Extended Defects in 4H-SiC PiN Diodes

2002 ◽  
Vol 742 ◽  
Author(s):  
M. E. Twigg ◽  
R. E. Stahlbush ◽  
M. Fatemi ◽  
S. D. Arthur ◽  
J. B. Fedison ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Compressive Strain ◽  
Pin Diode ◽  
Extended Defects ◽  
Pin Diodes ◽  
Plan View ◽  
Shockley Partial ◽  
Inhomogeneous Strain ◽  
Partial Dislocations ◽  
Transmission Electron

ABSTRACTUsing site-specific plan-view transmission electron microscopy (TEM) and lightemission imaging (LEI), we have identified SFs formed during forward biasing of 4H-SiC PiN diodes. These SFs are bounded by Shockley partial dislocations and are formed by shear strain rather than by condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during PiN diode operation, suggesting the presence of a complex and inhomogeneous strain field in the 4H-SiC layer.

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 383-386 ◽  
Author(s):  
Mark E. Twigg ◽  
Robert E. Stahlbush ◽  
Peter A. Losee ◽  
Can Hua Li ◽  
I. Bhat ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Dark Field ◽  
Pin Diodes ◽  
Plan View ◽  
Planar Defects ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Transmission Electron

Using light emission imaging (LEI), we have determined that not all planar defects in 4H-SiC PiN diodes expand in response to bias. Accordingly, plan-view transmission electron microscopy (TEM) observations of these diodes indicate that these static planar defects are different in structure from the mobile stacking faults (SFs) that have been previously observed in 4H-SiC PiN diodes. Bright and dark field TEM observations reveal that such planar defects are bounded by partial dislocations, and that the SFs associated with these partials display both Frank and Shockley character. That is, the Burgers vector of such partial dislocations is 1/12<4-403>. For sessile Frank partial dislocations, glide is severely constrained by the need to inject either atoms or vacancies into the expanding faulted layer. Furthermore, these overlapping SFs are seen to be fundamentally different from other planar defects found in 4H-SiC.

Influence of Ar Implantation on the Precipitation in Au Ion Irradiated AISI 316L Solution Annealed Alloy

MRS Advances ◽  
2018 ◽  
Vol 3 (31) ◽  
pp. 1799-1805 ◽  
Author(s):  
Ítalo M. Oyarzabal ◽  
Mariana de M. Timm ◽  
Willian M. Pasini ◽  
Franciele S. M. de Oliveira ◽  
Francine Tatsch ◽  
...  
Keyword(s):  
Extended Defects ◽  
Aisi 316L ◽  
Ion Milling ◽  
High Concentration ◽  
Plan View ◽  
Near Surface ◽  
Transmission Electron ◽  
Precipitate Growth ◽  
Damage Content ◽  
Steel Foils

ABSTRACT200 μm thick solution annealed AISI 316L stainless steel foils were implanted with Ar ions to produce a 0.25 at. % concentration-depth plateau extending from the near surface to a depth of ≈ 250 nm, and then annealed at 550°C for 2 hours to form small Ar bubbles and Ar-vacancy clusters. Distinct sets of samples (including control ones without Ar) were irradiated at the temperature of 550 °C with Au ions accelerated at 5 MeV to produce an average damage content about ≈36 dpa at the region containing the Ar plateau. These samples were investigated by transmission electron microscopy using plan-view specimens prepared by ion milling. In contrast with the control samples where the irradiation causes the formation of a high concentration of extended defects and large cavities, carbonite precipitation of 1:1 metal-carbon (MC) content with a cubic structure occurs only in the samples containing the Ar bubbles. This precipitation phenomenon is not commonly observed in the literature. The results are interpreted considering that the precipitate growth process requires the emission of vacancies which are synergistically absorbed by the growth of the Ar bubbles.

Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 397-400
Author(s):  
Takahiro Sato ◽  
Yoshihisa Orai ◽  
Toshiyuki Isshiki ◽  
Munetoshi Fukui ◽  
Kuniyasu Nakamura
Keyword(s):  
Cross Section ◽  
Edge Dislocation ◽  
Basal Plane ◽  
Dislocation Line ◽  
Plan View ◽  
Conversion Point ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Basal Plane Dislocation

Cross section and plan view dislocation analysis at the conversion point of a basal plane dislocation (BPD) into a threading edge dislocation (TED) in a silicon carbide epitaxial wafer was developed using a newly modified multi directional scanning transmission electron microscopy (STEM) technique. Cross section STEM observation in the [-1100] direction, found a conversion point located 5.5 μm from the surface, where two dislocation lines in the basal plane convert into one dislocation line nearly along the hexagonal c axis was observed. Using plan view STEM observation along the [000-1] direction, it is confirmed that the dislocation lines are two partial dislocations of a BPD and one TED by g·b invisibility analysis. This new technique is a powerful tool to evaluate the fundamental dislocation characteristics of power electronics devices.

