scholarly journals Electron Beam Irradiation – a Potential Inducer of Sperm Abnormalities in Swiss Albino Mouse, Mus Musculus Exposed to Median Lethal Dose

2011 ◽  
Vol 3 (7) ◽  
pp. 637-639
Author(s):  
Vijay Mala (Grover) Nair Vijay Mala (Grover) Nair ◽  
◽  
Akhila M Akhila M ◽  
Ganesh Sanjeev ◽  
Prashantha Naik ◽  
...  
Keyword(s):  
Electron Beam ◽  
Mus Musculus ◽  
Electron Beam Irradiation ◽  
Lethal Dose ◽  
Swiss Albino Mouse ◽  
Beam Irradiation ◽  
Median Lethal Dose ◽  
Sperm Abnormalities

scholarly journals Inactivation of Bacillus Endospores in Envelopes by Electron Beam Irradiation

2005 ◽  
Vol 71 (11) ◽  
pp. 7029-7032 ◽  
Author(s):  
Shannon L. Helfinstine ◽  
Carlos Vargas-Aburto ◽  
Roberto M. Uribe ◽  
Christopher J. Woolverton
Keyword(s):  
Electron Beam ◽  
Thermal Effects ◽  
Electron Beam Irradiation ◽  
Lethal Dose ◽  
The United States ◽  
Maximum Temperature ◽  
Postal Service ◽  
Beam Irradiation ◽  
Lower Temperature ◽  
The U.S

ABSTRACT The anthrax incidents in the United States in the fall of 2001 led to the use of electron beam (EB) processing to sanitize the mail for the U.S. Postal Service. This method of sanitization has prompted the need to further investigate the effect of EB irradiation on the destruction of Bacillus endospores. In this study, endospores of an anthrax surrogate, B. atrophaeus, were destroyed to demonstrate the efficacy of EB treatment of such biohazard spores. EB exposures were performed to determine (i) the inactivation of varying B. atrophaeus spore concentrations, (ii) a D10 value (dose required to reduce a population by 1 log10) for the B. atrophaeus spores, (iii) the effects of spore survival at the bottom of a standardized paper envelope stack, and (iv) the maximum temperature received by spores. A maximum temperature of 49.2°C was reached at a lethal dose of ∼40 kGy, which is a significantly lower temperature than that needed to kill spores by thermal effects alone. A D10 value of 1.53 kGy was determined for the species. A surface EB dose between 25 and 32 kGy produced the appropriate killing dose of EB between 11 and 16 kGy required to inactivate 8 log10 spores, when spore samples were placed at the bottom of a 5.5-cm stack of envelopes.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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