Characteristics of titanium oxide films deposited by an activated reactive evaporation method

1994 ◽  
Vol 9 (6) ◽  
pp. 1468-1473 ◽  
Author(s):  
Tatsuo Fujii ◽  
Naoki Sakata ◽  
Jun Takada ◽  
Yoshinari Miura ◽  
Yoshihiro Daitoh ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
Evaporation Method ◽  
Reactive Evaporation ◽  
Transmission Electron ◽  
Large Lattice Mismatch ◽  
Activated Reactive Evaporation

Titanium di- and sesquioxide films were epitaxially grown on the (001) surface of sapphire single-crystalline substrates by an activated reactive evaporation method. Formation range for each titanium oxide was determined as a function of oxygen pressure (Po2) by means of x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films prepared at Po2 ≥ 2.0 × 10−4 Torr were stoichiometric (100)-oriented rutile of TiO2, and with decreasing Po2 they would accommodate more and more Ti3+ ions in the rutile structure. At Po2 = 0.6 × 10−4 Torr, on the other hand, (001)-oriented Ti2O3 was formed and an electrical transition was clearly detected at about 400 K. However, the large lattice mismatch between the substrate and these films leads to a periodic introduction of misfit dislocations in the case of the TiO2 films and a mixing of stacking sequences for the Ti2O3 films.

Epitaxial Growth and Structure of Cubic and Pseudocubic Perovskite Films on Perovskite Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
P. A. Langjahr ◽  
T. Wagner ◽  
M. RÜhle ◽  
F. F. Lange
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Lattice Parameter ◽  
Ternary Oxide ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Resolution Electron

AbstractCubic and pseudocubic perovskite films on perovskite substrates are used to study the influence of the lattice mismatch on the epitaxial growth of thin films on substrates of the same structure. For the growth of the films, a metalorganic decomposition route (MOD) using 2-ethylhexanoates and neodecanoates as precursors, was developed. The decomposition of the precursors was investigated with thermogravimetric analysis (TGA) and x-ray diffraction (XRD). The films were spin-coated on (001)-oriented SrTiO3- and LaAlO3-substrates, pyrolyzed and afterwards annealed between 600°C and 1200°C. XRD-nvestigations and conventional transmission electron microscopy (CTEM) show, that epitaxial films with the orientation relationship [100](001) film ║ [100](001) substrate can be grown. With XRD, it could be shown, that not only ternary oxide films (SrZrO3, BaZrO3 and BaCeO3), but also perovskite solid solution films (SrTi0.5Zr0.5O3and BaCe0.5Zr0.5O3) can be prepared. Strong interdiffusion, detected by a shift of the film lattice parameter towards the substrate lattice parameter was found in SrZrO3- and BaZrO3-films on SrTiO3, annealed at temperatures above 1050°C. High resolution electron microscopy (HREM) studies of SrZrO3 on SrTiO3 show that a crystalline semicoherent interface with a periodical array of misfit dislocations is present.

Transmission electron microscopy observation and optical property of sol-gel derived LiNbO3 films

1996 ◽  
Vol 11 (12) ◽  
pp. 3152-3157 ◽  
Author(s):  
K. Terabe ◽  
A. Gruverman ◽  
Y. Matsui ◽  
N. Iyi ◽  
K. Kitamura
Keyword(s):  
Lattice Mismatch ◽  
Sol Gel ◽  
Misfit Dislocations ◽  
Microscopy Observation ◽  
Continuous Film ◽  
Transmission Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Interface Structures ◽  
Optical Waveguiding

Crystallization behavior, defects, and interface structures of sol-gel derived LiNbO3 films on three kinds of substrates were examined. The nucleation was found to occur epitaxially at the interface between the film and the substrate. The continuous film is formed by coalescence of the island-like crystallites. When sapphire substrate is used, which has large lattice mismatch with the LiNbO3, the resulting film contains a large amount of micropores, twin structures, and misfit dislocations. On the other hand, while LiTaO3 and 5% MgO-doped LiNbO3 substrates with smaller mismatch are used as substrates, the films show no evidence of the formation of dislocations and twins. The film on 5% MgO-doped LiNbO3 substrate shows better optical waveguiding property.

Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α

1988 ◽  
Vol 116 ◽  
pp. 465-470 ◽  
Author(s):  
A. S. Yapsir ◽  
C.-H. Choi ◽  
S. N. Yang ◽  
T.-M. Lu ◽  
M. Madden ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Atom Ratio ◽  
Transmission Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Partially Ionized ◽  
Acceleration Voltage

AbstractSingle crystal Al(111) films were grown on Si(111) surface at room temperature under a conventional vacuum condition using the partially ionized beam (PIB) deposition technique. The Al films were deposited with an ion to atom ratio of about 0.3% and an acceleration voltage of 1 kV. Transmission electron microscopy (TEM) analysis showed that the as-deposited films were single crystal with certain density of dislocation networks. These dislocations disappeared following a heat treatment at 450°C for 30 min. From X-ray diffraction and TEM patterns, it was observed that the Al(111) was aligned to the substrate with Al<1l0>//Si<1l0>. Possible mechanisms of the PIB epitaxial growth and a novel structural defect that is unique to this large lattice mismatch system are discussed.

