Extrinsic contributions to the grain size dependence of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3: PbTiO3 ceramics

1993 ◽  
Vol 8 (4) ◽  
pp. 880-884 ◽  
Author(s):  
C.A. Randall ◽  
A.D. Hilton ◽  
D.J. Barber ◽  
T.R. Shrout
Keyword(s):  
Grain Size ◽  
Empirical Method ◽  
Dielectric Behavior ◽  
Brick Wall ◽  
Tem Analysis ◽  
Dielectric Characterization ◽  
Grain Sizes ◽  
Transmission Electron ◽  
Semi Empirical ◽  
Pbtio3 Ceramics

This paper addresses the observed grain size with dependence of the dielectric behavior for Pb(Mg1/3Nb2/3)O3: PbTiO3 ceramics grain sizes ≥ 1.0 μm. A combined transmission electron microscopy (TEM) analysis and dielectric characterization are modeled with a modified brick wall approach. From this model, it is possible to extrapolate information such as single crystal values of dielectric maximum, Kmax, the diffuseness coefficient, δ, and the average intergranular thickness for relaxor ceramics. The calculated intergranular thickness agrees well with TEM observations, ≍2.0 nm. This semi-empirical method may be potentially useful in development work of relaxor ceramics to predict the optimized dielectric properties obtainable within microstructural restrictions.

Stability of Ruthenium-Silica Bilayer Structures

1994 ◽  
Vol 343 ◽  
Author(s):  
Zara Weng-Sieh ◽  
Tai. D. Nguyen ◽  
Ronald Gronsky
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Grain Growth ◽  
Original Film ◽  
Grain Sizes ◽  
Transmission Electron ◽  
20 Nm ◽  
Spherical Grains ◽  
Deposited Films

ABSTRACTThe microstructural evolution of ruthenium-silicon dioxide bilayer structures upon annealing is studied using transmission electron microscopy. SiO2/Ru/SiO2 structures, with thicknesses of 2/1/2 nm, 4/2/4 nm, 8/4/8 nm, and 20/10/20 nm, are formed by magnetron sputtering and annealed at 300 or 600°C. As-deposited films have grain sizes on the order of the Ru film thickness. After annealing at 600°C, significant grain growth is observed for all thicknesses, such that the final grain sizes are approximately 3 to 20x greater than the original film thickness. The largest increase in the average Ru grain size is observed for the 2 nm thick ruthenium film possibly due to the coalescence of Ru grains. The coalescence of the Ru particles in the 1 and 2 nm thick films results in the formation of lamellar Ru grains, which disrupts the contiguity of the Ru film. In all other cases, the increase in grain size is attributed to normal grain growth, but the formation of anomalous spherical grains is also observed.

Grain Size Effect on Deformation Twinning and De-Twinning in a Nanocrystalline Ni-Fe Alloy

2010 ◽  
Vol 667-669 ◽  
pp. 181-186 ◽  
Author(s):  
Song Ni ◽  
Yan Bo Wang ◽  
Xiao Zhou Liao ◽  
Saleh N. Alhajeri ◽  
H.Q. Li ◽  
...  
Keyword(s):  
Grain Size ◽  
Size Effect ◽  
High Pressure Torsion ◽  
Deformation Twinning ◽  
Grain Size Effect ◽  
Grain Sizes ◽  
Transmission Electron ◽  
Average Grain Size ◽  
Study Results ◽  
Electrochemically Deposited

The effect of grain size on the deformation twinning and de-twinning in a nanocrystalline Ni-Fe alloy was investigated using transmission electron microscopy. Specimens with different grain sizes were obtained by severely deforming an electrochemically deposited nanocrystalline Ni-20wt.% Fe alloy using high-pressure torsion, which resulted in continuous grain growth from an average grain size of ~ 21 nm in the as-deposited material to ~ 72 nm for the highest strain applied in this study. Results show that deformation de-twinning occurs at very small grain sizes while deformation twinning takes place when the grain size is larger than ~ 45 nm. The mechanism of the observed grain size effect on twinning and de-twinning is briefly discussed.

