Novel in situ production of smooth diamond films

1998 ◽  
Vol 13 (7) ◽  
pp. 1735-1737 ◽  
Author(s):  
Donald R. Gilbert ◽  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Ion Beam ◽  
Diamond Films ◽  
Extraction Process ◽  
Pure Oxygen ◽  
Average Roughness ◽  
Process System ◽  
Unique Method

We have developed a unique method to produce smooth diamond films using a modified microwave plasma process system. This method consists of sequential in situ deposition and planarization in an electron cyclotron resonance plasma system. Diamond films were deposited to a thickness of 3.0 μm in this system at a pressure of 1.000 Torr from gas mixtures of methanol and hydrogen. Deposition was followed by planarization using a two-grid ion beam extraction process with a pure oxygen plasma at 10 mTorr. The average roughness of the diamond films so produced was as low as 30 nm, which was a factor of two lower than that of the as-deposited diamond films.

Improvement in the Sensitivity of the Response of Diamond Thin Films to X-Ray

2007 ◽  
Vol 336-338 ◽  
pp. 1718-1721 ◽  
Author(s):  
Xiao Ming Liao ◽  
Jun Guo Ran ◽  
Li Gou ◽  
Jin Zhang ◽  
Bao Hui Su ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Post Treatment ◽  
X Ray ◽  
Microwave Plasma Cvd ◽  
Higher Sensitivity

Due to some inferior performance of Chemical Vapor Deposition (CVD) diamond dosimeters, their applications are somewhat limited. The quality of diamond films was improved using Microwave Plasma CVD (MWPCVD) by the modified processes such as cyclic deposition and in-situ plasma post-treatment. The simple radiation dosimeters were fabricated in a sandwich configuration. Influence of purity and orientation of the diamond films on the sensitivity of the dosimeters was studied. The results indicate that the radiation dosimeters have high sensitivity to X-ray and the response of the devices is linear with the X-ray flux. The higher the purity of films is, the higher the resistivity and sensitivity are. The dosimeter based on [100] film has higher sensitivity than that based on [111] film. The dosimeter based on films prepared by cyclic deposition has higher sensitivity than that based on films prepared by the conventional deposition. The characterization of the response to X-ray also shows that in-situ oxygen plasma post-treatment leads to the higher sensitivity of dosimeters compared with in-situ nitrogen, hydrogen plasma post-treatments.

GROWTH, CHARACTERIZATION, AND PROPERTIES OF CARBON NITRIDE WITH AND WITHOUT SILICON ADDITION

2000 ◽  
Vol 14 (02n03) ◽  
pp. 333-348 ◽  
Author(s):  
L. C. CHEN ◽  
C. T. WU ◽  
J.-J. WU ◽  
K. H. CHEN
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Wide Range

Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.

Polycrystalline Diamond Film Resistors

1992 ◽  
Vol 242 ◽  
Author(s):  
L. M. Edwards ◽  
J. L. Davidson
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
P Type ◽  
Polycrystalline Diamond Film ◽  
Effective Source

ABSTRACTThe technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.

XPS Study of In Situ One-Step Amination of Nanocrystalline Diamond Films

2010 ◽  
Vol 71 ◽  
pp. 45-49 ◽  
Author(s):  
S. Torrengo ◽  
Antonio Miotello ◽  
G. Speranza ◽  
L. Minati ◽  
I. Bernagozzi ◽  
...  
Keyword(s):  
Diamond Films ◽  
Pure Oxygen ◽  
Diamond Surface ◽  
Xps Analysis ◽  
Ammonia Gas ◽  
Diamond Surfaces ◽  
Nano Crystalline ◽  
One Step ◽  
Xps Study

In the present work two different in situ amination of hydrogenated nano-crystalline diamond surfaces were studied. The effects of an UV irradiation in pure ammonia gas were compared to those produced in a mixture of pure ammonia gas with a small amount of pure oxygen. In situ XPS analysis was used to study the evolution of surface terminations from “C-H” to “CNH2”. As we will show in this work, the grafting of NH2 functional groups to the diamond surface is mediated by oxygen indicating that oxygen plays a crucial role in the process of amination.

In Situ Fhir Spectroscopic Detection of Adsorbed Species on Sapphire Substrates in a Diamond ECR-Pacvd System

1997 ◽  
Vol 502 ◽  
Author(s):  
F. Shahedipour ◽  
S. Zhu ◽  
H. W. White
Keyword(s):  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Diamond Deposition ◽  
Diamond Nucleation ◽  
Sapphire Substrates ◽  
Film Synthesis ◽  
Deposition Conditions

ABSTRACTIn situ Fourier Transform Infrared Reflection Absorption Spectroscopy (FTIRRAS) has been used to study the adsorbed plasma species on sapphire substrate throughout the nucleation and deposition stages under diamond deposition conditions. The focus of this work has been on one of the most fundamental questions in the area of diamond film synthesis that concerns the gas species (precursors) responsible for diamond nucleation and growth especially on foreign substrates. It is experimentally shown here that the most probable precursor for diamond nucleation in methane-hydrogen plasma are methyl radicals.Diamond deposition on randomly oriented sapphire substrates has been successfully achieved under low pressure- low temperature deposition conditions using an electron cyclotron resonance microwave plasma assisted chemical vapor deposition (ECR-PACVD) system. The deposited thin films were characterized by Raman spectroscopy, and scanning electron microscopy.

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