Influence of Ar Implantation on the Precipitation in Au Ion Irradiated AISI 316L Solution Annealed Alloy

MRS Advances ◽  
2018 ◽  
Vol 3 (31) ◽  
pp. 1799-1805 ◽  
Author(s):  
Ítalo M. Oyarzabal ◽  
Mariana de M. Timm ◽  
Willian M. Pasini ◽  
Franciele S. M. de Oliveira ◽  
Francine Tatsch ◽  
...  
Keyword(s):  
Extended Defects ◽  
Aisi 316L ◽  
Ion Milling ◽  
High Concentration ◽  
Plan View ◽  
Near Surface ◽  
Transmission Electron ◽  
Precipitate Growth ◽  
Damage Content ◽  
Steel Foils

ABSTRACT200 μm thick solution annealed AISI 316L stainless steel foils were implanted with Ar ions to produce a 0.25 at. % concentration-depth plateau extending from the near surface to a depth of ≈ 250 nm, and then annealed at 550°C for 2 hours to form small Ar bubbles and Ar-vacancy clusters. Distinct sets of samples (including control ones without Ar) were irradiated at the temperature of 550 °C with Au ions accelerated at 5 MeV to produce an average damage content about ≈36 dpa at the region containing the Ar plateau. These samples were investigated by transmission electron microscopy using plan-view specimens prepared by ion milling. In contrast with the control samples where the irradiation causes the formation of a high concentration of extended defects and large cavities, carbonite precipitation of 1:1 metal-carbon (MC) content with a cubic structure occurs only in the samples containing the Ar bubbles. This precipitation phenomenon is not commonly observed in the literature. The results are interpreted considering that the precipitate growth process requires the emission of vacancies which are synergistically absorbed by the growth of the Ar bubbles.

BIC Formation and Boron Diffusion in Relaxed Si0.8Ge0.2

2004 ◽  
Vol 810 ◽  
Author(s):  
R. T. Crosby ◽  
L. Radic ◽  
K. S. Jones ◽  
M. E. Law ◽  
P.E. Thompson ◽  
...  
Keyword(s):  
Surface Region ◽  
Extended Defects ◽  
Defect Structures ◽  
Boron Diffusion ◽  
Plan View ◽  
Near Surface ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Ion Implanted

ABSTRACTThe relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.25 [.proportional]m into the substrate, as well as boron marker layers positioned 0.50 [.proportional]m below the surface. The boron well concentrations are as follows: 0, 7.5×1018, 1.5×1019, and 5.0×1019 atoms/cm3. The boron marker layers are approximately 3 nm wide and have a peak concentration of 5×1018 atoms/cm3. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014 atoms/cm2 and subsequently annealed at 675°C and 750°C for various times. Plan-view Transmission Electron Microscopy (PTEM) was used to monitor the agglomeration of injected silicon interstitials and the evolution of extended defects in the near surface region. Secondary Ion Mass Spectroscopy (SIMS) concentration profiles facilitated the characterization of boron diffusion behaviors during annealing. Interstitial supersaturation conditions and the resultant defect structures of ion implanted relaxed Si0.8Ge0.2 in both the presence and absence of boron have been characterized.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

Extended Defects in 4H-SiC PiN Diodes

2002 ◽  
Vol 742 ◽  
Author(s):  
M. E. Twigg ◽  
R. E. Stahlbush ◽  
M. Fatemi ◽  
S. D. Arthur ◽  
J. B. Fedison ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Compressive Strain ◽  
Pin Diode ◽  
Extended Defects ◽  
Pin Diodes ◽  
Plan View ◽  
Shockley Partial ◽  
Inhomogeneous Strain ◽  
Partial Dislocations ◽  
Transmission Electron

ABSTRACTUsing site-specific plan-view transmission electron microscopy (TEM) and lightemission imaging (LEI), we have identified SFs formed during forward biasing of 4H-SiC PiN diodes. These SFs are bounded by Shockley partial dislocations and are formed by shear strain rather than by condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during PiN diode operation, suggesting the presence of a complex and inhomogeneous strain field in the 4H-SiC layer.

