Modification of Sol-Gel Thin Films By Ion Implantation

1994 ◽  
Vol 346 ◽  
Author(s):  
Hiroshi Hirashima ◽  
Kenji Adachi ◽  
Hiroaki Imai
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Ion Implantation ◽  
Sol Gel ◽  
The Other ◽  
Ir Absorption ◽  
Absorption Bands ◽  
Chemically Modified ◽  
Sol Gel Films ◽  
Ion Species

ABSTRACTIn order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

Article

1998 ◽  
Vol 76 (11) ◽  
pp. 1717-1729
Author(s):  
Kalaichelvi Saravanamuttu ◽  
Xin Min Du ◽  
S Iraj Najafi ◽  
Mark P Andrews
Keyword(s):  
Refractive Index ◽  
Sol Gel ◽  
Organic Component ◽  
Wave Guide ◽  
Nanocomposite Films ◽  
Wave Number ◽  
Bragg Grating ◽  
Ir Absorption ◽  
Absorption Bands ◽  
High Reflectivity

The solution sol-gel method is used to produce thin films of photosensitive hybrid organic-inorganic glass on silicon. Glasses consisted of photoinitiator, methacryloxypropyltrimethoxysilane, methacrylic acid, and zirconium oxide. Clear, low optical loss films are obtained, indicating nanophase homogeneity in the samples. The nanocomposite films are shown to be suitable for fabricating optical components such as ridge wave guides and Bragg diffraction gratings. The increase in the refractive index of the glass relative to the surrounding material during photolithographic processing is identified as a key material parameter in device fabrication. Accordingly, electronic and vibrational spectroscopy are used to provide insight into the structural changes that occur when glasses are irradiated with continuous narrow band 4.9 eV and pulsed 6.4 eV light. Arguments are advanced, linking the changes in refractive index to collateral densification leading to volume compaction of the silicate network during organic free-radical polymerization. This was shown by following the time evolution of relevant IR absorption bands. Free silanol and unreacted methoxysilane are consumed in the process. Matrix densification is indicated by shifts to low wave number in the transverse optical phonon mode associated with decreasing Si-O-Si bond angles of the antisymmetric stretching vibration (compression). Growth in the Si-O-Si framework is observed through increased intensity in this IR absorption. Similar behaviour is observed for films irradiated with 6.4 eV light from an excimer laser. A phase mask in combination with pulsed 6.4 eV light is used to inscribe a 1.5 mm, high-reflectivity polarization-independent Bragg grating into a ridge wave guide. The high reflectivity is thought to arise from a periodic modulation of the volume compaction of the matrix. Overall, the organic component of the glass confers unique properties on the material that allow it to be densified even with 4.9 eV light. By comparison, sol-gel silica with no organic component must be densified at nearly twice the photon energy.Key words: sol-gel, wave guide, Bragg grating, photochemistry, densification, refractive index, photolithography.

Sintering kinetics of silica-titania sol-gel films on silicon wafers

1996 ◽  
Vol 11 (2) ◽  
pp. 353-357 ◽  
Author(s):  
Xin Min Du ◽  
Rui M. Almeida
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Spin Coating ◽  
Sol Gel ◽  
Full Density ◽  
Sintering Behavior ◽  
Sintering Kinetics ◽  
Titania Sol ◽  
Sol Gel Films ◽  
Kinetics Of

The sintering behavior of 80SiO2–20TiO2 sol-gel thin films on Si wafers, prepared by spin coating, was studied by the calculation of density as a function of temperature, from refractive index measurements and the Lorenz–Lorentz relationship. The sintering kinetics of the films were fit to the Mackenzie and Shuttleworth model, over the temperature range of 700 °C–850 °C. Using this model, the viscosity was determined as a function of temperature. These gel films sintered to full density at 850 °C.

Sol-gel synthesis of textured lanthanum titanate thin films

2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Optical Measurements ◽  
Layered Perovskite ◽  
Orientation Factor ◽  
Anisotropic Structures ◽  
Sol Gel Films ◽  
Sol Gel Synthesis

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.

Sol–gel tantalum pentoxide thin films with tunable refractive index for optical sensing applications

2020 ◽  
Vol 52 (10) ◽  
Author(s):  
R. Georgiev ◽  
B. Georgieva ◽  
K. Lazarova ◽  
M. Vasileva ◽  
T. Babeva
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Sensing ◽  
Sol Gel ◽  
Tantalum Pentoxide ◽  
Sensing Applications ◽  
Tunable Refractive Index

scholarly journals Study of TiO2, SnO2 and nanocomposites TiO2:SnO2 thin films prepared by sol-gel method: Successful elaboration of variable–refractive index systems

2020 ◽  
Vol 7 (1) ◽  
pp. 016439 ◽  
Author(s):  
F Medjaldi ◽  
A Bouabellou ◽  
Y Bouachiba ◽  
A Taabouche ◽  
K Bouatia ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sno2 Thin Films ◽  
Index Systems

Ten Analyses Of Sol-Gel Derived And Sputtered PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Cheng-Chen Hsueh ◽  
Martha L. MeCartney
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Ferroelectric Domains ◽  
Metal Organic ◽  
Organic Precursors ◽  
Acid Catalyzed ◽  
Sol Gel Films