Deformation-induced α2 ↔ γ phase transformation in a Ti–48Al–2Cr alloy

2000 ◽  
Vol 15 (10) ◽  
pp. 2145-2150 ◽  
Author(s):  
J. X. Zhang ◽  
H. Q. Ye
Keyword(s):  
Electron Microscopy ◽  
Phase Transformation ◽  
Lattice Misfit ◽  
Hrem Image ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Ledge Mechanism ◽  
Related Process ◽  
Image Simulations

The structure of γ–α2 interfaces in deformed Ti–48Al–2Cr alloy was analyzed by high-resolution transmission electron microscopy (HREM) and image simulations. Growth of γ–TiAl plate in α2–Ti3Al phase was found to be a result of a ledge mechanism consisting of Shockley partial dislocations on alternate (0001)α2 planes. The height of the ledges was always a multiple of two (0001)α2 planes. The γ → α2 phase transformation was also an interface-related process. Large ledges of six close packed planes (111)γ high were often observed at the γ–α2 interface. Every large ledge consisted of six Shockley partial dislocations that originated from the γ–a2 interfacial lattice misfit. The movement of these partial dislocations accomplished the transformation of γ → α2 phase. Comparing the experimental and simulated HREM image, it was found that atomic reordering appears during the deformation-induced γ↔α2 transformation.

Stability And Precipitation Kinetics In Si1-yCy/Si and Si1-x-yGexC/Si Heterostructures Prepared by Solid Phase Epitaxy

1993 ◽  
Vol 321 ◽  
Author(s):  
J. W. Strane ◽  
S. T. Picraux ◽  
H. J. Stein ◽  
S. R. Lee ◽  
J. Candelaria ◽  
...  
Keyword(s):  
Structural Changes ◽  
Driving Forces ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Solid Phase Epitaxy ◽  
Extended Defects ◽  
Plan View ◽  
Nucleation Barrier ◽  
Transmission Electron ◽  
The Stability

ABSTRACTThis study investigates the stability of Metastable Si1-yCy/Si heterostructures during rapid thermal annealing (RTA) over a temperature range of 1000 – 1150° C Heterostructures of Si1-yCy/Si and Si1-x-yGexCy/Si (x=0.077, y ≤ .0014) were formed by solid phase epitaxy from C implanted, preamorphized substrates using a 30 Minute 700° C anneal in N2. The occupancy of C in substitution lattice sites was monitored by Fourier Transform Infrared Absorption spectroscopy. The layer strain was monitored by rocking curve x-ray diffraction and the structural changes in the layers were determined using plan-view and X-sectional transmission electron Microscopy (TEM). For anneals of 1150° C or above, all the substitutional C was lost from the Si lattice after 30 seconds. TEM verified that the strain relaxation was the result of C precipitating into highly aligned βSiC particles rather than by the formation of extended defects. No nucleation barrier was observed for the loss of substitutional C Preliminary results will also be discussed for Si1-x-yGexCy/Si heterostructures where there is the additional factor of the competition between strain energy and the chemical driving forces.

Electromechanical Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Capacitors

1998 ◽  
Vol 541 ◽  
Author(s):  
G. Catalan ◽  
M.H. Corbett ◽  
R.M. Bowman ◽  
J.M. Gregg
Keyword(s):  
Thin Film ◽  
Compressive Strain ◽  
X Ray Diffraction ◽  
Leakage Currents ◽  
Plan View ◽  
X Ray ◽  
Thin Film Capacitors ◽  
Transmission Electron ◽  
Tensile Strains

AbstractPulsed Laser Deposition was used to grow Pb(Mg1/3Nb2/3)O3 (PMN) thin film planar capacitor structures. PMN crystallography was verified by x-ray diffraction and plan-view Transmission Electron Microscopy (TEM). Capacitance of the thin film structures was measured as a function of temperature and frequency. Leakage current was also measured for each capacitor. A DC field was subsequently applied and crystallographic strain was monitored in-situ by X-ray diffraction. The electromechanical strain was found to strongly depend on the deposition conditions for each capacitor. Tensile strains of ∼0.2% and compressive strains of ∼0.3% parallel to the applied field were measured for capacitors of different oxygen contents and thicknesses. We propose that the compressive strain is caused by the combined effect of joule heating of the capacitor structure, caused by large leakage currents, and epitaxial coupling between substrate and films. Electrostrictive tensile strains are of the same order as observed inbulk.

Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide

2006 ◽  
Vol 911 ◽  
Author(s):  
Zhaoxu Tian ◽  
Nathaniel R Quick ◽  
Aravinda Kar
Keyword(s):  
Silicon Carbide ◽  
Energy Dispersive Spectrometry ◽  
Solid Phase ◽  
Pin Diode ◽  
Carbon Incorporation ◽  
Pin Diodes ◽  
X Ray ◽  
Transmission Electron ◽  
Diffusion Technique ◽  
Doping Technique

AbstractA laser solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectrometry (XEDS) analysis showed that the thickness of endolayer is about 100 nm. High resolution transmission electron microscopy (HREM) images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. The resistivity of the endolayer was 1.1 ¡Á105 &#61527;&#8226;cm and 9.4 ¡Á104 &#61527;&#8226;cm after annealing at 1000&#61616;C for 10 min. These resistivities provide device isolation for many applications. The silicon carbide endolayer was doped with aluminum using a laser doping technique to create p-region on the top surface of the endolayer in order to fabricate PIN diodes.

BIC Formation and Boron Diffusion in Relaxed Si0.8Ge0.2

2004 ◽  
Vol 810 ◽  
Author(s):  
R. T. Crosby ◽  
L. Radic ◽  
K. S. Jones ◽  
M. E. Law ◽  
P.E. Thompson ◽  
...  
Keyword(s):  
Surface Region ◽  
Extended Defects ◽  
Defect Structures ◽  
Boron Diffusion ◽  
Plan View ◽  
Near Surface ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Ion Implanted

ABSTRACTThe relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.25 [.proportional]m into the substrate, as well as boron marker layers positioned 0.50 [.proportional]m below the surface. The boron well concentrations are as follows: 0, 7.5×1018, 1.5×1019, and 5.0×1019 atoms/cm3. The boron marker layers are approximately 3 nm wide and have a peak concentration of 5×1018 atoms/cm3. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014 atoms/cm2 and subsequently annealed at 675°C and 750°C for various times. Plan-view Transmission Electron Microscopy (PTEM) was used to monitor the agglomeration of injected silicon interstitials and the evolution of extended defects in the near surface region. Secondary Ion Mass Spectroscopy (SIMS) concentration profiles facilitated the characterization of boron diffusion behaviors during annealing. Interstitial supersaturation conditions and the resultant defect structures of ion implanted relaxed Si0.8Ge0.2 in both the presence and absence of boron have been characterized.

Strain Relaxation in GaAs on Si by Two Groups of Misfit Dislocations

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Tamura ◽  
T. Saitoh ◽  
T. Yodo
Keyword(s):  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Plan View ◽  
Partial Dislocations ◽  
Group I ◽  
Transmission Electron ◽  
Before And After ◽  
Gaas Films

ABSTRACTHigh-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (001) as a function of film thicknesses and observation directions between two orthogonal <110> directions before and after annealing. Two groups of misfit dislocations are characterized by analyzing whether their extra half planes exist in the film and the substrate side. The group I misfit dislocations due to a stress caused by a lattice misfit between GaAs and Si consist of partial and, 60° and 90° complete dislocations in an as-grown state. After annealing partial dislocations almost disappear and 90° perfect dislocations are predominantly observed. The group II misfit dislocations due to a thermal-expansion misfit-induced stress are all of the 60° type complete dislocations, independent of film thickness and annealing.

A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 357-364
Author(s):  
S. Peripolli ◽  
Marie France Beaufort ◽  
David Babonneau ◽  
Sophie Rousselet ◽  
P.F.P. Fichtner ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
Inert Gases ◽  
Extended Defects ◽  
Cross Sectional ◽  
Plan View ◽  
New Approach ◽  
X Ray ◽  
Implantation Temperature ◽  
X Ray Scattering ◽  
Transmission Electron

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

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