanical Stability ◽  
Soda Lime ◽  
Ammonia Solution ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Gas Pressures

AbstractThis paper reports the chemical and mechanical stability of Molybdenum (Mo) thin films deposited by direct current magnetron sputtering technique onto soda lime glass substrates. Mo thin films were deposited at various Ar (working) gas pressures to get optimized structural, morphological, adhesive and electrical properties. Mo thin films were further characterized by field emission scanning electron microscope (FE-SEM), X-ray diffraction, Hall measurements and the cross hatch tape test. To study their chemical stability the prepared Mo thin films were further dipped in acetic acid and ammonia solution for 6 h. Mechanical stability of Mo thin films was tested by high speed ultrasonication for an hour. Both the chemical and mechanical stability studies showed that Mo thin films were highly stable since morphology, adhesion and electrical properties did not alter significantly. FE-SEM results showed that the grain size of the chemo-mechano stability tested Mo thin films remained significantly similar with an unimportant effect on the film thickness. Electrical properties showed that electrical resistivity and hall mobility for as-deposited Mo thin films were 2.7 · 10

Thermoelectric Properties of B12+xC3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Kazuo Kitajima ◽  
Ichiro Ruiz ◽  
Tetsuo Suzuki ◽  
Weihua Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Ion Beam ◽  
Nominal Composition ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Ablation Plasma ◽  
A Current

AbstractThin films of boron carbide (B12+xC3-x) were prepared on glass substrates by a pulsed ion-beam evaporation method. A pulsed proton beam with an energy of 1 MV (peak) and a current of 60 kA was focused on sintered B12+xC3-x targets. Ablation plasma was formed from the irradiated targets and thin films were prepared on Pyrex and SiO2 glass substrates at room temperature. From results of X-ray diffraction, the thin films consisted of a B12+xC3-x phase. Using a known relationship between the composition and the lattice parameters, the composition of B12+x1C3-x thin films was estimated to be x = 0.3 and 1.0, which were close to the nominal composition of the targets. These results indicate that B12+x1C3-x with different carbon contents has been successfully prepared by IBE without substrate heating or sample annealing. Thermoelectric properties of the thin films were measured. A B12+x1C3-x thin film with estimated composition of x =0.9 exhibited the highest power factor at room temperature among the B12+x1C3-x samples reported.

Preparation and Characterization of Hot Wall Deposited CuInGaSe2 Thin Films for Solar Cell Applications

2014 ◽  
Vol 705 ◽  
pp. 56-59
Author(s):  
S. Arul ◽  
N. Muthukumarasamy ◽  
M.D. Kannan ◽  
S. Jayakumar
Keyword(s):  
Thin Films ◽  
Chemical Constituents ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Direct Reaction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Double Beam ◽  
20 Nm

CuIn0.7Ga0.3Se2 (CIGS) bulk compound was prepared by direct reaction of high purity (99.99%) elemental copper, indium, gallium and selenium. Using the prepared bulk CIGS, polycrystalline CuInGaSe2 thin films were deposited onto well cleaned soda-lime glass substrates using hot wall deposition technique by optimizing process parameters such as the wall temperature, filament current and time of deposition. The x-ray diffraction studies on the as-prepared films revealed polycrystalline nature. The composition of the chemical constituents present in the prepared bulk and thin films has been determined using energy dispersive X-ray analysis (EDX). The surface morphology of CIGS thin film of deposition time 3 min. have been carried out using Atomic Force Microscopy (AFM). The AFM images revealed that the average grain size was 20 nm and the surface roughness was about 8 nm. Transmittance spectra in the wavelength range of 190 nm to 2500 nm was obtained using a double beam spectrophotometer (UV-VIS) and the results are discussed.

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