ABSTRACTFerroelectric PZT thin films were prepared by sol-gel methods and RF magnetron sputtering. Sputtered PZT fast fired at 650° for 30 minutes showed microporosity. For the sol-gel route, solution precursors had a significant effect on the microstructure of the crystalline PZT films. PZT thin films derived from metal-organic precursors dissolved in n-propanol were observed to have large and microporous spherulitic grains on the order of 2 μm and phase separation in acetic acid-catalyzed films. In contrast, PZT precursors originated from alcohol exchanges with 2-methoxyethanols resulted in dense films with fine grains of ∼0.2 μm and clear evidence of ferroelectric domains. The dense sol-gel films possessed superior dielectric and ferroelectric properties.

Industrial Applications of Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
J.K. Hirvoney
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Industrial Applications ◽  
The Other ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Aqueous Corrosion ◽  
Wear Reduction ◽  
Ion Species ◽  
Corrosion And Oxidation

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

Perovskite crystallization of sol-gel processed (Pb,La0.06,Gd0.02)(Zr0.65,Ti0.35)O3 thin films: Dielectric, ferroelectric and optical properties

2002 ◽  
Vol 17 (10) ◽  
pp. 2652-2659 ◽  
Author(s):  
Reji Thomas ◽  
Shoichi Mochizuki ◽  
Toshiyuki Mihara ◽  
Tadashi Ishida
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Elemental Distribution ◽  
Surface And Interface ◽  
Si Substrates ◽  
Dielectric Constant And Loss ◽  
Direct Band ◽  
Free Films

Ferroelectric lead lanthanum gadolinium zirconium titanate (PLGZT) thin films were prepared by the sol-gel spin coating technique. Three-step preannealing heat treatment was employed to prepare crack-free films. Various types of substrates, and the effects of the seed layer and annealing temperature on the perovskite crystallization were studied. Phase-pure perovskite crystallization was obtained by annealing the films on PbTiO3/Pt/Ti/Si substrates at 700 °C for 30 min. The Auger electron spectroscopy depth profile showed uniform elemental distribution along the thickness except the surface and interface regions. Dielectric constant and loss tangent at 10 kHz were 1000 and 0.06, respectively. Remanent polarization (Pr) and coercive field (Ec) were 11.8 μC/cm2 and 71 kV/cm, respectively. The direct band gap energy was 3.55 eV for the amorphous films. The refractive index and extinction coefficient at 610 nm for amorphous PLGZT films were 2.14 and 0.0028, respectively. The dispersion of the refractive index was interpreted in terms of a single electronic oscillator at 6.06 eV.

Ellipsometric Imaging of Drying Sol-Gel Films

1988 ◽  
Vol 121 ◽  
Author(s):  
Alan J. Hurd ◽  
C. Jeffrey Brinker
Keyword(s):  
Refractive Index ◽  
Sol Gel ◽  
Dip Coating ◽  
Drying Process ◽  
Imaging Ellipsometry ◽  
Withdrawal Velocity ◽  
Coated Film ◽  
Sol Gel Films ◽  
Physical And Chemical ◽  
Dip Coated Films

ABSTRACTAlthough controlled dip-coating is an established way to apply high quality uniform coatings, the details of the coating and drying process have not been deeply studied. Depending on the physical and chemical state of the sol and the parameters of dipping (dipping angle and speed), a variety of thicknesses and porosities can be achieved [1]. For optical coatings, the refractive index and optical thickness can thereby be controlled.We have developed a method to view the drying front of a dip-coated film using broad beam ellipsometry [2], or “ellipsometric imaging.” In dip-coated films we take full advantage of the fact that a steady state is quickly reached where the drying line velocity matches the withdrawal velocity; however, the technique might also be used in unsteady situations such as spin coating. Imaging ellipsometry makes it possible to measure the refractive index and thickness profiles of both wet and dry films point-by-point in an entire image at once. These profiles provide important clues as to the relative importance of gravity, evaporation and other phenomena.

The Influencing Factors for the Thickness of Silica Sol-Gel Film by the Dip Coating Process

2014 ◽  
Vol 597 ◽  
pp. 165-169
Author(s):  
Jie Hong Lei ◽  
Ri Dong Zhang
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Sol Gel ◽  
Dip Coating ◽  
Silica Sol ◽  
Coating Process ◽  
Power Functions ◽  
Withdrawal Speed ◽  
Gel Film

The porous sol-gel silica thin films were prepared on silicon substrate by the dip coating process. The surface roughness and microstructure of the film was measured by optical microscopy and AFM .Coating thickness and refractive index were measured by ellipsometry method. Influence of withdrawal speed and concentration of colloid was investigated for the thickness of silica. The relation of the thickness and withdrawal speed was fitted by the linear and power functions, and the results were analyzed and compared. It was found that the films with the same thickness prepared by different concentrations of colloid have different refractive indexes. The experimental results indicated that the thickness and refractive index of the film can be controlled by changing the withdrawal speed and colloid concentration.

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