Heteroepitaxial growth and structural analysis of epitaxial α–Fe2O3(1010) on TiO2(001)

2005 ◽  
Vol 20 (5) ◽  
pp. 1250-1256 ◽  
Author(s):  
Joshua R. Williams ◽  
Chongmin Wang ◽  
Scott A. Chambers
Keyword(s):  
Lattice Mismatch ◽  
High Energy ◽  
Unit Cell ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Pole Figures ◽  
Large Lattice ◽  
Large Lattice Mismatch

We grew epitaxial α–Fe2O3(1010) on TiO2(001) rutile by oxygen plasma-assisted molecular-beam epitaxy. High-resolution transmission electron microscopy (HRTEM), reflection high-energy electron diffraction (RHEED), and x-ray diffraction pole figures confirm that the film is composed of four different in-plane orientations rotated by 90° relative to one another. For a given Fe2O3 unit cell, the lattice mismatch along the parallel [0001]Fe2O3 and [100]TiO2 directions is nominally +67%. However, due to a 3-fold repetition of the slightly distorted square symmetry of anion positions within the Fe2O3 unit cell, there is a coincidental anion alignment along the [0001]Fe2O3 and [100]TiO2 directions, which results in an effective lattice mismatch of only −0.02% along this direction. The lattice mismatch is nearly 10% in the orthogonal [1120]Fe2O3 and [100]TiO2 directions. The film is highly ordered and well registered to the substrate despite a large lattice mismatch in one direction. The film grows in registry with the substrate along the parallel [0001]Fe2O3 and [100]TiO2 directions and nucleates dislocations along the orthogonal [1120]Fe2O3 [100]TiO2 directions.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

Properties of Mbe Grown Heterostructures of GaAs/InSb and InP/InSb.

1989 ◽  
Vol 145 ◽  
Author(s):  
M. T. Asom ◽  
E. A. Fitzgerald ◽  
F. A. Thiel ◽  
R. People ◽  
D. Eaglesham ◽  
...  
Keyword(s):  
Hall Effect ◽  
Lattice Mismatch ◽  
High Energy ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Energy Position ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Peaks

AbstractWe have employed molecular beam epitaxy in the growth of InSb on GaAs and InP. The transport, optical and structural properties of the films were investigated by in-situ reflection high energy electron diffraction, Hall effect and temperature dependent Hall effect, photoluminescence, transmission electron microscopy and X-ray diffractometry techniques. We report mobilities of up to 32,000 cm2/volt-sec and free electron concentrations of 3x1016/cm3 at room temperature. We have discovered a new defect state in InSb with an energy position of Ec - 0.05 ± 0.006eV. Optical and structural measurements reveal that the differences in thermal expansion and lattice mismatch between the substrates and films results in the broadening of the X-ray diffraction peaks and the near gap photoluminescence linewidths. Furthermore, we observe band gap shifts to higher energies of 10meV and 20meV for growth on GaAs and InP, respectively.

Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α

1988 ◽  
Vol 116 ◽  
pp. 465-470 ◽  
Author(s):  
A. S. Yapsir ◽  
C.-H. Choi ◽  
S. N. Yang ◽  
T.-M. Lu ◽  
M. Madden ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Atom Ratio ◽  
Transmission Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Partially Ionized ◽  
Acceleration Voltage

AbstractSingle crystal Al(111) films were grown on Si(111) surface at room temperature under a conventional vacuum condition using the partially ionized beam (PIB) deposition technique. The Al films were deposited with an ion to atom ratio of about 0.3% and an acceleration voltage of 1 kV. Transmission electron microscopy (TEM) analysis showed that the as-deposited films were single crystal with certain density of dislocation networks. These dislocations disappeared following a heat treatment at 450°C for 30 min. From X-ray diffraction and TEM patterns, it was observed that the Al(111) was aligned to the substrate with Al<1l0>//Si<1l0>. Possible mechanisms of the PIB epitaxial growth and a novel structural defect that is unique to this large lattice mismatch system are discussed.

scholarly journals Multiscale Copper-µDiamond Nanostructured Composites

2012 ◽  
Vol 730-732 ◽  
pp. 925-930
Author(s):  
Daniela Nunes ◽  
Vanessa Livramento ◽  
Horácio Fernandes ◽  
Carlos Silva ◽  
Nobumitsu Shohoji ◽  
...  
Keyword(s):  
Pure Copper ◽  
Thermal Stabilization ◽  
Hot Extrusion ◽  
Processing Parameters ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optimal Processing ◽  
Novel Approach ◽  
Transmission Electron

Nanostructured copper-diamond composites can be tailored for thermal management applications at high temperature. A novel approach based on multiscale diamond dispersions is proposed for the production of this type of materials: a Cu-nDiamond composite produced by high-energy milling is used as a nanostructured matrix for further dispersion of micrometer sized diamond. The former offers strength and microstructural thermal stability while the latter provides high thermal conductivity. A series of Cu-nDiamond mixtures have been milled to define the minimum nanodiamond fraction suitable for matrix refinement and thermal stabilization. A refined matrix with homogenously dispersed nanoparticles could be obtained with 4 at.% nanodiamond for posterior mixture with mDiamond and subsequent consolidation. In order to define optimal processing parameters, consolidation by hot extrusion has been carried out for a Cu-nDiamond composite and, in parallel, for a mixture of pure copper and mDiamond. The materials produced were characterized by X-ray diffraction, scanning and transmission electron microscopy and microhardness measurements.