Grain Size Relationships between the Magnetic Layer and the Underlayers in CoCrPtTa Recording Media

2000 ◽  
Vol 614 ◽  
Author(s):  
Kai Ma ◽  
Robert Sinclair ◽  
Gerardo Bertero ◽  
Wei Cao
Keyword(s):  
Grain Size ◽  
Magnetic Layer ◽  
Recording Media ◽  
Processing Conditions ◽  
Magnetic Recording Media ◽  
Electron Microscopic ◽  
Grain Sizes ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
The Relationship

ABSTRACTThis article presents a transmission electron microscopic (TEM) investigation of the relationship between the magnetic and underlayer grain sizes in CoCrPtTa/CrMo longitudinal magnetic recording media. A great deal of effort has been expended on decreasing the underlayer grain size in order to decrease that of the magnetic layer. However, our results show that the two grain sizes may not always correlate. When the underlayer (CrMo) grains are sufficiently small, the magnetic layer (CoCrPtTa) grain size does not necessarily decrease with further underlayer grain size reduction. By carefully controlling the processing conditions, CrMo grain sizes were made to vary from 16nm down to 10nm. However, the corresponding CoCrPtTa grain sizes remained nearly the same. As the underlayer grain size decreased, the ratio of magnetic to underlayer grain size increased from 0.9 to 1.4.

Aspects of microanalysis in a transmission electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 510-511
Author(s):  
R. Sinclair ◽  
B.E. Jacobson
Keyword(s):  
Grain Size ◽  
Electron Beam ◽  
Electron Microscope ◽  
Chemical Analysis ◽  
Transmission Electron Microscope ◽  
Vapor Deposition ◽  
Critical Currents ◽  
X Ray ◽  
Fine Grain ◽  
Transmission Electron

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).

TEM Analysis of Long-Period Polytypes in SiC—S

1976 ◽  
Vol 34 ◽  
pp. 630-631
Author(s):  
S. Shinozaki ◽  
J. W. Sprys
Keyword(s):  
Electron Diffraction ◽  
Isothermal Annealing ◽  
Tem Analysis ◽  
Long Period ◽  
Transmission Electron ◽  
Average Grain Size ◽  
High Resolution Tem ◽  
Structural Lattice ◽  
The Stability ◽  
Continuous Curves

In reaction sintered SiC (∽ 5um average grain size), about 15% of the grains were found to have long-period structures, which were identifiable by transmission electron microscopy (TEM). In order to investigate the stability of the long-period polytypes at high temperature, crystal structures as well as microstructural changes in the long-period polytypes were analyzed as a function of time in isothermal annealing.Each polytype was analyzed by two methods: (1) Electron diffraction, and (2) Electron micrograph analysis. Fig. 1 shows microdensitometer traces of ED patterns (continuous curves) and calculated intensities (vertical lines) along 10.l row for 6H and 84R (Ramsdell notation). Intensity distributions were calculated based on the Zhdanov notation of (33) for 6H and [ (33)3 (32)2 ]3 for 84R. Because of the dynamical effect in electron diffraction, the observed intensities do not exactly coincide with those intensities obtained by structure factor calculations. Fig. 2 shows the high resolution TEM micrographs, where the striped patterns correspond to direct resolution of the structural lattice periodicities of 6H and 84R structures and the spacings shown in the figures are as expected for those structures.

Transmission Electron Microscopy of an Aluminum-Silver-Stainless Steel Solid State Bond

1985 ◽  
Vol 43 ◽  
pp. 172-173
Author(s):  
M. J. Carr ◽  
J. F. Shewbridge ◽  
T. O. Wilford
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Specimen Preparation ◽  
Dimensional Control ◽  
Tem Analysis ◽  
Metal Parts ◽  
Dissimilar Metal ◽  
Transmission Electron ◽  
Short Time

Strong solid state bonds are routinely produced between physical vapor deposited (PVD) silver coatings deposited on sputter cleaned surfaces of two dissimilar metal parts. The low temperature (200°C) and short time (10 min) used in the bonding cycle are advantageous from the standpoint of productivity and dimensional control. These conditions unfortunately produce no microstructural changes at or near the interface that are detectable by optical, SEM, or microprobe examination. Microstructural problems arising at these interfaces could therefore easily go undetected by these techniques. TEM analysis has not been previously applied to this problem because of the difficulty in specimen preparation. The purpose of this paper is to describe our technique for preparing specimens from solid state bonds and to present our initial observations of the microstructural details of such bonds.