X-Ray Diffraction Study on YBa2Cu3O7-δEpitaxial Thin Film Grown by an Activated Reactive Evaporation Method

1988 ◽  
Vol 27 (Part 2, No. 10) ◽  
pp. L1899-L1901 ◽  
Author(s):  
Kousei Kamigaki ◽  
Hikaru Terauchi ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffraction Study ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Method ◽  
Reactive Evaporation ◽  
Activated Reactive Evaporation

Heteroepitaxial growth and structural analysis of epitaxial α–Fe2O3(1010) on TiO2(001)

2005 ◽  
Vol 20 (5) ◽  
pp. 1250-1256 ◽  
Author(s):  
Joshua R. Williams ◽  
Chongmin Wang ◽  
Scott A. Chambers
Keyword(s):  
Lattice Mismatch ◽  
High Energy ◽  
Unit Cell ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Pole Figures ◽  
Large Lattice ◽  
Large Lattice Mismatch

We grew epitaxial α–Fe2O3(1010) on TiO2(001) rutile by oxygen plasma-assisted molecular-beam epitaxy. High-resolution transmission electron microscopy (HRTEM), reflection high-energy electron diffraction (RHEED), and x-ray diffraction pole figures confirm that the film is composed of four different in-plane orientations rotated by 90° relative to one another. For a given Fe2O3 unit cell, the lattice mismatch along the parallel [0001]Fe2O3 and [100]TiO2 directions is nominally +67%. However, due to a 3-fold repetition of the slightly distorted square symmetry of anion positions within the Fe2O3 unit cell, there is a coincidental anion alignment along the [0001]Fe2O3 and [100]TiO2 directions, which results in an effective lattice mismatch of only −0.02% along this direction. The lattice mismatch is nearly 10% in the orthogonal [1120]Fe2O3 and [100]TiO2 directions. The film is highly ordered and well registered to the substrate despite a large lattice mismatch in one direction. The film grows in registry with the substrate along the parallel [0001]Fe2O3 and [100]TiO2 directions and nucleates dislocations along the orthogonal [1120]Fe2O3 [100]TiO2 directions.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

X-ray study on ultra-thin YBa2Cu3O7−δ single crystal film in situ grown by an activated reactive evaporation method

1990 ◽  
Vol 40-41 ◽  
pp. 815-818 ◽  
Author(s):  
K KAMIGAKI ◽  
H TERAUCHI ◽  
T TERASHIMA ◽  
Y BANDO ◽  
K IIJIMA ◽  
...  
Keyword(s):  
Single Crystal ◽  
X Ray ◽  
Evaporation Method ◽  
Single Crystal Film ◽  
Reactive Evaporation ◽  
Crystal Film ◽  
Activated Reactive Evaporation

Synthesis and characterization of homogeneous lead-substituted tin oxide with the (110) face of rutile structure

2000 ◽  
Vol 15 (10) ◽  
pp. 2076-2079
Author(s):  
Chika Nozaki ◽  
Takashi Yamada ◽  
Kenji Tabata ◽  
Eiji Suzuki
Keyword(s):  
Electron Microscopy ◽  
Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

Synthesis of a rutile-type lead-substituted tin oxide with (110) face was investigated. The characterization was performed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, infrared spectroscopy, x-ray photoelectron spectroscopy, and Brunauer–Emmett–Teller surface area measurements. The homogeneous rutile-type lead-substituted tin oxide was obtained until 4.1 mol% of tin was substituted with lead. The surface of obtained oxide had a homogeneously lead-substituted (110) face.

Temporal Evolution of Bimodal Distribution of γ’ Precipitates in Ni-Al-Mo Alloys under the Influence of Coherency Strains

1995 ◽  
Vol 398 ◽  
Author(s):  
A.D. Sequeira ◽  
H.A. Calderon ◽  
G. Kostorz
Keyword(s):  
Lattice Mismatch ◽  
Bimodal Distribution ◽  
X Ray Diffraction ◽  
Double Step ◽  
Bimodal Size Distribution ◽  
Elastic Fields ◽  
Transmission Electron ◽  
The Matrix ◽  
Kinetics Of ◽  
Coherency Strains

ABSTRACTThe influence of coherency strains produced by the γ-γ’ lattice mismatch, δ, on the decomposition process of Ni-Al-Mo alloys with a bimodal size distribution is presented. Samples with δ ranging from positive to negative, were investigated in a double-step aging procedure. The evolution of the microstructure and the kinetics of coarsening were studied using transmission electron microscopy (TEM). The lattice mismatch between the matrix and the different classes of precipitates was determined by high-resolution high-temperature x-ray diffraction. It is shown that the strain fields produced by the lattice mismatch can influence dramatically the decomposition of metallic alloys. It is suggested that the reduction of the coarsening rate of the large precipitates, the fast coarsening rate of the small precipitates and the distortions detected in the matrix are all direct consequences of the elastic fields produced by the γ-γ’ lattice mismatch.

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 43-49 ◽  
Author(s):  
Peter Zaumseil ◽  
Yuji Yamamoto ◽  
Joachim Bauer ◽  
Markus Andreas Schubert ◽  
Jana Matejova ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Growth Conditions ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
Strain Partitioning ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
Periodic Arrays ◽  
Transmission Electron

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

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