Electrodeposition of Cu2O Particles by Using Electrolyte Solution Containing Glucopone as Surfactant

2009 ◽  
Vol 1 (2) ◽  
pp. 18-20
Author(s):  
Dahyunir Dahlan
Keyword(s):  
Indium Tin Oxide ◽  
Pulse Current ◽  
Platinum Electrode ◽  
Saturated Calomel Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Continuous Current ◽  
Oxide Particles ◽  
Cupric Sulphate

Copper oxide particles were electrodeposited onto indium tin oxide (ITO) coated glass substrates. Electrodeposition was carried out in the electrolyte containing cupric sulphate, boric acid and glucopone. Both continuous and pulse currents methods were used in the process with platinum electrode, saturated calomel electrode (SCE) and ITO electrode as the counter, reference and working electrode respectively. The deposited particles were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that, using continuous current deposition, the deposited particles were mixture of Cu2O and CuO particles. By adding glucopone in the electrolyte, particles with spherical shapes were produced. Electrodeposition by using pulse current, uniform cubical shaped Cu2O particles were produced

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Growth and Characterisation of Ag2S Films on ZnS/Indium-Tin-Oxide Coated Glass

2013 ◽  
Vol 721 ◽  
pp. 33-36 ◽  
Author(s):  
Hong Cheng Pan ◽  
Xue Peng Li ◽  
Wei Hong Liu ◽  
Yan Bin Ren
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Phosphate Buffer Solution ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Buffer Solution ◽  
Solution Ph ◽  
X Ray ◽  
Coated Glass ◽  
Glass Substrates

ZnS thin films were deposited on indium–tin-oxide (ITO) coated glass substrates by a chemical bath deposition method. Then the ZnS/ITO slides were immersed in the solution containing 6 mM phosphate buffer solution (pH 7.4), sodium polyacrylate (0.01% w/w), and 0.24 mM AgNO3 at 37°C for 3 h to growth Ag2S films on the surface of ZnS/ITO slides. The absorption band of Ag2S/ZnS/ITO slide displays a considerably blue-shifted. The X-ray diffraction analysis demonstrated the presence of acanthite Ag2S on the surface of ZnS/ITO slides, which is consistent with the cyclic voltammetic data.

Co-Electrodeposition and Characterization of Ag-Ag2S-PbS Thin Films on Indium-Tin-Oxide Coated Glass

2014 ◽  
Vol 900 ◽  
pp. 397-400 ◽  
Author(s):  
Yuan Ming Zhang ◽  
Lin Chen ◽  
Hong Cheng Pan
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ethylenediaminetetraacetic Acid ◽  
Disodium Salt ◽  
Metallic Silver ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coated Glass ◽  
Glass Substrates

The Ag-Ag2S-PbS thin films were co-electrodeposited on indium-tin-oxide (ITO) coated glass substrates from aqueous solutions containing 0.01 M AgNO3, 0.01 M Pb (NO3)2, 0.1 M Na2S2O3, 0.02 M ethylenediaminetetraacetic acid disodium salt, and 0.5 M Na2SO4. X-ray diffraction (XRD), scanning electron microscopy (SEM), and cyclic voltammetry (CV) were used to investigate the Ag-Ag2S-PbS thin films. The X-ray diffraction analysis demonstrated the presence of cubic structure of metallic silver, acanthite Ag2S, and cubic PbS, which is consistent with the CV analysis. The effect of different Ag+/Pb2+ratios on the morphology and composition of the Ag-Ag2S-PbS thin films were also studied.

Preparation and Characterization of Electrodeposited CuxBi2Te3 Thermoelectric Films

2014 ◽  
Vol 787 ◽  
pp. 205-209
Author(s):  
Yue Chao Hu ◽  
Zhi Gang Zou ◽  
Ke Feng Cai
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Electro Deposition ◽  
X Ray ◽  
Glass Substrates ◽  
Higher Power

CuxBi2Te3films were prepared by chronopotentiometry electro-deposition on indium tin oxide (ITO)-coated glass substrates from an aqueous acidic electrolyte at room temperature. The films were deposited at the same current density but in electrolyte with different Cu2+concentrations: 0.1, 0.25, 0.5, 0.75 or 1mM. The phase composition and morphology of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and field emission scanning electron microscope, respectively. The electrical conductivity and Seebeck coefficient of the CuxBi2Te3films were measured after being transferred onto a non-conductive rubberized fabric support. All the films showed n-type conduction with Seebeck coefficient in the range of-63 to-84μV/K, and the electrical conductivity in the range of 90 to 185S/cm. The film deposited from an electrolyte with 0.5mM Cu2+showed higher power factor ~130 μW/K-2m-1.

scholarly journals Growth of the Electrodeposited NiX2 (X= Te, Se) Thin Films

2020 ◽  
pp. 55-69
Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Compositional Analysis ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Potential Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
P Type

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.

The Role of Sputter Pressure in Influencing Electrical and Optical Properties of ITO on Glass

2010 ◽  
Vol 1256 ◽  
Author(s):  
Shereen Elhalawaty ◽  
Karthik Sivaramakrishnan ◽  
Theodore David ◽  
Terry L Alford
Keyword(s):  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Visible Spectrum ◽  
Rf Magnetron Sputtering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Effect Measurements

AbstractThin layers of indium tin oxide (ITO) were deposited onto glass substrates by RF magnetron sputtering with the pressure varying from 6 mTorr to 15 mTorr. The films were annealed in a reducing atmosphere at 500 °C for 30 minutes. Sheet resistance was determined by four-point-probe measurement. Resistivity, mobility, and carrier concentration were obtained by Hall effect measurements. Transmission of the films in the visible spectrum was determined by photospectrometry. The structure of the films was characterized by X-ray diffraction. X-ray photoelectron spectroscopy was used to determine the oxidation state of Sn, which was used to determine the fraction of active tin clusters. The effect of additional anneals was investigated. The results reveal that the lowest resistivity obtained was 1.69×10-4 -cm at 9 mTorr and the highest transmittance of 90% was obtained after a second anneal. However, the second anneal decreased the mobility and conductivity for high sputter pressures.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

scholarly journals Properties of InGaN deposited on Glass at Low Temperature

1997 ◽  
Vol 2 ◽  
Author(s):  
Tilman Beierlein ◽  
S. Strite ◽  
A. Dommann ◽  
D. J. Smith
Keyword(s):  
Low Temperature ◽  
Indium Tin Oxide ◽  
High Electron ◽  
Transparent Conductor ◽  
High Background ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
High Electron Concentration ◽  
Background Absorption

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x < 0.5. The microstructure observed by TEM of InGaN films deposited on unheated substrates is highly columnar, with typical column widths of ~10 nm. The optical absorption spectra of InGaN/glass have a distinct absorption edge at the bandgap, but also high background absorption in the bandgap. InxGa1−xN grown on glass (x > 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistance.

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