CVD Growth of Monolayer MoS2 on Sapphire Substrates by using MoO3 Thin Films as a Precursor for Co-Evaporation

ABSTRACTScalable synthesis of two-dimensional molybdenum disulfide (MoS2) via chemical vapor deposition (CVD) is of considerable interests for many applications in electronics and optoelectronics. Here, we investigate the CVD growth of MoS2 single crystals on sapphire substrates by using thermally evaporated molybdenum trioxide (MoO3) thin films as molybdenum (Mo) source instead of conventionally used MoO3 powder for co-evaporation synthesis. The MoO3 thin film source provides uniform Mo vapor pressure in the growth chamber resulting in clean and reproducible MoS2 triangles without any oxide or oxysulfide species. Scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy and atomic force microscopy characterization were performed to characterize the growth results. Very high photoluminescence (PL) response was observed at 1.85 eV which is a good implication of high optical quality of these crystals directly grown on sapphire substrate.

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Elucidation of the growth mechanism of MoS2 during the CVD process

MRS Advances ◽

10.1557/adv.2018.660 ◽

2018 ◽

Vol 4 (10) ◽

pp. 581-586 ◽

Cited By ~ 1

Author(s):

Sajeevi S Withanage ◽

Mike Lopez ◽

Wasee Sameen ◽

Vanessa Charles ◽

Saiful I Khondaker

Keyword(s):

Molybdenum Trioxide ◽

Chemical Vapor ◽

Second Step ◽

Force Microscopy ◽

Atomic Force ◽

Lack Of Control ◽

Before And After ◽

Cvd Growth ◽

Microscopy Characterization ◽

Atomic Force Microscopy Characterization

ABSTRACTChemical vapor deposition (CVD) growth of two-dimensional molybdenum disulfide (MoS2) using molybdenum trioxide (MoO3) and sulfur (S) powder often results in intermediate molybdenum oxy-sulfide (MoOS2) species along with MoS2 due to a lack of control over the vapor pressure required for the clean growth. Much effort has been devoted in understanding and controlling of these intermediate MoOS2 specifies. Here, we show that with a second step sulfurization at moderate temperatures, these MoOS2 crystals can be transformed to monolayer MoS2 crystals. Scanning electron microscopy, Raman and photoluminescence spectroscopy and atomic force microscopy characterization carried out before and after re-sulfurization confirm the monolayer MoS2 growth via this route. This study shows that MoOS2 formed at the intermediate state can be successfully recycled to MoS2.

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Defect distribution in ZnO thin films grown on a-plane sapphire substrates by catalytic-reaction-assisted chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2021.126206 ◽

2021 ◽

pp. 126206

Author(s):

Taro Saito ◽

Ariyuki Kato ◽

Kanji Yasui

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Catalytic Reaction ◽

Vapor Deposition ◽

Chemical Vapor ◽

Zno Thin Films ◽

Defect Distribution ◽

Sapphire Substrates

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Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽

10.1590/s0366-69132002000100009 ◽

2002 ◽

Vol 48 (305) ◽

pp. 38-42 ◽

Cited By ~ 3

Author(s):

M. I. B. Bernardi ◽

E. J. H. Lee ◽

P. N. Lisboa-Filho ◽

E. R. Leite ◽

E. Longo ◽

...

Keyword(s):

Thin Films ◽

Growth Parameters ◽

Structural Characteristics ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Tio2 Thin Films ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

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Temperature dependence of the band gap of high optical quality CdS:Dy thin films based on exciton spectra

Materials Research Express ◽

10.1088/2053-1591/aae298 ◽

2018 ◽

Vol 5 (12) ◽

pp. 125902 ◽

Cited By ~ 3

Author(s):

Yu P Gnatenko ◽

P M Bukivskij ◽

M S Furier ◽

A P Bukivskii ◽

A S Opanasyuk

Keyword(s):

Thin Films ◽

Temperature Dependence ◽

Band Gap ◽

Optical Quality ◽

High Optical Quality

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Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽

10.1039/c8ce01128a ◽

2018 ◽

Vol 20 (40) ◽

pp. 6236-6242 ◽

Cited By ~ 13

Author(s):

Y. Arata ◽

H. Nishinaka ◽

D. Tahara ◽

M. Yoshimoto

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Buffer Layer ◽

Vapor Deposition ◽

Gallium Oxide ◽

Single Phase ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

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Plasma-Assisted MOCVD Growth of ZnO Thin Films

MRS Proceedings ◽

10.1557/proc-0892-ff18-06-ee09-06 ◽

2005 ◽

Vol 892 ◽

Cited By ~ 1

Author(s):

Maria Losurdo ◽

Maria Michela Giangregorio ◽

Pio Capezzuto ◽

Giovanni Bruno ◽

Graziella Malandrino ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Optical Quality ◽

Zno Thin Films ◽

Zno Films ◽

Mocvd Growth ◽

Metalorganic Chemical

AbstractZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

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Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment

Journal of Applied Physics ◽

10.1063/1.4805026 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204102 ◽

Cited By ~ 16

Author(s):

C. Villeneuve-Faure ◽

K. Makasheva ◽

C. Bonafos ◽

B. Despax ◽

L. Boudou ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Pulsed Plasma ◽

Force Microscopy ◽

Microscopy Characterization ◽

Charging Effect

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Epitaxial Ferroelectric Oxides for Electro-Optic and Non-Linear Optical Applications

MRS Proceedings ◽

10.1557/proc-495-23 ◽

1997 ◽

Vol 495 ◽

Cited By ~ 1

Author(s):

B. W. Wessels

Keyword(s):

Thin Films ◽

Chemical Vapor ◽

Optical Quality ◽

Guided Wave ◽

Epitaxial Thin Films ◽

Electro Optic ◽

Non Linear ◽

Linear Optical ◽

Optical Applications ◽

Ferroelectric Oxides

ABSTRACTFerroelectric oxide epitaxial thin films are potentially important for a variety of guided-wave electro-optic and non-linear optical applications. Metalorganic chemical vapor deposition has been used to synthesize epitaxial thin films of a number of ferroelectric oxides. The films now have sufficient optical quality to enable the fabrication of waveguide devices including electro-optic modulators and optical amplifiers for 1.54 microns.

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