Fungi-Derived Pigments for Sustainable Organic (Opto)Electronics

MRS Advances ◽  
2018 ◽  
Vol 3 (59) ◽  
pp. 3459-3464 ◽  
Author(s):  
Gregory Giesbers ◽  
Jonathan Van Schenck ◽  
Sarath Vega Gutierrez ◽  
Sara Robinson ◽  
Oksana Ostroverkhova
Keyword(s):  
Amorphous Polymer ◽  
Aggregate Formation ◽  
Charge Generation ◽  
Solution Deposition ◽  
Current Voltage ◽  
Optical And Electronic Properties ◽  
Current Voltage Characteristics ◽  
Space Charge Limited Currents ◽  
Deposition Techniques ◽  
Potential Use

ABSTRACTWe present on the optical and electronic properties of a fungi-derived pigment xylindein for potential use in (opto)electronic applications. Optical absorption spectra in solutions of various concentrations and in film are compared and are consistent with aggregate formation in concentrated solutions and films. In order to improve film morphology obtained by solution deposition techniques, an amorphous polymer PMMA was introduced to xylindein to form xylindein:PMMA blends. Current-voltage characteristics and hole mobilities extracted from space-charge limited currents were found to be comparable between pristine xylindein and xylindein:PMMA films. Side by side comparison of the photoresponse of pristine xylindein and xylindein:PMMA films at 633 nm revealed an increase in the photosensitivity in xylindein:PMMA films due to the improved morphology favouring enhanced charge generation.

Electrical Injection and Transport in Films of Semiconductor Nanocrystals

1999 ◽  
Vol 571 ◽  
Author(s):  
D.S. Ginger ◽  
N.C. Greenham
Keyword(s):  
Semiconductor Nanocrystals ◽  
Cdse Nanocrystals ◽  
Temperature Dependent ◽  
Metal Electrodes ◽  
Current Voltage ◽  
Disordered Films ◽  
Effective Mobility ◽  
Current Voltage Characteristics ◽  
Space Charge Limited Currents ◽  
Effective Carrier

ABSTRACTWe study injection and transport in thin disordered films of CdSe nanocrystals between metal electrodes, We investigate the current-voltage characteristics of these devices as a function of electrode material, nanocrystal size, and temperature. We also measure the photocurrent response of these devices, and find that the photocurrent action spectra follow the quantum-confined absorption spectra of the nanocrystals. For dissimilar top and bottom electrodes, we find that the devices are highly rectifying. By studying space charge limited currents in these devices, we are able to place a lower bound on the effective carrier mobility in such films, and we find that the effective mobility is strongly field dependent. We find that the conductivity is strongly temperature dependent, and is qualitatively consistent with an activated hopping process at temperatures above 180 K.

Solution deposition processing and electrical properties of Ba(Ti1−xSnx)O3 thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 2933-2939 ◽  
Author(s):  
Ki Hyun Yoon ◽  
Ji Hoon Park ◽  
Jae Hyuk Jang
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Phase Evolution ◽  
Deposition Process ◽  
Solution Deposition ◽  
Maximum Value ◽  
Pure Perovskite Phase ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Current Behavior

Ba(Ti1−xSnx)O3 (0 ≤ x ≤ 0.3) thin films were deposited on a platinized silicon substrate by a solution deposition process with methoxyethanol, water, and propylene glycol as solvents. Dielectric properties and current–voltage characteristics of the thin films were investigated in conjunction with phase evolution and microstructures by varying heating temperatures and Sn contents (x). Thin films annealed above 700 °C showed a pure perovskite phase with nanoscaled grains (20–30 nm). The dielectric constant of the thin films depended on the Sn content and showed a maximum value of 330 at x = 0.15. The leakage current behavior of an optimum composition corresponding to x = 0.15 was examined by correlating with charge transport mechanisms. Schottky emission was found to be predominant at voltages less than 6.8 V, and Fowler–Nordheim tunneling appeared to be responsible above 6.8 V. The Schottky barrier of the Ba(Ti0.85Sn0.15)O3–Pt interface was determined to be 1.49 eV.

Space-Charge-Limited Currents in n-i-n Devices Incorporating Glow-Discharge and Hot-Wire Deposited a-Si:H

1997 ◽  
Vol 467 ◽  
Author(s):  
Edith C. Molenbroek ◽  
C. H. M. Van Der Werf ◽  
K. F. Feenstra ◽  
F. Rubinelli ◽  
R. E. I. Schropp
Keyword(s):  
Space Charge ◽  
Defect Layer ◽  
Negative Bias ◽  
Hot Wire ◽  
Interface Defects ◽  
Current Voltage ◽  
Large Asymmetry ◽  
Current Voltage Characteristics ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

ABSTRACTSpace-charge-limited currents have been examined in a wide variety of n-i-n devices. If the devices were completely symmetric, the current-voltage characteristics would be identical for positive and negative bias, but in several devices differences between the two polarities were observed. In order to understand in which part of the device these differences originate, the influence of the contacts and interfaces on the JV characteristics were examined by using different metal top contacts, different n-layers and different i-layers. Ag and Al top contacts gave minor differences between the polarities, whereas with Cr contacts no differences were observed. Incorporation of a defect layer in the i-layer results in asymmetric JV curves. We have observed a small asymmetry in an experimental device, and a large asymmetry using AMPS modeling. N-i-n devices appear to be a sensitive probe for interface defects.

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