Effect of Nitridation Magnetic Properties of Nanocrystalline Fe-Co Alloy Powders

2010 ◽  
Vol 654-656 ◽  
pp. 1106-1109
Author(s):  
Ya Qiong He ◽  
Chang Hui Mao ◽  
Jian Yang
Keyword(s):  
Grain Size ◽  
Magnetic Properties ◽  
Alloy Powder ◽  
High Energy ◽  
X Ray Diffraction ◽  
Powder Mixtures ◽  
X Ray ◽  
Transmission Electron ◽  
Nitridation Temperature ◽  
Microstructure And Magnetic Properties

Nanocrystalline Fe-Co alloy powders, which were prepared by high-energy mechanical milling, were nitrided under the mixing gas of NH3/H2 in the temperature range from 380°C to 510°C. X-ray diffraction (XRD) was used to analyze the grain size and reaction during the processing. The magnetic properties of the nitrided powders were measured by Vibrating Sample Magnetometer (VSM). The results show that with the appearance of Fe4N phase after nitride treatment, and the grain-size of FeCo phase decreases with the increase of nitridation temperature between 380°C to 450°C.The saturation magnetization of nitrided alloy powder treated at 480°C is about 18% higher than that of the initial Fe-Co alloy powder, accompanied by the reduction of the coercivity. Transmission electron microscope (TEM) was used, attempting to further analyze the effect of Fe4N phase on microstructure and magnetic properties of the powder mixtures.

Structural changes in titanium dioxide nanocrystals during plastic deformation

2005 ◽  
Vol 38 (5) ◽  
pp. 749-756 ◽  
Author(s):  
Ulrich Gesenhues
Keyword(s):  
Structural Changes ◽  
Crystal Size ◽  
Lower Layer ◽  
High Energy ◽  
Primary Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Hall Method ◽  
Means Of Transmission

The polygonization of 200 nm rutile crystals during dry ball-milling at 10gwas monitored in detail by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD). The TEM results showed how to modify the Williamson–Hall method for a successful evaluation of crystal size and microstrain from XRD profiles. Macrostrain development was determined from the minute shift of the most intense reflection. In addition, changes in pycnometrical density were monitored. Accordingly, the primary crystal is disintegrated during milling into a mosaic of 12–35 nm pieces where the grain boundaries induce up to 1.2% microstrain in a lower layer of 6 nm thickness. Macrostrain in the interior of the crystals rises to 0.03%. The pycnometrical density, reflecting the packing density of atoms in the grain boundary, decreases steadily by 1.1%. The results bear relevance to our understanding of plastic flow and the mechanism of phase transitions of metal oxides during high-energy milling.

scholarly journals Structural Evolution in Wet Mechanically Alloyed Co-Fe-(Ta,W)-B Alloys

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 800
Author(s):  
Vladimír Girman ◽  
Maksym Lisnichuk ◽  
Daria Yudina ◽  
Miloš Matvija ◽  
Pavol Sovák ◽  
...  
Keyword(s):  
Structural Changes ◽  
Magnetic Measurements ◽  
Structural Evolution ◽  
High Energy ◽  
Control Agent ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
X Ray ◽  
Transmission Electron ◽  
X Ray Absorption

In the present study, the effect of wet mechanical alloying (MA) on the glass-forming ability (GFA) of Co43Fe20X5.5B31.5 (X = Ta, W) alloys was studied. The structural evolution during MA was investigated using high-energy X-ray diffraction, X-ray absorption spectroscopy, high-resolution transmission electron microscopy and magnetic measurements. Pair distribution function and extended X-ray absorption fine structure spectroscopy were used to characterize local atomic structure at various stages of MA. Besides structural changes, the magnetic properties of both compositions were investigated employing a vibrating sample magnetometer and thermomagnetic measurements. It was shown that using hexane as a process control agent during wet MA resulted in the formation of fully amorphous Co-Fe-Ta-B powder material at a shorter milling time (100 h) as compared to dry MA. It has also been shown that substituting Ta with W effectively suppresses GFA. After 100 h of MA of Co-Fe-W-B mixture, a nanocomposite material consisting of amorphous and nanocrystalline bcc-W phase was synthesized.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

Heteroepitaxial Growth of Ba0.5Sr0.5TiO3/SrRuO3 on YSZ/Si by Off-Axis Sputtering

1994 ◽  
Vol 361 ◽  
Author(s):  
S.Y. Hou ◽  
J. Kwo ◽  
R.K. Watts ◽  
J.-Y. Cheng ◽  
R.J. Cava ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Degree Of Crystallinity ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Dielectric Constant And Loss ◽  
Bst Films ◽  
High Degree ◽  
Room Temperature Dielectric Constant

ABSTRACTWe demonstrate an epitaxial heterostructure of Ba0.5Sr0.5 TiO3/SrRuO3/YSZ on Si for potential charge storage applications. The dielectric Ba0.5Sr0.5TiO3 (BST) and conductive oxide SrRuO3 are both grown (110) oriented on YSZ (100) buffered Si by 90° off-axis sputtering. These films showed a high degree of crystallinity with minimal interdiffusion at the interfaces as examined by X-ray diffraction, Rutherford backscattering spectroscopy, and cross-section transmission electron microscopy. The in-plane epitaxial alignment of the films is BST/SRO 〈111〉 // YSZ 〈110〉 with a four-fold degeneracy. The dielectric constant and loss tangent of the epi-BST films are 360 and 0.01 at 10 kHz. The leakage current density is < 4×10∼−7 A/cm2 at 1 V. The room temperature dielectric constant (ε) of the BST films shows a roll-off in the 1–10 MHz range. This is attributed to the existence of a series resistance in the measurement circuit, which likely arises from the SrRuO3 electrode.

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