Secondary Defect Formation And Gettering in Mev Self-Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
R. A. Brown ◽  
O. Kononchuk ◽  
Z. Radzimski ◽  
G. A. Rozgonyi ◽  
F. Gonzalez
Keyword(s):  
Defect Formation ◽  
Extended Defects ◽  
Near Surface ◽  
Projected Range ◽  
Annealing Conditions ◽  
Float Zone ◽  
Transmission Electron ◽  
Secondary Defect ◽  
Secondary Ion

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

Stability And Precipitation Kinetics In Si1-yCy/Si and Si1-x-yGexC/Si Heterostructures Prepared by Solid Phase Epitaxy

1993 ◽  
Vol 321 ◽  
Author(s):  
J. W. Strane ◽  
S. T. Picraux ◽  
H. J. Stein ◽  
S. R. Lee ◽  
J. Candelaria ◽  
...  
Keyword(s):  
Structural Changes ◽  
Driving Forces ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Solid Phase Epitaxy ◽  
Extended Defects ◽  
Plan View ◽  
Nucleation Barrier ◽  
Transmission Electron ◽  
The Stability

ABSTRACTThis study investigates the stability of Metastable Si1-yCy/Si heterostructures during rapid thermal annealing (RTA) over a temperature range of 1000 – 1150° C Heterostructures of Si1-yCy/Si and Si1-x-yGexCy/Si (x=0.077, y ≤ .0014) were formed by solid phase epitaxy from C implanted, preamorphized substrates using a 30 Minute 700° C anneal in N2. The occupancy of C in substitution lattice sites was monitored by Fourier Transform Infrared Absorption spectroscopy. The layer strain was monitored by rocking curve x-ray diffraction and the structural changes in the layers were determined using plan-view and X-sectional transmission electron Microscopy (TEM). For anneals of 1150° C or above, all the substitutional C was lost from the Si lattice after 30 seconds. TEM verified that the strain relaxation was the result of C precipitating into highly aligned βSiC particles rather than by the formation of extended defects. No nucleation barrier was observed for the loss of substitutional C Preliminary results will also be discussed for Si1-x-yGexCy/Si heterostructures where there is the additional factor of the competition between strain energy and the chemical driving forces.

Structural modifications in H-implanted and laser desorbed Si

1992 ◽  
Vol 50 (1) ◽  
pp. 48-49
Author(s):  
P. Zheng ◽  
R.G. Saint-Jacques ◽  
R. Boivin ◽  
B. Terreault
Keyword(s):  
Dynamic Imaging ◽  
Elastic Recoil ◽  
Cross Sectional ◽  
Plan View ◽  
Near Surface ◽  
Elastic Recoil Detection ◽  
Structural Modifications ◽  
Transmission Electron ◽  
Imaging Conditions ◽  
Hydrogen Ion Implantation

Near-surface microstructural modifications of silicon which occur in hydrogen ion implantation and classical thermal desorption have already been reported. Our work is related to desorption using an intense and pulsed laser. The particularity of this technique is only the surface (≈2μm) heated. We report results of transmission electron microscopy (TEM) of the microstructural modifications in H-implanted and laser desorbed silicon.Silicon [001] oriented has been implanted with 5 keV H to a dose of 1017cm-2 and desorbed with a ruby laser (694.3 nm, 30 ns). It received an energy of 0.9 J.cm-2 and its surface temperature reached the melting point. This sample was totally desorbed as indicated by mass spectroscopy and checked by Elastic Recoil Detection. Plan-view [001] and cross-sectional [110] TEM samples were mechano-chemically thinned (10% HF + 90% HNO3). TEM dynamic imaging conditions (imaging vector g=220, w=0) were used to observe the defects.

