Light-enhanced Electrochemical Energy Storage of Synthetic Melanin on Conductive Glass Substrates

MRS Advances ◽  
2019 ◽  
Vol 5 (27-28) ◽  
pp. 1441-1448
Author(s):  
Ri Xu ◽  
Abdelaziz Gouda ◽  
Maria Federica Caso ◽  
Francesca Soavi ◽  
Clara Santato

ABSTRACTEumelanin is a redox active, quinone-based biopigment, featuring a broad band absorption in the UV-Vis region. The combination of the redox and optical properties makes eumelanin an interesting candidate to explore light-assisted storage technologies. Electrodes of melanin on indium tin oxide (ITO) current collectors were investigated for their morphological and voltammetric characteristics in aqueous electrolytes. Under solar light, we observed that the capacity and the capacitance of the melanin electrodes significantly increase with respect to the dark conditions (by 63% and 73%, respectively).

Biosensors ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 118
Author(s):  
Rodica Ionescu ◽  
Raphael Selon ◽  
Nicolas Pocholle ◽  
Lan Zhou ◽  
Anna Rumyantseva ◽  
...  

Conductive indium-tin oxide (ITO) and non-conductive glass substrates were successfully modified with embedded gold nanoparticles (AuNPs) formed by controlled thermal annealing at 550 °C for 8 h in a preselected oven. The authors characterized the formation of AuNPs using two microscopic techniques: scanning electron microscopy (SEM) and atomic force microscopy (AFM). The analytical performances of the nanostructured-glasses were compared regarding biosensing of Hsp70, an ATP-driven molecular chaperone. In this work, the human heat-shock protein (Hsp70), was chosen as a model biomarker of body stress disorders for microwave spectroscopic investigations. It was found that microwave screening at 4 GHz allowed for the first time the detection of 12 ng/µL/cm2 of Hsp70.


Open Physics ◽  
2005 ◽  
Vol 3 (3) ◽  
Author(s):  
Abdoljavad Novinrooz ◽  
Masoomeh Sharbatdaran ◽  
Hassan Noorkojouri

AbstractThin layers of tungsten trioxide have been prepared from an aqueous solution of peroxotungstic acid (PTA) using the sol-gel method. Compositional, structural and optical characteristics of WO3 coated on indium tin oxide (ITO) conductive glass substrates were studied using X-ray diffractometery (XRD), cyclic voltammetery (CV), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Monoclinic and triclinic crystalline structures for thin film and powdered WO3 were confirmed by XRD analysis. SEM micrograph of annealed samples revealed micro cracks due to a decrease in density and a contraction of layers. EDX analysis showed that 1∶2 ratio of oxygen and tungsten atoms in the prepared films is obtained at heat treatment temperatures higher than 200 °C. Furthermore, the annealed samples showed very good electrochromic behavior in cyclic voltammetery studies. Refractive index “n” and extinction coefficient “k” values were found to be reduced by increasing the wavelength and decreasing the temperature.


2009 ◽  
Vol 1 (2) ◽  
pp. 18-20
Author(s):  
Dahyunir Dahlan

Copper oxide particles were electrodeposited onto indium tin oxide (ITO) coated glass substrates. Electrodeposition was carried out in the electrolyte containing cupric sulphate, boric acid and glucopone. Both continuous and pulse currents methods were used in the process with platinum electrode, saturated calomel electrode (SCE) and ITO electrode as the counter, reference and working electrode respectively. The deposited particles were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that, using continuous current deposition, the deposited particles were mixture of Cu2O and CuO particles. By adding glucopone in the electrolyte, particles with spherical shapes were produced. Electrodeposition by using pulse current, uniform cubical shaped Cu2O particles were produced


2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.


2008 ◽  
Vol 492 (2) ◽  
pp. 585-592 ◽  
Author(s):  
J.-M. Désert ◽  
A. Vidal-Madjar ◽  
A. Lecavelier des Etangs ◽  
D. Sing ◽  
D. Ehrenreich ◽  
...  

2019 ◽  
Vol 238 ◽  
pp. 107-111
Author(s):  
Nahla Omer ◽  
Fayin Zhang ◽  
Kaibing Xu ◽  
Gang Zhao ◽  
Shanyi Guang ◽  
...  
Keyword(s):  

Author(s):  
Tilman Beierlein ◽  
S. Strite ◽  
A. Dommann ◽  
D. J. Smith

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x < 0.5. The microstructure observed by TEM of InGaN films deposited on unheated substrates is highly columnar, with typical column widths of ~10 nm. The optical absorption spectra of InGaN/glass have a distinct absorption edge at the bandgap, but also high background absorption in the bandgap. InxGa1−xN grown on glass (x > 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistance.


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