Sintering kinetics of silica-titania sol-gel films on silicon wafers

1996 ◽  
Vol 11 (2) ◽  
pp. 353-357 ◽  
Author(s):  
Xin Min Du ◽  
Rui M. Almeida

The sintering behavior of 80SiO2–20TiO2 sol-gel thin films on Si wafers, prepared by spin coating, was studied by the calculation of density as a function of temperature, from refractive index measurements and the Lorenz–Lorentz relationship. The sintering kinetics of the films were fit to the Mackenzie and Shuttleworth model, over the temperature range of 700 °C–850 °C. Using this model, the viscosity was determined as a function of temperature. These gel films sintered to full density at 850 °C.

1994 ◽  
Vol 346 ◽  
Author(s):  
Hiroshi Hirashima ◽  
Kenji Adachi ◽  
Hiroaki Imai

ABSTRACTIn order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.


2013 ◽  
Vol 2013 ◽  
pp. 1-11 ◽  
Author(s):  
Abdel-Sattar Gadallah ◽  
M. M. El-Nahass

We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.


Optik ◽  
2016 ◽  
Vol 127 (4) ◽  
pp. 1879-1883 ◽  
Author(s):  
H. Aydın ◽  
C. Aydın ◽  
Ahmed A. Al-Ghamdi ◽  
W.A. Farooq ◽  
F. Yakuphanoglu

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.


2011 ◽  
Vol 181-182 ◽  
pp. 370-373
Author(s):  
Sheng Zhao Wang ◽  
Dan Zhang ◽  
Ming Ji Shi ◽  
Ying Peng Yin ◽  
Lan Li Chen ◽  
...  

ZrO2 and ZrO2-PVP sol was obtained by hydrothermal synthesis. And the thin films were prepared with spin coating method. ZrO2 thin films were characterized or examined by many kinds of instruments. Fourier-transform infrared spectroscopy was employed and some infrared absorption peaks weakened when the heating temperature increased. And 1-on-1 laser-induced damage threshold tests on ZrO2 films were carried out. Refractive index and thickness of the ZrO2-PVP films were measured by means of automatic scanning spectroscopic ellipsometer and the refractive index of ZrO2 -PVP film changed with the addition of PVP content.


1996 ◽  
Vol 431 ◽  
Author(s):  
J. Samuel ◽  
A. J. Hurd ◽  
F. van Swol ◽  
L. J. Douglas Frink ◽  
C. J. Brinker ◽  
...  

AbstractWe have used a novel technique, measurement of stress isotherms in microporous thin films, as a means of characterizing porosity. The stress measurement was carried out by applying sol-gel thin films on a thin silicon substrate and monitoring the curvature of the substrate under a controlled atmosphere of various vapors. The magnitude of macroscopic bending stress developed in microporous films depends on the relative pressure and molar volume of the adsorbate and reaches a value of 180 MPa for a relative vapor pressure, P/Po = 0.001, of methanol. By using a series of molecules, and observing both the magnitude and the kinetics of stress development while changing the relative pressure, we have determined the pore size of microporous thin films. FTIR measurements were used to acquire adsorption isotherms and to compare pore emptying to stress development, about 80% of the change in stress takes place with no measurable change in the amount adsorbed. We show that for sol-gel films, pore diameters can be controlled in the range of 5 – 8 Å by “solvent templating”.


2019 ◽  
Vol 7 (1) ◽  
pp. 28
Author(s):  
KOMARAIAH DURGAM ◽  
RADHA EPPA ◽  
REDDY M. V. RAMANA ◽  
KUMAR J. SIVA ◽  
R. SAYANNA ◽  
...  

Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.


2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.


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