Pulsed electrodeposition of diamond-like carbon films

1997 ◽  
Vol 12 (11) ◽  
pp. 3102-3105 ◽  
Author(s):  
Hao Wang ◽  
Ming-Rong Shen ◽  
Zhao-Yuan Ning ◽  
Chao Ye ◽  
He-Sun Zhu

Diamond-like carbon (DLC) films have been prepared by electrolysis of methanol solution using a pulse-modulated source. The deposition rate of the films is enhanced significantly compared to that of dc value. That the films do not contain bonded hydrogen is confirmed by infrared spectra. The structures of the films are characterized by Raman spectroscopy. These films show chemical inertness and hardness values in the range 12.5–19 GPa. Current-voltage characteristics of the films are measured, indicating that the resistivity is in the 107 Ω cm range and the breakdown field is larger than 1 MV cm−1.

2010 ◽  
Vol 256 (21) ◽  
pp. 6403-6407 ◽  
Author(s):  
Hua Pang ◽  
Xingquan Wang ◽  
Guling Zhang ◽  
Huan Chen ◽  
Guohua Lv ◽  
...  

2000 ◽  
Vol 6 (S2) ◽  
pp. 432-433
Author(s):  
X. Chen ◽  
J. M. Gibson ◽  
J. Sullivan

Hydrogen-free amorphous diamond-like carbon films have stimulated great interest because of their useful properties, such as high hardness, chemical inertness, thermal stability, wide optical gap, and negative electron affinity[l]. Consequently, they may have various potential applications in mechanical and optical coatings, MEMS systems, chemical sensors and electronic devices. Amorphous diamond-like carbon films often contains significant amounts of four-fold or sp3 bonded carbon, in contrast to amorphous carbon films prepared by evaporation or sputtering which consist mostly of three-fold or sp2 bonded carbon. The ratio and the structure configurations of these three-fold and four-fold carbon atoms certainly decide the properties of these amorphous diamond-carbon films. Although the ratio of three-fold and four-fold carbon has been studied with Raman spectroscopy and electron-loss-energy spectroscopy, very little has been understood regarding key questions such as how the three-fold and the four-fold carbon atoms are integrated in the film, and what structures those three-fold carbon atoms take.


2014 ◽  
Vol 941-944 ◽  
pp. 547-550
Author(s):  
Chao Fang ◽  
Liang Yan Chen

A analytic method for the calculation of the electrical characteristics of semiconducting ceramics is suggested. This paper put forward the concept of effective carrier concentration. Electrical characteristics under extra electric field have been calculated by the method of tilted energy band. The non-linear current-voltage characteristics with different grain sizes has been obtained. The results pointed out that the current-voltage characteristics divide into three regions: Linear region before breakdown field, nonlinear region near breakdown field and upturn region after breakdown field; The grain boundary barrier leads to the strong non-linear characteristics, which has nothing to do with the grain size. With the grain size decreasing, the breakdown field increases. The results are compared with experimental data.


2004 ◽  
Vol 13 (9) ◽  
pp. 1592-1602 ◽  
Author(s):  
B Druz ◽  
I Zaritskiy ◽  
Y Yevtukhov ◽  
A Konchits ◽  
M Valakh ◽  
...  

1997 ◽  
Vol 498 ◽  
Author(s):  
P. Reinke ◽  
T. Wrase ◽  
K. Müller ◽  
P. Oelhafen ◽  
R. Locher

ABSTRACTThe modification of the diamond surface through adsorbants offers the opportunity to adjust the electronic and electron emission properties of the surface. In the study presented here, we deposited between 0.1 and 100 monolayers of carbon from an electron beam evaporation source on polycrystalline diamond films. Photoelectron spectroscopy in the ultraviolet and X-ray regime was employed to characterize the surface. Observations on a (100) polycrystalline diamond film show, that the surface is first depleted of hydrogen and subsequent growth of an amorphous carbon film (a-C) occurs on the reconstructed surface. The deposition of these ultrathin carbon films allows the controlled introduction of sp2carbon and p-π states onto the diamond surface. The field emission current increases considerably with the amount of sp2-carbon accumulated at the diamond surface. The current-voltage characteristics only partially follow the Fowler-Nordheim equation, and the results obtained for different films are described and possible emission mechanism discussed.


2012 ◽  
Vol 182-183 ◽  
pp. 232-236 ◽  
Author(s):  
Jin Feng Cui ◽  
Li Qiang ◽  
Bin Zhang ◽  
Xiao Ling ◽  
Jun Yan Zhang

Ti containing hydrogenated diamond like carbon films (Ti-DLC) was deposited on Si substrates at room temperature by magnetron sputtering Ti-twin target in methane and argon mixture atmosphere via changing the substrate bias voltage. The Ti atomic concentration in the film is less than 0.57% and exists mainly in the form of metallic titanium rather than TiC, confirmed by XPS analysis. The internal compressive stress of the film decreases monotonically with the substrate bias voltage increase. However, the hardness values of the film keep at level (12 GPa) without almost any obvious change with the increase of the substrate bias voltage. Furthermore, Ti-containing DLC film prepared at -1600 V substrate bias voltage shows an extremely low wear rate (~10-9mm3/Nm) and low friction coefficient (0.09).


2016 ◽  
Vol 852 ◽  
pp. 1029-1033 ◽  
Author(s):  
Ning Wang ◽  
Jing Wang ◽  
Fu Wei Zheng ◽  
Yu Min Wu ◽  
Bao Rong Hou

This paper compares the microstructure and electrochemical properties of the diamond-like carbon films obtained by two different deposition methods - microwave electron cyclotron resonance plasma enhanced chemical vapor deposition (MWECR-PECVD) techniques and electro-deposition – chosen for their low cost and capacity to produce films. The microstructure of the DLC films are investigated by Raman spectroscopy, FTIR spectroscopy, and electrochemical behavior is investigated by potentiodynamic and electrochemical impedance spectroscopy (EIS). Raman spectroscopy indicates that all the films deposited by different techniques show amorphous structure and typical characteristic of DLC film. FTIR spectrum results indicate that these DLC films are a-C:H films. As a result of EIS, the DLC films made by different methods showed obviously different electrochemical characters. The obtained results show that the DLC films deposited using the PECVD methods provided the better results, presenting a high corrosion resistance , high adherence to substrate, and a denser and more uniform surface.


2000 ◽  
Vol 87 (10) ◽  
pp. 7283-7289 ◽  
Author(s):  
K. W. R. Gilkes ◽  
S. Prawer ◽  
K. W. Nugent ◽  
J. Robertson ◽  
H. S. Sands ◽  
...  

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