Modeling the Effects of O-sulfonation on the CID of Serine

2020 ◽  
Author(s):  
Kenneth Lucas ◽  
George Barnes
Keyword(s):  
Sulfo Group ◽  
High Energy ◽  
Empirical Method ◽  
Side Chain ◽  
Energy Structure ◽  
Direct Dynamics ◽  
Theoretical Mass ◽  
Intermolecular Proton Transfer ◽  
Dynamics Simulations ◽  
Semi Empirical

We present the results of direct dynamics simulations and DFT calculations aimed at elucidating the effect of \textit{O}-sulfonation on the collision induced dissociation for serine. Towards this end, direct dynamics simulations of both serine and sulfoserine were performed at multiple collision energies and theoretical mass spectra obtained. Comparisons to experimental results are favorable for both systems. Peaks related to the sulfo group are identified and the reaction dynamics explored. In particular, three significant peaks (m\z 106, 88, and 81) seen in the theoretical mass spectrum directly related to the sulfo group are analyzed as well as major peaks shared by both systems. Our analysis shows that the m\z 106 peaks result from intramolecular rearrangements, intermolecular proton transfer among complexes composed of initial fragmentation products, and at high energy side-chain fragmentation. The \mz 88 peak was found to contain multiple constitutional isomers, including a previously unconsidered, low energy structure. It was also seen that the RM1 semi empirical method was not able to obtain all of the major peaks seen in experiment for sulfoserine. In contrast, PM6 did obtain all major experimental peaks.

Theoretical investigation of Ramachandran plot of N-formyl-L-alanine-amide

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Genetic Algorithm ◽  
Theoretical Investigation ◽  
Energy Analysis ◽  
Empirical Method ◽  
Conformational Space ◽  
Ramachandran Plot ◽  
Global Minima ◽  
Reasonable Time ◽  
Semi Empirical

The full conformational space of N-formyl-L-alanine-amide was explored by the semi-empirical method AM1 coupled to the Multi Niche Crowding (MNC) genetic algorithm implemented in a package of programs developed in our laboratory. The structural and energy analysis of the resulting conformational space E(,ψ) exhibits 5 regions or minima ɣL, ɣD, ɛL, D and αD. The technique provides better detection of local and global minima within a reasonable time.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Utilizing Nanoprobing and Circuit Diagnostics to Identify Key Failure Mechanism of Otherwise Nonvisible Defects in 20 nm Logic Devices

2014 ◽  
Author(s):  
M.K. Dawood ◽  
C. Chen ◽  
P.K. Tan ◽  
S. James ◽  
P.S. Limin ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Contact Layer ◽  
Fault Isolation ◽  
Tem Analysis ◽  
Logic Devices ◽  
Technology Advancement ◽  
Transmission Electron ◽  
Voltage Contrast ◽  
Almost All ◽  
20 Nm

Abstract In this work, we present two case studies on the utilization of advanced nanoprobing on 20nm logic devices at contact layer to identify the root cause of scan logic failures. In both cases, conventional failure analysis followed by inspection of passive voltage contrast (PVC) failed to identify any abnormality in the devices. Technology advancement makes identifying failure mechanisms increasingly more challenging using conventional methods of physical failure analysis (PFA). Almost all PFA cases for 20nm technology node devices and beyond require Transmission Electron Microscopy (TEM) analysis. Before TEM analysis can be performed, fault isolation is required to correctly determine the precise failing location. Isolated transistor probing was performed on the suspected logic NMOS and PMOS transistors to identify the failing transistors for TEM analysis. In this paper, nanoprobing was used to isolate the failing transistor of a logic cell. Nanoprobing revealed anomalies between the drain and bulk junction which was found to be due to contact gouging of different severities.

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