Microstructural And Microchemical Analysis of Chalcopyrite Cu(In,Ga)Se2 Films

2003 ◽  
Vol 763 ◽  
Author(s):  
Chun-Ming Li ◽  
Chang-Hui Lei ◽  
Ian M. Robertson ◽  
Angus Rockett
Keyword(s):  
Grain Boundaries ◽  
High Performance ◽  
Structural Defects ◽  
Ion Milling ◽  
Mechanical Grinding ◽  
Cross Sectional ◽  
Plan View ◽  
Microchemical Analysis ◽  
Transmission Electron ◽  
Means Of Transmission

AbstractThe microstructure and microchemistry of Cu(In, Ga)Se2 (CIGS) films have been analyzed by means of transmission electron microscopy (TEM). Specimens were obtained from a number of groups producing high-performance solar cells from these materials. Both plan-view and cross-sectional TEM samples were prepared by mechanical grinding and ion milling. Twins can be found easily within the films while dislocations are present only in a few grains and with low density. No extended structural defects such as stacking faults were discovered. X-ray energy dispersive spectroscopy was used to study the chemical composition of grains and grain boundaries. Experimental results showed no difference between the composition in the grain interiors and the grain boundary. In addition, there is no obvious enhancement of oxygen and sodium at grain boundaries. Structural depth dependences were also not found.

A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 357-364
Author(s):  
S. Peripolli ◽  
Marie France Beaufort ◽  
David Babonneau ◽  
Sophie Rousselet ◽  
P.F.P. Fichtner ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
Inert Gases ◽  
Extended Defects ◽  
Cross Sectional ◽  
Plan View ◽  
New Approach ◽  
X Ray ◽  
Implantation Temperature ◽  
X Ray Scattering ◽  
Transmission Electron

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

scholarly journals Detection of crystalline phase in cross-section multilayer thin film by High-Resolution Transmission Electron Microscopy

1989 ◽  
Vol 47 ◽  
pp. 680-681
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Crystalline Phase ◽  
Glass Slide ◽  
Ion Milling ◽  
Si Substrate ◽  
Plan View ◽  
Transmission Electron

High-resolution transmission electron microscopy has proven to be very useful in direct detection of crystalline phases that exist over extremely small volumes, yielding information about structure, orientation, and, under appropriate circumstances, composition. In this paper, we report the detection of a crystalline phase in the tungsten-rich layer of an annealed 7 nm-period tungsten-carbon multilayer produced at the Center for X-Ray Optics at the Lawrence Berkeley Laboratory.The multilayers were prepared by dc magnetron sputtering at floating temperature. The argon sputter gas pressure was 0.0020 torr. Different techniques were employed to produce cross-section and plan-view samples for TEM. For cross-section samples, 70 bilayers of W and C were sputtered on semiconductor-grade Si (111) wafers. For plan-view samples, the substrates on which the multilayer was grown consisted of 3 mm-diameter 300-mesh copper microscope grids, mounted on glass slide with Crystalbond® vacuum adhesive. After a deposition of 4 bilayers of W-C, keeping the same sputtering parameters as those of the Si substrates to guarantee the same layer thicknesses, the glass slide was soaked in acetone to disolve the Crystalbond®, leaving the multilayer spanning the holes of the copper grids. Both the Si-substrate and copper-grid samples were annealed at 500°C for 4 hours under vacuum of 10−6 torr. The annealed Si-substrate sample was then prepared for cross-section by mechanical grinding, and ion milling in a cold stage at 5kV. The cross-section sample was studied in a JEOL JEM 200CX with ultrahigh resolution goniometer, with the eletron beam parallel to the [112] of the Si substrate. The plan-view sample was studied in a Philips 301 operating at 100kV.

A Controlled Method Of Preparing Plan-View Silicon Samples For Transmission Electron Microscopy Studies

1987 ◽  
Vol 115 ◽  
Author(s):  
Myrtle B. Ellington
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Semiconductor Materials ◽  
Extended Defects ◽  
Plan View ◽  
Transmission Electron ◽  
Wet Chemical

ABSTRACTTransmission electron microscopy (TEM) is an important technique for studies of extended defects and other microstructural features in semiconductor materials. An efficient, plan-view thinning technique is always desirable for these TEM studies. The problems associated with wet chemical thinning of silicon are often surface residues, pitting and rapid breakthrough. A controlled method for obtaining thin, plan-view TEM silicon samples by chemical thinning was developed and the method is described in this paper. Results indicate that the method minimizes the above cited problems and has several other advantages over previously reported thinning methods.

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