Electron emission from chemical vapor deposited diamond and amorphous carbon films observed with a simple field emission device

1995 ◽  
Vol 10 (7) ◽  
pp. 1585-1588 ◽  
Author(s):  
Z. Feng ◽  
I.G. Brown ◽  
J.W. Ager
Keyword(s):  
Field Strength ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Electron Emission ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Chemical Vapor Deposited ◽  
Emission Device

Electron emission from chemical vapor deposited (CVD) diamond and amorphous carbon (a-C) films was observed with a simple field emission device (FED). Both diamond and a-C films were prepared with microwave plasma-enhanced CVD techniques. Electron emission in the ficld strength range + 10 to −10 MVm−1 was studied, and the field emission source was confirmed by a diode characteristic of the I-V curve, a straight line in the Fowler-Nordheim (F-N) plot, and direct observation of light emission from a fluorescent screen. The turn-on field strength was ∼5 MVm−1, which was similar for both kinds of carbon films. The highest current density for diamond films, observed at a field strength of 10 MVm−1, was ∼15 μA cm−2. Diamond films yielded a higher emission current than a-C films. The reasons for the observed field emission are discussed.

Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films

1992 ◽  
Vol 7 (2) ◽  
pp. 404-410 ◽  
Author(s):  
Bharat Bhushan ◽  
Andrew J. Kellock ◽  
Nam-Hee Cho ◽  
Joel W. Ager
Keyword(s):  
Chemical Vapor Deposition ◽  
Physical Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Bulk Diamond

Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.

ChemInform Abstract: A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction.

ChemInform ◽  
2010 ◽  
Vol 28 (32) ◽  
pp. no-no
Author(s):  
M. S. HAQUE ◽  
H. A. NASEEM ◽  
A. P. MALSHE ◽  
W. D. BROWN
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

THE OPTICAL PROPERTIES OF NITROGENATED AMORPHOUS CARBON FILMS GROWN BY A NOVEL SURFACE WAVE MICROWAVE PLASMA CVD METHOD

2004 ◽  
Vol 18 (18) ◽  
pp. 987-1001 ◽  
Author(s):  
M. RUSOP ◽  
S. ADHIKARI ◽  
A. M. M. OMER ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Annealing Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Cvd Method ◽  
Wide Range ◽  
Bonding Properties

The effects of annealing temperature on the optical properties of nitrogenated amorphous carbon (a-C:N) films grown on quartz substrates by a novel surface wave microwave plasma chemical vapor deposition (SWMP-CVD) method are reported. The thickness, optical, structural and bonding properties of the as-grown and anneal-treated a-C:N films were measured and compared. The film thickness decreased rapidly with increasing annealing temperature above 350°C. A wide range of optical absorption characteristics is observed, depending on the annealing temperature. The optical band gap of as-grown a-C:N films is approximately 2.8 eV, gradually decreasing to 2.5 eV for the films anneal-treated at 300°C, and beyond that decreasing rapidly down to 0.9 eV at 500°C. The Raman and FTIR spectroscopy measurements have shown that the structural and composition of the films can be tuned by optimizing the annealing temperature. The change of optical, structural and bonding properties of SWMP-CVD-grown a-C:N films with higher annealing temperature was attributed to the fundamental changes in the bonding and band structures of the films.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Characterization and Tribological Properties of Nanostructured Copper/Carbon Composite Films Prepared by Microwave Plasma-Assisted Dual Deposition Processes

2002 ◽  
Vol 750 ◽  
Author(s):  
François Thiery ◽  
Yves Pauleau ◽  
Jacques Pelletier
Keyword(s):  
Amorphous Carbon ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Composite Films ◽  
Chemical Vapor ◽  
Carbon Matrix ◽  
Carbon Composite ◽  
Carbon Films ◽  
Radius Of Curvature

ABSTRACTNanocrystalline copper/hydrogenated amorphous carbon films have been deposited on Si substrates at the floating potential using a distributed electron cyclotron resonance microwave plasma reactor. In this deposition technique, the microwave plasma-enhanced chemical vapor deposition process of carbon from argon-methane or argon-acetylene mixtures of various compositions was associated with the sputter deposition of copper from a copper target. The total pressure was fixed at 0.13 Pa. For deposition, the substrates mounted on a water-cooled substrate holder were maintained at ambient temperature. The composition of films determined by Rutherford backscattering spectroscopy, energy recoil detection analyses and nuclear reaction analyses was investigated as a function of the gas phase composition. The structure of films was identified by X-ray diffraction (XRD) techniques and the size of copper crystallites incorporated in the amorphous carbon matrix was deduced from XRD data. The magnitude of residual stresses developed in these films was calculated from the radius of curvature of film/substrate samples determined by profilometry. The residual stress values were found to be nearly independent on the composition of films and deposition parameters.

Mechanism of field emission from chemical vapor deposited undoped polycrystalline diamond films

2000 ◽  
Vol 87 (10) ◽  
pp. 7508-7518 ◽  
Author(s):  
Jae Yeob Shim ◽  
Hong Koo Baik ◽  
Kie Moon Song
Keyword(s):  
Field Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Chemical Vapor Deposited

Field emission conduction mechanisms in chemical vapor deposited diamond and diamondlike carbon films

1998 ◽  
Vol 72 (17) ◽  
pp. 2182-2184 ◽  
Author(s):  
Paul W. May ◽  
Stefan Höhn ◽  
Wang N. Wang ◽  
Neil A. Fox
Keyword(s):  
Field Emission ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Conduction Mechanisms ◽  
Chemical Vapor Deposited ◽  
Diamondlike Carbon

Electron Emission Properties of Si Field Emitter Arrays Coated With Nanocrystalline Diamond From Fullerene Precursors

1997 ◽  
Vol 498 ◽  
Author(s):  
T. G. McCauley ◽  
T. D. Corrigan ◽  
A. R. Krauss ◽  
O. Auciello ◽  
D. Zhou ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Threshold Field ◽  
Field Emitter ◽  
Effective Work ◽  
Field Emitter Arrays ◽  
Electron Field

ABSTRACTIn this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

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