Effects of oxygen ion energy on the growth of CuO films by molecular beam epitaxy using mass-separated low-energy O+ beams

1994 ◽  
Vol 9 (5) ◽  
pp. 1280-1283 ◽  
Author(s):  
Ryusuke Kita ◽  
Kenichi Kawaguchi ◽  
Takashi Hase ◽  
Takeshi Koga ◽  
Rittaporn Itti ◽  
...  
Keyword(s):  
Kinetic Energy ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
Diffraction Reflection ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Rocking Curve ◽  
X Ray ◽  
Oxygen Ions ◽  
Oxygen Ion

We have studied the effects of the kinetic energy of mass-separated O+ beams on the growth of CuO thin films deposited on unheated MgO(001) and at 510 °C, in energy ranging from 10 to 200 eV by x-ray photoemission spectroscopy, x-ray diffraction, reflection high-energy electron diffraction, and scanning electron microscopy. The films deposited at 510 °C show a full width at the half maximum (FWHM) of 0.06°for the rocking curve through the (111) peak, regardless of the kinetic energy of oxygen ions. CuO has been epitaxially grown on MgO(001) without heating it in a vacuum of 4 × 10−7 Pa. The x-ray diffraction intensity of the CuO(111) increases with an increase in the kinetic energy of O+, and its FWHM approaches that of the CuO film grown at 510 °C. The surface morphology is improved for the films deposited on unheated substrates.

X-ray diffraction study of oxygen-conducting compoundsLn2Mo2O9(Ln= La, Pr)

2014 ◽  
Vol 70 (4) ◽  
pp. 669-675 ◽  
Author(s):  
Alexander M. Antipin ◽  
Olga A. Alekseeva ◽  
Natalia I. Sorokina ◽  
Alexandra N. Kuskova ◽  
Michail Yu. Presniakov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Ion Migration ◽  
Transmission Microscopy ◽  
Coordination Environment ◽  
X Ray ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Oxygen Ion Migration

The La2Mo2O9(LM) and Pr2Mo2O9(PM) single crystals are studied using precision X-ray diffraction and high-resolution transmission microscopy at room temperature. The crystal structures are determined in the space groupP213. La and Pr atoms, as well as Mo1 and O1 atoms, are located in the vicinity of the threefold axes rather than on the axes as in the high-temperature cubic phase. In both structures studied, the O2 and O3 positions are partially occupied. The coexistence of different configurations of the Mo coordination environment facilitates the oxygen-ion migration in the structure. Based on the X-ray data, the activation energies of O atoms are calculated and the migration paths of oxygen ions in the structures are analysed. The conductivity of PM crystals is close to that of LM crystals. The O2 and O3 atoms are the main contributors to the ion conductivity of LM and PM.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

X-Ray Diffraction Analysis of Damage and Doping Effects in Low-Dose, High-Energy Implanted Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan
Keyword(s):  
Low Dose ◽  
Bragg Reflection ◽  
High Energy ◽  
Peak Temperature ◽  
Crucial Importance ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Implantation Damage ◽  
Doping Effects

ABSTRACTHigh-Resolution X-Ray Diffraction is investigated as a technique for analysis of low-dose, high-energy implanted (001) silicon. The choice of the proper Bragg reflection for the rocking curve measurements is showed to be of crucial importance. The (026)1 reflection appears to be the most suitable for strain caused by implantation damage. By a qualitative analysis of rocking curves taken on B and P implanted Si samples, it could be established that the minimum dose, for which HR-XRD is sensitive enough, is about 1.5.1014cm−2 and 5.1013cm−2 for P and B, respectively. The necessary minimum peak temperature that was determined for a complete damage anneal with the T-RTA of P implanted Si with energies ranging from 0.5 to 1.5 MeV, was 1400 K for all doses of P considered. For B the required optimum peak temperature is about 1375 K.

