THE OPTICAL PROPERTIES OF NITROGENATED AMORPHOUS CARBON FILMS GROWN BY A NOVEL SURFACE WAVE MICROWAVE PLASMA CVD METHOD

2004 ◽  
Vol 18 (18) ◽  
pp. 987-1001 ◽  
Author(s):  
M. RUSOP ◽  
S. ADHIKARI ◽  
A. M. M. OMER ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Annealing Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Cvd Method ◽  
Wide Range ◽  
Bonding Properties

The effects of annealing temperature on the optical properties of nitrogenated amorphous carbon (a-C:N) films grown on quartz substrates by a novel surface wave microwave plasma chemical vapor deposition (SWMP-CVD) method are reported. The thickness, optical, structural and bonding properties of the as-grown and anneal-treated a-C:N films were measured and compared. The film thickness decreased rapidly with increasing annealing temperature above 350°C. A wide range of optical absorption characteristics is observed, depending on the annealing temperature. The optical band gap of as-grown a-C:N films is approximately 2.8 eV, gradually decreasing to 2.5 eV for the films anneal-treated at 300°C, and beyond that decreasing rapidly down to 0.9 eV at 500°C. The Raman and FTIR spectroscopy measurements have shown that the structural and composition of the films can be tuned by optimizing the annealing temperature. The change of optical, structural and bonding properties of SWMP-CVD-grown a-C:N films with higher annealing temperature was attributed to the fundamental changes in the bonding and band structures of the films.

A NOVEL OF SURFACE WAVE MICROWAVE PLASMA CVD METHOD ON THE PREPARATION OF NITROGENATED AMORPHOUS CARBON FILMS

2005 ◽  
Vol 19 (05) ◽  
pp. 857-867
Author(s):  
M. RUSOP ◽  
S. ADHIKARY ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Surface Wave ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
X Rays ◽  
Plasma Chemical Vapor Deposition

We have studied the influence of the methane gas ( CH 4) pressure on the surface morphology, composition, structural and electrical properties of nitrogenated amorphous carbon ( a-C:N ) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Auger electron spectroscopy (AES), X-rays photoelectron spectroscopy (XPS), UV-visible spectroscopy and 4-point probe resistance measurement. We have succeeded in growing a-C:N films using a novel method of SWMP-CVD at room temperature and found that the surface morphology, bonding, optical and electrical properties of a-C:N films are strongly dependent on the CH 4 gas sources and the a-C:N films grown at higher CH 4 gas pressure have relatively high electrical conductivity.

OPTICAL PROPERTIES OF TRIMETHYLBORON AND NITROGEN CODOPED AMORPHOUS CARBON FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1096-1100 ◽  
Author(s):  
Y. HAYASHI ◽  
S. ISHIKAWA ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. ADACHI ◽  
...  
Keyword(s):  
Optical Properties ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Amorphous Carbon Films ◽  
Fabry Perot ◽  
Pl Emission ◽  
Hydrogenated Amorphous

We report on the efficient photoluminescence (PL) and optical properties of hydrogenated amorphous carbon thin films codoped with nitrogen and trimethylboron (TMB) grown by rf plasma-enhanced chemical vapor deposition at room temperature. The study clearly shows the observation of discrete PL emission peaks. The PL intensity of the film deposited with 20 sccm TMB is more than 103 times than that of the film deposited without TMB. The change of optical bandgap and PL emission energy with TMB flow rate are discussed based on sp3 and sp2 C networks. Angular dependence of the PL spectra revealed that the origin of multiple sharp peaks is due to Fabry-Perot cavity interference effect.

Characterization and Tribological Properties of Nanostructured Copper/Carbon Composite Films Prepared by Microwave Plasma-Assisted Dual Deposition Processes

2002 ◽  
Vol 750 ◽  
Author(s):  
François Thiery ◽  
Yves Pauleau ◽  
Jacques Pelletier
Keyword(s):  
Amorphous Carbon ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Composite Films ◽  
Chemical Vapor ◽  
Carbon Matrix ◽  
Carbon Composite ◽  
Carbon Films ◽  
Radius Of Curvature

ABSTRACTNanocrystalline copper/hydrogenated amorphous carbon films have been deposited on Si substrates at the floating potential using a distributed electron cyclotron resonance microwave plasma reactor. In this deposition technique, the microwave plasma-enhanced chemical vapor deposition process of carbon from argon-methane or argon-acetylene mixtures of various compositions was associated with the sputter deposition of copper from a copper target. The total pressure was fixed at 0.13 Pa. For deposition, the substrates mounted on a water-cooled substrate holder were maintained at ambient temperature. The composition of films determined by Rutherford backscattering spectroscopy, energy recoil detection analyses and nuclear reaction analyses was investigated as a function of the gas phase composition. The structure of films was identified by X-ray diffraction (XRD) techniques and the size of copper crystallites incorporated in the amorphous carbon matrix was deduced from XRD data. The magnitude of residual stresses developed in these films was calculated from the radius of curvature of film/substrate samples determined by profilometry. The residual stress values were found to be nearly independent on the composition of films and deposition parameters.

Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films

1992 ◽  
Vol 7 (2) ◽  
pp. 404-410 ◽  
Author(s):  
Bharat Bhushan ◽  
Andrew J. Kellock ◽  
Nam-Hee Cho ◽  
Joel W. Ager
Keyword(s):  
Chemical Vapor Deposition ◽  
Physical Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Bulk Diamond

Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.

THE CHARACTERISTIC OF AS-GROWN AND POST-ANNEALED NITROGEN DOPED AMORPHOUS CARBON THIN FILMS DEPOSITED BY SURFACE WAVE MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD

2006 ◽  
Vol 13 (05) ◽  
pp. 593-598
Author(s):  
M. RUSOP ◽  
S. ABDULLAH ◽  
S. ADHIKARI ◽  
A. M. M. OMER ◽  
T. SOGA ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Plasma Chemical Vapor Deposition ◽  
Nitrogen Doped

Nitrogen doped amorphous carbon ( a - C : N ) thin films were deposited on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition (SWMP-CVD) technique at low temperatures (<100°C). We used argon ( Ar ), camphor dissolved in alcohol, and nitrogen ( N ) as carrier, source, and dopant gases, respectively. Optical band gap (E g ) decreased from 4.1 to 2.4 eV when the N gas concentration increased from 0% to 4.5%. The films were annealed at different temperatures ranging from 150°C to 450°C in Ar gas environment to investigate the optical and electrical properties of the films before and after annealing. Both E g and electrical resistivity (ρ) decreased dramatically up to 0.95 eV and 57×103 Ω cm at 450°C annealing. The structural modifications of the films leading them to become more graphitized as a function of the annealing temperature were confirmed by the characterization of Raman spectra.

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