A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
W. G. Bi ◽  
X. B. Mei ◽  
K. L. Kavanagh ◽  
C. W. Tu ◽  
E. A. Stach ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Gas Source ◽  
Transmission Electron ◽  
Lt Gaas

AbstractWe report the effects of growth conditions on the strain and crystalline quality of lowtemperature (LT) grown GaP films by gas-source molecular beam epitaxy. At temperatures below 160 °C, poly-crystalline GaP films are always obtained, regardless of the PH3 low rate used, while at temperatures above 160 °C, the material quality is affected by the PH3 flow rate. Contrary to compressively strained LT GaAs, high-resolution X-ray rocking curve measurement indicates a tensile strain of the LT GaP films, which is considered to be due to PGa antisite defects. The strain is found to be affected by the PH3 flow rate, the growth temperature, and post-growth annealing. Contrary to LT GaAs, no P precipitates are observed in cross-sectional transmission electron microscopy.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

1998 ◽  
Vol 191 (1-2) ◽  
pp. 34-38
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianping Zhang ◽  
Shirong Zhu ◽  
Meiying Kong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Gas Source

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

2000 ◽  
Vol 220 (4) ◽  
pp. 461-465 ◽  
Author(s):  
F. Gao ◽  
D.D. Huang ◽  
J.P. Li ◽  
Y.X. Lin ◽  
M.Y. Kong ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Gas Source

Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
G. Popovici ◽  
G. Y. Xu ◽  
A. Botchkarev ◽  
W. Kim ◽  
H. Tang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Longitudinal Optical ◽  
Raman Shift ◽  
Longitudinal Optical Phonon ◽  
Photoluminescence Peak ◽  
Mg Doped

ABSTRACTRaman, photoluminescence, and Hall measurements are reported for Mg doped GaN films grown by molecular beam epitaxy. The compressive and tensile stress determined by the Raman shift of the phonon lines is due to the growth conditions rather than the presence of Mg in the film. The photoluminescence peak of near band-to-band transitions is also shifted to larger (smaller) energies by the compressive (tensile) stress. The study of the longitudinal optical phonon of the Ai branch shows that its Raman line shape is affected not only by phonon-plasmon interactions but by the crystalline quality of the film, as well.

Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers

1993 ◽  
Vol 51 ◽  
pp. 800-801
Author(s):  
M.W. Bench ◽  
T.J. Miller ◽  
M.I. Nathan ◽  
C.B. Carter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Barrier Height ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Growth Conditions ◽  
High Energy ◽  
Exact Nature ◽  
Interfacial Layers ◽  
Transmission Electron ◽  
Layer Structures

It has been shown in previous reports that barrier height variations can be achieved in GaAs Schottky diodes grown using molecular beam epitaxy by utilizing a thin epitaxial Si layer (a few monolayers) between the GaAs and the Al contact. The effective barrier height was found to be dependent on the thickness and growth conditions of the Si layer. However, there has remained a question as to the exact nature of the interfacial Si layer. In the present investigation, samples with different Si layer thicknesses (no Si, 6 Å Si, and 20 Å Si, as determined in situ during growth using reflection high energy electron diffraction (RHEED)) were characterized using transmission electron microscopy (TEM) to determine the nature of the Si layers. In the present study, it was also found that the presence of the interfacial Si layers affected the growth orientation and morphology of the Al layers.The layer structures investigated were grown using molecular beam epitaxy in a system described elsewhere.

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 339-343 ◽  
Author(s):  
Shota Sambonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
Sergey Filimonov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Growth Conditions ◽  
Si Substrate ◽  
Si Substrates ◽  
High Interest ◽  
Gas Source ◽  
Gas Pressures

3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20 %) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.

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