Infrared and Ultraviolet Raman Spectra of AlN Thin Films Grown on Si(111)

2001 ◽  
Vol 693 ◽  
Author(s):  
V. M. Naik ◽  
D. Haddad ◽  
Y. V. Danylyuk ◽  
R. Naik ◽  
G. W. Auner ◽  
...  
Keyword(s):  
Plasma Source ◽  
High Energy ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Rocking Curve ◽  
X Ray ◽  
Near Resonance ◽  
Enhanced Raman Scattering ◽  
Alternative Techniques ◽  
The One

AbstractInfrared (IR) spectroscopy and ultraviolet near-resonance enhanced Raman scattering have been used as alternative techniques to characterize the AlN films grown on Si(111). Epitaxial AlN films have been prepared by plasma source molecular beam epitaxy (PSMBE) at growth temperatures of 400 and 650 oC. The AlN/Si grown at 650°C shows distinct reflection high-energy electron diffraction (RHEED) patterns with the following epitaxial relations: AlN [0001] ‖ Si [111], and AlN < 011 0 > ‖ Si < 112 >. This is in sharp contrast with the observation of a spotty RHEED pattern for AlN/Si sample grown at 400°C, which appeared the same when viewed along any Si azimuth. Furthermore, the X-ray diffraction (XRD) rocking curve width showed a significant reduction from 5.7ofor sample grown at 400°C to 2° for the one grown at 650°C. The observation of Raman active A1(LO) and E2, and IR active E1(TO) zone center phonons, in both the films, is in accordance with the c-axis orientation of the films. However, the observed phonon mode frequencies and line widths indicate that the AlN samples grown at 400°C have less strain but more disorder compared to the ones grown at 650°C in agreement with RHEED and XRD data.

In situ X-ray diffraction investigations during high-energy oxygen ion implantation in transition metals

Vacuum ◽  
2004 ◽  
Vol 76 (2-3) ◽  
pp. 281-285 ◽  
Author(s):  
Y. Bohne ◽  
N. Shevchenko ◽  
F. Prokert ◽  
J. von Borany ◽  
B. Rauschenbach ◽  
...  
Keyword(s):  
Transition Metals ◽  
Ion Implantation ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Epitaxy Development in thin Superconducting YBa2Cu3O7 Films

1991 ◽  
Vol 237 ◽  
Author(s):  
A. Yen ◽  
L. Li ◽  
J. D. Klein ◽  
W. B. Nowak ◽  
S. F. Cogan
Keyword(s):  
Film Thickness ◽  
High Energy ◽  
Diffraction Reflection ◽  
High Deposition Rate ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Diffraction Patterns

ABSTRACTUltrathin superconducting YBa2Cu3O7, films were grown on (100) YSZ (yttria-stabilized-zirconia) substrates by off-axis if magnetron sputtering at a relatively high deposition rate. The structure, orientation, and morphology of the films were examined by x-ray diffraction, reflection high-energy electron diffraction (RHEED), and scanning electron microscopy. X-ray diffraction patterns of films deposited on YSZ substrates exhibited strong c-axis alignment with the YBa2Cu3O7 peaks sharpening as the film thickness was increased. The degree of epitaxy apparent in RHEED photographs was found to increase dramatically as the film thickness was increased from 12 nm to 108 nm. This behavior is attributed to a nucleation and growth process in which epitaxy develops as a result of a 3 stage progression from a random to an oriented film.The films were in-situ superconducting, exhibiting superconducting transition temperatures, Tc(0)'s, of 80 K for a 12 nm film and 88 K for a 280 nm film. However, the relatively low critical current densities (Jc < 1 × 106 A/cm2) at 77 K are probably due to a lack of in-plane epitaxy.

X-ray diffraction properties of curved crystal diffractors

1992 ◽  
Vol 50 (2) ◽  
pp. 1734-1735
Author(s):  
W. Z. Chang ◽  
D. B. Wittry
Keyword(s):  
Diffraction Theory ◽  
X Rays ◽  
Diffraction Image ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Bent Crystal ◽  
Diffraction Geometry ◽  
Crystal Parameter ◽  
Quantitative Procedure

Since Du Mond and Kirkpatrick first discussed the principle of a bent crystal spectrograph in 1930, curved single crystals have been widely utilized as spectrometric monochromators as well as diffractors for focusing x rays diverging from a point. Curved crystal diffraction theory predicts that the diffraction parameters - the rocking curve width w, and the peak reflection coefficient r of curved crystals will certainly deviate from those of their flat form. Due to a lack of curved crystal parameter data in current literature and the need for optimizing the choice of diffraction geometry and crystal materials for various applications, we have continued the investigation of our technique presented at the last conference. In the present abstract, we describe a more rigorous and quantitative procedure for measuring the parameters of curved crystals.The diffraction image of a singly bent crystal under study can be obtained by using the Johann geometry with an x-ray point source.

Synthesis and characterization of TiN / Ti / AISI 410 coatings

2018 ◽  
Vol 2 (1) ◽  
pp. 7
Author(s):  
S Chirino ◽  
Jaime Diaz ◽  
N Monteblanco ◽  
E Valderrama
Keyword(s):  
Synthesis And Characterization ◽  
Photoemission Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Columnar Grains ◽  
Tin Thin Films ◽  
Steel Aisi ◽  
Interacting Surfaces ◽  
Stainless Steel Aisi

The synthesis and characterization of Ti and TiN thin films of different thicknesses was carried out on a martensitic stainless steel AISI 410 substrate used for tool manufacturing. The mechanical parameters between the interacting surfaces such as thickness, adhesion and hardness were measured. By means of the scanning electron microscope (SEM) the superficial morphology of the Ti/TiN interface was observed, finding that the growth was of columnar grains and by means of EDAX the existence of titanium was verified.  Using X-ray diffraction (XRD) it was possible to observe the presence of residual stresses (~ -3.1 GPa) due to the different crystalline phases in the coating. Under X-ray photoemission spectroscopy (XPS) it was possible to observe the molecular chemical composition of the coating surface, being Ti-N, Ti-N-O and Ti-O the predominant ones.

Characterizations of Synthetic 8mol% YSZ with Comparison to 3mol %YSZ for HT-SOFC

2020 ◽  
Vol 38 (4A) ◽  
pp. 491-500
Author(s):  
Abeer F. Al-Attar ◽  
Saad B. H. Farid ◽  
Fadhil A. Hashim
Keyword(s):  
Ionic Conductivity ◽  
Electrochemical Impedance ◽  
Structural Information ◽  
Impedance Analysis ◽  
High Energy ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Powder Morphology ◽  
X Ray

In this work, Yttria (Y2O3) was successfully doped into tetragonal 3mol% yttria stabilized Zirconia (3YSZ) by high energy-mechanical milling to synthesize 8mol% yttria stabilized Zirconia (8YSZ) used as an electrolyte for high temperature solid oxide fuel cells (HT-SOFC). This work aims to evaluate the densification and ionic conductivity of the sintered electrolytes at 1650°C. The bulk density was measured according to ASTM C373-17. The powder morphology and the microstructure of the sintered electrolytes were analyzed via Field Emission Scanning Electron Microscopy (FESEM). The chemical analysis was obtained with Energy-dispersive X-ray spectroscopy (EDS). Also, X-ray diffraction (XRD) was used to obtain structural information of the starting materials and the sintered electrolytes. The ionic conductivity was obtained through electrochemical impedance spectroscopy (EIS) in the air as a function of temperatures at a frequency range of 100(mHz)-100(kHz). It is found that the 3YSZ has a higher density than the 8YSZ. The impedance analysis showed that the ionic conductivity of the prepared 8YSZ at 800°C is0.906 (S.cm) and it was 0.214(S.cm) of the 3YSZ. Besides, 8YSZ has a lower activation energy 0.774(eV) than that of the 3YSZ 0.901(eV). Thus, the prepared 8YSZ can be nominated as an electrolyte for the HT-SOFC.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

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